TRANSISTOR B47 Search Results

Contextual Info: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

BUK436-800A

Abstract: BUK436-800B
Contextual Info: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

diode RP 6040

Abstract: 1N111 BUK436-800A BUK436-800B bsh 13 - n1 RFT Semiconductors
Contextual Info: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

bsh 13 - n1

Abstract: BUK436-800A BUK436-800B
Contextual Info: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: bbSBIBl DQ25T47 b47 « A P X N AHER PHILIPS/DISCRETE b7E J> PNP switching transistor Philips Semiconductors FEATURES Product specification PMST4403 PIN CONFIGURATION • S-mini package • High collector current. DESCRIPTION PNP silicon planar epitaxial transistor in a plastic SOT323

Contextual Info: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features

4312 020 36642

Abstract: transistor tt 2222 philips Fxc 3 b TRANSISTOR BO 346 ic LM 356 mml 600 BLV38
Contextual Info: N AMER PHILIPS/DISCRETE b'ìE J> • IAPX bbS3T31 OGi^GaE b47 BLV38 A VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VHF television transmitters vision or sound amplifiers . Features

philips ID 35

Abstract: BUK436-800A
Contextual Info: PHILIPS I N T E R N A T I O N A L bSE D B 711DfiSh 0 0 b 3 ^ D b b47 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

DSAFRZWS

Contextual Info: PHILIPS I N T E R N A T I O N A L bSE D B 711DfiSh 0 0 b 3 ^ D b b47 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AUER PHILIPS/DISCRETE bSE D • bbSB'lBl QQSflSb3 ^36 « A P X Philips Sem iconductors Product specification Silicon diffused power transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in

Contextual Info: Transistors • 762ñ€lcn DülbBfi? b47 ■ General Purpose Transistor 50V, 0.15A 2SC2412K/2SC4081/2SC4617/2SC1740S •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Low Cob. Cob = 2.0pF (Typ.) 2SC2412K 2SC4081 2) Complements the 2SA1037AK/ 2SA1576A/2SA1774/2SA933AS.

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT597 ISSUE 3 - OCTOBER 1995_ COMPLEMENTARY TYPE FMMT497 PARTMARKING DETAIL - 597 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage C ollector-E m itter Voltage VALUE UNIT VCBO

Contextual Info: KSC388 NPN EPITAXIAL SILICON TRANSISTOR TV FINAL PICTURE IF AMPLIFIER APPLICATIONS • G Pe=33dB Typ (f=45MHz) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Sym bol Collector-Base Voltage Collector-Emitter Vsltage Emitter-Base Voltage Collector Current

Contextual Info: PD- 9.1470E International I R Rectifier IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: Ordering num ber: EN3971 2SD1908 No.3971 NPN Epitaxial Planar Silicon Transistor CRT Display Horizontal Deflection Output Applications Features • Fast switching speed. • Especially suited for use in high-definition CRT display : Vcc = 6 to 12V. •Wide ASO and highly resistant to breakdown.

PR4 schematic diagram

Abstract: SCJR
Contextual Info: SGS-THOMSON iBJOTMBDe STV60N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R d S o ii Id STV60N05 50 V < 0.02 Û 60 A . . . . . . . . . TYPICAL RDS(on) = 0.017 £1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 10OPC

IFN5912

Abstract: IFN5911 NJ-30
Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation

2n5485 equivalent transistor

Abstract: transconductance 2N5485 2N4416 equivalent 2N5485 interfet 2N4416 2N4416A 2N5484 2N5486 SMP4416
Contextual Info: Databook.fxp 1/14/99 11:30 AM Page B-14 B-14 01/99 2N4416, 2N4416A N-Channel Silicon Junction Field-Effect Transistor ¥ Mixers ¥ VHF Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Dissipation

CD860

Abstract: IFN860 NJ3600L IF3602 IFN5911 IFN5912
Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation

2N6449

Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

Contextual Info: H EW LETT PACKARD 0PT 0C 0U P L E R S m Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current Iq 2 2 . 0 A Peak, 0 . 6 A Continuous I01 (1.0 A Peak, 0.5 A Continuous) • 1.5 kV/jis Minimum Common

B304 transistor

Abstract: photo transistor
Contextual Info: dual component sensors OED-SR-105F Package Sty!» W SMT Bent Leads 5.0 Limits of Sale Operation Pd If mA (mW) 75 t4 » <C°) 50 -20 ~ + 85 Type Vf @ 20mA Input Po(«nW) M nA) IL (¿A) Output lc£0 (J.A) 1.3 3.5 1.3 90 0.2 Photo Transistor OED-SIV2167 Vr

Contextual Info: Panasonic Others DN8650 7-circuit Darlington Driver Array • Overview The DN8650, which is an NPN Darlington type buffer with PNP transistor for input, is a 7-circuit non-inverting type driver array. ■ Features • 7-circuit buffer • • • • Low output breakdown voltage : V ce sus = 3 5 V (min)

30BF

Abstract: TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF
Contextual Info: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL Sb E D I 7110ä2b 00M34bb 700 « P H I N SILICON EPITAXIAL POWER TRANSISTORS T - & - IT PNP silicon power transistor in a S O T 186 envelope w ith an electrically insulated mounting base, for use in audio output stages and for general purpose am plifier and high-speed switching applications.