TRANSISTOR B29 Search Results

Contextual Info: TRANSISTOR MODULE QCA100AA100 UL;E76102 M Q C A 1O O A A 10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

1MB12-140

Abstract: BH RV transistor rs9 ccd 10W5-T B-30
Contextual Info: 1 M B 1 2 - 1 4 ^ ± IG B T IGBT INSULATED GATE BIPOLAR TRANSISTOR : Features • High Speed Switching • Low Saturation Voltage • High Impedance Gate Small Package : Applications • Voltage Resonance Power Supply Induction Heater • Maximum Ratings and Characteristics

IF3601

Abstract: 2N6449 2N6450 IF9030 interfet B-28 IF140 IF140A IF142 IF1320
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current

rp110n261

Abstract: RP110L161D RP110N151B RP110N081B RP110N141C RP110N171D RP110L121C5
Contextual Info: RP110x SERIES 150mA Low Supply Current LDO REGULATOR NO.EA-239-131023 OUTLINE The RP110x Series is a voltage regulator LDO IC, which has been developed using the CMOS process technology, with high output voltage accuracy, ultra-low supply current, and low ON-resistance transistor. The IC

IF142

Abstract: Transistor B29
Contextual Info: Databook.fxp 1/14/99 1:50 PM Page B-29 B-29 01/99 IF142 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

a2724

Abstract: Transistor A23 CFB0230A 2S302 A23 transistor TRANSISTOR a31 32 bit carry select adder
Contextual Info: CFB0230A CFB0230A CFB023ÛA 32-bit Carry Select Adder description: CFB0230A uses a fast carry-select algorithm to perforin an addition of two 32-bit numbers. LOGIC SYMBOL : CI A31 :0 B31:0 CFB0230A CO + I S31:0 TïflE-f32 INPUTS LOADING IN TRANSISTOR PAIRS) :

alu 74181

Abstract: 25B22 f422 S2 f19
Contextual Info: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),

2N6449

Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

agh 003

Abstract: M210 TM25
Contextual Info: 2DI150Z-1000 50A '< * 7 - POWER TRANSISTOR MODULE : Features • ffili/E • 7 U— High Voltage ') ' s ' ? ¥ < • ASO t — Kl*9/8i • Insulated Type • f f l i i l : A p p lic a tio n s • High Power • Including Free Wheeling Diode Excellent Safe Operating Area

LG tv

Contextual Info: 2 D 1 I 5 O Z - 1 O O i 5 0 A D.— Jl" , ± / ' ï r7 — l i W ' + ï i : Outline Drawings POWER TRANSISTOR MODULE : Features • SWEE High Voltage • 7 'J — j f î 'f '} > * ? -f + — K r tiK • ASO Including Free W heeling Diode Excellent Safe Operating Area

ETK85-050

Abstract: 10T2 B-28 B-30 B-31 M102 T151 Transistor B29
Contextual Info: ETK85-050 75a '± '< 7 — • JU POWER TRANSISTOR MODULE : Features • 7 U— V .> 7 f f *( # —' F fiM t • h F E ^ f ljl' • Including F re e w h e e lin g Diode High D C Current Gain Insulated Type • ff iiÉ I A pplications • "j + 's V Power Sw itching

ETK85-050

Contextual Info: ETK85-050 75a '± '< 7 — • JU POWER TRANSISTOR MODULE : Features • 7 U— V .> 7 f f *( # —' F fiM t • h F E ^ f ljl' • Including F re e w h e e lin g Diode High D C Current Gain Insulated Type • ffiiÉ I Applications • "j + 's V Power Sw itching

M206

Abstract: T930 freewheeling diode 4.5A
Contextual Info: 1DI5OF-12O 50a • £ ± , < r j - = £ ï ! ’= L - ) \ , POWER TRANSISTOR MODULE : Features • fiiliJ ï H igh V olta ge 97V — V > ? Ÿ ^ 'X —VfàWL • A S O /^ jE i' In c lu d in g Free W h e e lin g D io d e E xcellent Safe O p e ra tin g Area

ETK85-050

Abstract: t460 transistor B-28 B-30 B-31 M102 T151 T760 3050-FT smme
Contextual Info: ETK85-050 75a POWER TRANSISTOR MODULE H t J t : Features >7 'J—f r ' f V > V # <f t — K F*3JÜ » h F E ^ flji' Including Freew heeling Diode High DC Current Gain Insulated Type IffliÈ *. A p p l i c a t i o n s Power Switching •AC * = - 9 1 tm A C M otor Controls

diode b31 930 B

Abstract: ETK85-050 3W P9LRS1.EM-PPPS-30S3
Contextual Info: ETK85-050 75 a / < 7 ; u POWER TRANSISTOR MODULE : F e a tu re s • 7 U— ' Kr t K • hF E ^S o • l&t&M In c lu d in g F ree W h e e lin g D io d e H ig h D C C u rre n t G ain In s u la te d T y p e : A pplications P o w e r S w itc h in g ^ -9 lS m

B2941T

Abstract: B2940N B2940S B2940T B2941N
Contextual Info: Bay Linear Inspire the Linear Power 1.25A High Current Low Dropout B2940/2941 Voltage Regulator Adjustable Preliminary Information Description Features • • • • • • • • • The Bay Linear B2940 & B2941 is a 1.25A high accuracy, low dropout voltage regulator with only 40mV at light loads and

LPD-D

Abstract: computer smps circuit diagram Bay Linear B29150 B29150J B29150S B29150T MIC29150 power transistor
Contextual Info: Bay Linear Inspire the Linear Power 1.5A High Current Low Dropout B29150 Voltage Regulator Adjustable & Fix Output Preliminary Information Description Features • • • • • • • • The Bay Linear B29150 is a 1.5A high accuracy, low dropout voltage regulator with only 350mV Typ. @ 1.5A). The B29150 is

melf diode marking

Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Contextual Info: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish

k3hb-vlc

Abstract: K3HB-V K34-C1 K3HB-XVD k3hb-x manual flk3b K3HB-S B-26 k34-c2 5-10VDC
Contextual Info: Panel Meters with Advanced Signal Processing Capabilities K3HB K3HB-X/Process Indicator K3HB-V/Weighing Indicator K3HB-H/Temperature Indicator K3HB-S/Linear Sensor Indicator Features Red-Green Display Allows Easy Recognition of Judgement Results High-speed Sampling at 50 Times per

C7181

Abstract: S7170-0909N
Contextual Info: CCD area image sensors S7170-0909 S7171-0909-01 512 x 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP multi-pinned phase mode back-thinned FFT-CCDs S7170-0909, S7171-0909-01 specifically designed for low-light-level detection in scientific applications. The S7170-0909, S7171-0909-01 have sensitivity from the UV to

ccd 512 x 512

Contextual Info: CCD area image sensors S7170-0909 S7171-0909-01 512 x 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP multi-pinned phase mode back-thinned FFT-CCDs S7170-0909, S7171-0909-01 speci¿cally designed for low-light-level detection in scienti¿c applications. The S7170-0909, S7171-0909-01 have sensitivity from the

Contextual Info: IMAGE SENSOR CCD area image sensor S9972/S9973 series Front-illuminated FFT-CCD, high near IR sensitivity The S9972/S9973 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the device

Contextual Info: CCD area image sensors S7170-0909 S7171-0909-01 512 x 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP multi-pinned phase mode back-thinned FFT-CCDs S7170-0909, S7171-0909-01 specifically designed for low-light-level detection in scientific applications. The S7170-0909, S7171-0909-01 have sensitivity from the

S11850-1106

Abstract: S11851-1106 TD-40 H2048
Contextual Info: CCD image sensors S11850-1106 S11851-1106 Improved etaloning characteristics, Constant element temperature control The S11850/11851-1106 are back-thinned CCD image sensors designed for spectrometers. Two types consisting of a low noise type S11850-1106 and high-speed type (S11851-1106) are available with improved etaloning characteristics. The S11850/11851-1106 offer nearly flat spectral response characteristics with high quantum efficiency from the