SMD TRANSISTOR MARKING w7
Abstract: No abstract text available
Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9115T
O-236AB)
PBHV8115T.
AEC-Q101
PBHV9115T
771-PBHV9115T215
SMD TRANSISTOR MARKING w7
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PDF
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sot023
Abstract: No abstract text available
Text: PESD5V0S2BT Low capacitance bidirectional double ESD protection diode Rev. 03 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional double ElectroStatic Discharge ESD protection diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to
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O-236AB)
771-PESD5V0S2BT-T/R
sot023
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PDF
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pesd1can4
Abstract: BV SMD SOT-023 PESD1CAN.215 PESD1CAN
Text: PESD1CAN CAN bus ESD protection diode Rev. 04 — 15 February 2008 Product data sheet 1. Product profile 1.1 General description PESD1CAN in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines
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O-236AB)
771-PESD1CAN-T/R
pesd1can4
BV SMD
SOT-023
PESD1CAN.215
PESD1CAN
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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2N7002CK
O-236AB)
2N7002CK
771-2N7002CK215
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PDF
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88347
Abstract: GSOT03C GSOT03 GSOT04 GSOT04C GSOT05 GSOT05C GSOT08 GSOT36C
Text: GSOT03 thru GSOT36C Vishay Semiconductors New Product formerly General Semiconductor Miniature Transient Voltage Suppressors Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View 3 .056 (1.43) .052 (1.33) 0.079 (2.0)
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Original
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GSOT03
GSOT36C
O-236AB
OT-23)
OT-23
MIL-STD-750,
20-Jun-02
88347
GSOT03C
GSOT04
GSOT04C
GSOT05
GSOT05C
GSOT08
GSOT36C
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PDF
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Untitled
Abstract: No abstract text available
Text: TP2105 Ü 3W Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / BVdgs -50V R d S ON P rod uct m arking fo r SOT-23: Order Number/Package ^G S (th ) (max) (max) TO-236AB* TO-92 Die 6Q -2.0 V TP2105K1 T P 21 05N 3 T P 21 05N D
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OCR Scan
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TP2105
O-236AB*
TP2105K1
OT-23:
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PDF
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N-Channel Depletion-Mode MOSFET high voltage
Abstract: SOT-23 MARKING mn DW-200 NDE SOT23 MARKING
Text: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Id s s Order Number / Package Product marking for SOT-23: b v dgx (max) (min) TO-236AB* NDE* 500V 1.0KÌÌ 1.0mA LND250K1 where * = 2-week alpha date code ’ Sam e as SOT-23. All units shipped on 3,000 piece carrier tape reels.
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OCR Scan
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LND250
O-236AB*
LND250K1
OT-23:
OT-23.
N-Channel Depletion-Mode MOSFET high voltage
SOT-23 MARKING mn
DW-200
NDE SOT23 MARKING
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PDF
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marking AGs sot-23
Abstract: marking AGs sot23 ags marking n1a marking n1a sot23 marking code VN2106
Text: VN2106 VN2110 S u p ertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S ON Product marking for SOT-23: (max) TO-92 TO-236AB* 60V 4.0Q VN2106N3 - VN2106ND 100V 4.0C1 — VN2110K1 VN2110ND BV dqs
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OCR Scan
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VN2106
VN2110
OT-23:
VN2106N3
O-236AB*
VN2106ND
VN2110ND
VN2110K1
OT-23.
VN2106/VN2110
marking AGs sot-23
marking AGs sot23
ags marking
n1a marking
n1a sot23 marking code
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PDF
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Untitled
Abstract: No abstract text available
Text: LP0801 h m . _ Low ThreshoJ P relim ina ry P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV DGS -16.5V D max (min) V GS(th) (max) 12.0Q -20 0m A -1.0V DS(ON) ^D(ON) Order Number / Package TO-236AB*
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OCR Scan
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LP0801
O-236AB*
LP0801K1
0801N
-150m
-100m
-200m
300jxs
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PDF
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Untitled
Abstract: No abstract text available
Text: Struthers-Dunn 407 East Smith Street - Suite B Timmonsville, SC 29161 US Phone: 843 346-4427 • Fax: (843) 346-4465 E-Mail: info@struthers-dunn.com • Web site:www.struthers-dunn.com Item # 236ABXP-020-115-125VDC, 236TD /237 Series - Time Delay Relays
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236ABXP-020-115-125VDC,
236TD
500VDC
27390D
33377D
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marking Z2
Abstract: BZX84C5V1 BZX84C5V6
Text: 118 11 DÛ I MMm h m I ÀX \ SOT-23/TO-236AB 2 \/ M / ‘TM PZ’ ZENER D IO D E S ELECTRICAL CH ARACTERISTICS at A = 25 C Zener Voltage Leakage Current Zener Impedance Pinning Min. Nom. Max. @l ZT Max @VR Max. ZZT @ IZT Marking V (V) (V) (mA) (|JA) (V)
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OCR Scan
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OT-23/TO-236AB
TMPZ5230
TMPZ5231
TMPZ5232
TMPZ5234
TMPZ5236
TMPZ5237
TMPZ5239
TMPZ5240
TMPZ5242
marking Z2
BZX84C5V1
BZX84C5V6
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV31XN
O-236AB)
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV90EN
O-236AB)
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smd code marking LF sot23
Abstract: PESD36VS2UT
Text: PESD36VS2UT Low capacitance unidirectional double ESD protection diode Rev. 01 — 16 July 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge ESD protection diode in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to
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PESD36VS2UT
O-236AB)
AEC-Q101
PESD36VS2UT
smd code marking LF sot23
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PDF
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PMV40UN2
Abstract: No abstract text available
Text: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV40UN2
O-236AB)
PMV40UN2
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Untitled
Abstract: No abstract text available
Text: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV16UN
O-236AB)
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PDF
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 15 May 2014 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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O-236AB)
PDTD143ET
O-236AB
PDTB143ET
PDTD143XT
PDTB143XT
PDTD114ET
PDTB114ET
AEC-Q101
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PDF
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APD417
Abstract: GF2402
Text: GF2402 Vishay Semiconductor New Product N-Channel Enhancement-Mode MOSFET TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.035 (0.9) Pin Configuration 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175)
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GF2402
O-236AB
OT-23)
OT-23
26-Nov-01
APD417
GF2402
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PDF
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PT3904
Abstract: No abstract text available
Text: SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T . = 25°C V BR CBO V (BR)CEO V(BR)EBO Max. @ vCB Device Type M arking (V) (V) (V) VCE(sat) DC C urrent Gain ^CBO h FE t>FE @ lc @ VCE Max. @ lc (nA) (V) Min. Max. (mA) (V) (V) (mA) 't Min. @ lc (MHz) (mA) ts'
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OCR Scan
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OT-23/TO-236AB
PT2222A
PT3904
TMPT4401
PT5089
PT6427
PTA06
PTA42
050H33Ã
PT3904
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PDF
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1GM sot-23 transistor
Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 20FEB02
Text: MMBTA06 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95)
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MMBTA06
O-236AB
OT-23)
MMBTA56
100mA,
100mA
100MHz
20-Feb-02
1GM sot-23 transistor
vishay TRANSISTOR Sot-23 MARKING CODE
20FEB02
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PDF
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88142
Abstract: No abstract text available
Text: BAT54 thru BAT54S Vishay Semiconductor Schottky Diodes Features TO-236AB SOT-23 • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT54
BAT54S
O-236AB
OT-23)
OT-23
E8/10K
30K/box
30K/box
03-Jan-02
88142
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PDF
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BCW72
Abstract: No abstract text available
Text: BCW71 and BCW72 Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View ct u d ro P New .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 2 0.037 (0.95)
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BCW71
BCW72
O-236AB
OT-23)
BCW69
BCW70
BCW72
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PDF
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2n4401 052
Abstract: transistor 2n4401 equivalent TS36
Text: MMBT4401 Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.037 (0.95) 0.037 (0.95) .007 (0.175) .005 (0.125) 0.079 (2.0) 0.035 (0.9) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95)
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MMBT4401
O-236AB
OT-23)
OT-23
E8/10K
2n4401 052
transistor 2n4401 equivalent
TS36
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PDF
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Marking Code S72
Abstract: s72 sot 23 s72 mosfet 2N7002 S72 SOT-23
Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) G 0.037 (0.95) 0.037 (0.95) Pin Configuration .007 (0.175) .005 (0.125) max. .004 (0.1)
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Original
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2N7002
230mA
O-236AB
OT-23)
OT-23
E8/10K
30K/box
500mA
200mA
200mA,
Marking Code S72
s72 sot 23
s72 mosfet
2N7002 S72 SOT-23
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PDF
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