3050 transistor
Abstract: transistor 3050 KSA1013 MC 150 transistor
Text: KSA1013 PNP EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT COLOR TV VERTICAL DEFLECFION OUTPUT ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
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KSA1013
-55M50
-150V,
-10mA,
-200mA
24ki71
0024L
3050 transistor
transistor 3050
KSA1013
MC 150 transistor
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fe 160
Abstract: No abstract text available
Text: KSC2383 NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT COLOR TV VERTICAL DEFLECTION OUTPUT ABSOLUTE MAXIMUM RATINGS TA-25t: C haracteristic Sym bol Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current Base Current
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KSC2383
200mA
fe 160
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pnp hfe 120-240
Abstract: transistor 200ma pnp KSA1013
Text: KSA1013 PNP EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT COLOR TV VERTICAL DEFLECTION OUTPUT TO-92L ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
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KSA1013
O-92L
-150V,
-10mA,
-200mA
-500mA,
-50mA
pnp hfe 120-240
transistor 200ma pnp
KSA1013
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500mW 5v transistor
Abstract: No abstract text available
Text: DESCRIPTION CRO 2N5448 R PNP SILICON TRANSISTOR 2N5448(R) is PNP silicon planar transistor for general purpose medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
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2N5448
200mA
500mW
100jxA
300jiS,
4351Q
500mW 5v transistor
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2N3962
Abstract: No abstract text available
Text: 2N3962 CRO PNP SILICON TRANSISTOR TO-18 DESCRIPTION 2N3962 is PNP silicon planar transistor designed for AF small signal amplifier stages. CBE ABSOLUTE MAXIM UM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
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2N3962
2N3962
200mA
360mW
300/xS,
Sep-96
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Untitled
Abstract: No abstract text available
Text: CRO 2N3962 PNP SILICON TRANSISTOR TO-18 DESCRIPTION 2N3962 is PNP silicon planar transistor designed for AF small signal amplifier stages. CBE ABSOLUTE MAXIM UM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
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2N3962
2N3962
10/xA
200mA
360mW
300/xS,
Sep-96
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TRANSISTOR 2341
Abstract: T0-92A MPS8097
Text: IVI SILICON TRANSISTOR T0-92A DESCRIPTION MPS8097 is NPN silicon planar epitaxial transistor designed fo r general purpose applications. ? •»» EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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MPS8097
T0-92A
200mA
350mW
100pA
Oct-96
100mA
100MHz
Width300
TRANSISTOR 2341
T0-92A
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KTA1274
Abstract: KTC3227 KTA1274 Y
Text: SEMICONDUCTOR TECHNICAL DATA KTA1274 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURE • Complementary to KTC3227. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current
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KTA1274
KTC3227.
T0-92L
-50mA
--200mA
--200mA,
-20mA
-10mA
KTA1274
KTC3227
KTA1274 Y
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hh 004 f
Abstract: A1274 Al274 transistor hh 004 a1274 transistor KTC3227 ph-13 transistor
Text: SEMICONDUCTOR TECHNICAL DATA KTC3227 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURE • Complementary to KTA1274. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current
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KTC3227
Al274.
hh 004 f
A1274
Al274
transistor hh 004
a1274 transistor
KTC3227
ph-13 transistor
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BC847B-1F
Abstract: BC847A BC847B BC847C SC-89
Text: BC847AT/BT/CT COLLECTOR 3 General Purpose Transistor NPN Silicon 33 1 1 BASE 2 SC-89 SOT-523F 2 EMITTER M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
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BC847AT/BT/CT
SC-89
OT-523F)
BC847A
BC847B
BC847C
SC-89
50BSC
BC847B-1F
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powertech
Abstract: 200v 5a transistor
Text: "BIG IDEAS IN BIG POWER” • PowerTech 70 AMPERES PT-7509 SILICON NPN TRANSISTOR MAXIMUM RATINGS PT-7509 SYMBOL Collector-Base Voltage 200V V CBO Collector-Emitter Voltage 200V V CEO Emitter-Base Voltage 10V V EBO Peak Collector Current 'cm * 70A D.C. Collector Current
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PT-7509
PT-7509
200mA,
100KHz
FT-7509
powertech
200v 5a transistor
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CXT3090L
Abstract: No abstract text available
Text: CXT3090L SURFACE MOUNT LOW VCE SAT NPN POWER TRANSISTOR POWER TM 89 SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Power Dissipation Operating and Storage Junction Temperature
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CXT3090L
OT-89
100mA,
500mA
200mA
23-September
CXT3090L
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Untitled
Abstract: No abstract text available
Text: KSC2383 NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT COLOR TV VERTICAL DEFLECFION OUTPUT ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage VcBO V ceo Emitter-Base Voltage Collector Current
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KSC2383
DG2H773
QD2477U
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Untitled
Abstract: No abstract text available
Text: TO-92B 2SC2603 is NPN silicen planar transistor purpose designed for low powei • general amplifiers. ABSOLUTE MAXIMUM RATINGS ECB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction & Storage Temperature
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2SC2603
O-92B
200mA
300mK
VCB-50V
100mA
-10mA1
1C--10mA
300us,
ox69477,
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PZT951
Abstract: No abstract text available
Text: PZT159 PNP Silicon Planar High Current Transistor COLLECTOR 2, 4 P b Lead Pb -Free SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit Collector to Base Voltage VCBO -100 V
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PZT159
OT-223
13-Jan-06
PZT951
OT-223
PZT951
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2sa1013
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1013 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -1A Collector-base voltage
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O-92MOD
2SA1013
O-92MOD
-200mA
-50mA
30MHz
2sa1013
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Untitled
Abstract: No abstract text available
Text: PZT159 PNP Silicon Planar High Current Transistor COLLECTOR 2, 4 P b Lead Pb -Free SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit Collector to Base Voltage VCBO -100 V
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PZT159
OT-223
11-Jul-07
OT-223
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2SC1627A
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1627A TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.8 W (Tamb=25℃) 3. BASE Collector current ICM: 0.4 A Collector-base voltage
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O-92MOD
2SC1627A
O-92MOD
200mA
2SC1627A
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTA1274 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 1 3. BASE W (Tamb=25℃) Collector current -400 mA ICM: Collector-base voltage
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O-92L
KTA1274
O-92L
-50mA
-200mA
-200mA,
-20mA
-10mA
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FZT951
Abstract: No abstract text available
Text: FZT951 PNP Silicon Planar High Current Transistor COLLECTOR 2, 4 P b Lead Pb -Free SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit Collector to Base Voltage VCBO -100 V
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FZT951
OT-223
21-Jul-05
OT-223
FZT951
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTC3227 TO-92L TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 1 3. BASE W (Tamb=25℃) Collector current 400 mA ICM: Collector-base voltage
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O-92L
KTC3227
O-92L
200mA
200mA,
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ZUMT5088
Abstract: ZUMT5179
Text: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ZUMT5088 ISSUE 1 - DECEMBER 1998 PARTMARKING DETAIL - T20 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 4.5 V Continuous Collector Current
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OT323
ZUMT5088
ZUMT5179
100MHz
ZUMT5088
ZUMT5179
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors BD034 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2.5 A Collector-base voltage
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O-92MOD
BD034
O-92MOD
-10mA,
-100V,
-100mA
-200mA
-500mA
-250mA,
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2383 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: 1 A Collector-base voltage
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O-92MOD
2SC2383
O-92MOD
200mA
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