TRANSISTOR ARK 05 Search Results

Contextual Info: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS

J 420 G

Contextual Info: International IGR Rectifier pd-91654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: N MMBT6427 2N6427 c TO-92 BE SOT-23 B M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Rstinys

Contextual Info: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

IRG4PF50W

Contextual Info: PD - 91710 International l R Rectifier IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features • O ptim ized fo r use in W elding and S w itch -M ode P ow er S up ply applications • Industry benchm ark switching losses im prove efficiency o f all pow er supply topologies

D40 transistor

Abstract: transistor 5167 PZTA14 5Ci transistor
Contextual Info: MPSA14 I MMBTA14 / PZTA14 & D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r " PZTA14 MMBTA14 MPSA14 SOT-23 SOT-223 M ark: 1 N NPN Darlington Transistor T h is d e v ice is d e s ig n e d for a p p lica tio ns requiring extrem ely

WPTS-512

Abstract: npn photo transistor phototransistor 600 nm time phototransistor 580 1050nm
Contextual Info: Photo Transistor Waitrony Module No.: WPTS-512 1. General Description: The WPTS-512 is a high sensitivity NPN silicon phototransistor mounted in a 05mm flat head and water clear resin package. This phototransistor permits wide angular response. Dimensions

c 5802 transistor

Abstract: IAO5 Waitrony IE-2 WPTS-510D Rise time of photo transistor
Contextual Info: Photo Transistor Waitrony Module No.: WPTS-510D 1. General Description: The WPTS-510D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor

Contextual Info: MOTOROLA O rder this docum ent by M TSF3N03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TSF3N 03H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA O rder this docum ent by m t d f i n o 2h d /d SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD F1N 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor DUAL TMOS POWER MOSFET

ASEA motor

Contextual Info: MOTOROLA O rder this docum ent by M TSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA O rder this docum ent by M TSF3N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TSF3N 02H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs

transistor dk qq

Abstract: IRF540 motorola
Contextual Info: MOTOROLA O rder this docum ent by IRF540/D SEMICONDUCTOR TECHNICAL DATA Product Preview IR F540 TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy

Contextual Info: MOTOROLA O rder this docum ent by m t d f i p o 2 h d / d SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T D F 1P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA Order this document by MMDF4P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F4P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power

Contextual Info: MOTOROLA O rder this docum ent by M TSF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M T S F 1P 02H D Medium Power Surface Mount Products TM OS Single P-Channel Field E ffect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs

transistor H-R

Abstract: KST5088 KST5089 marking SAI
Contextual Info: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit - Collector-Base Voltage VcbO KST5088 KST5089 Collector-Emitter Voltage 35 30 . V ce O KST5088 KST5089 Emitter-Base Voltage

05n60

Abstract: G05N60D
Contextual Info: MOTOROLA O rder this docum ent by M M G 05N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMG05N60D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his IG BT con tain s a b u ilt-in free w h ee lin g diod e and a gate

f1n05 motorola

Contextual Info: MOTOROLA O rder this docum ent by M MDF1N05E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize M otorola’s TMOS process. These miniature surface

Contextual Info: REFLECTIVE SWITCH r - q i o 3 MARKTECH INTERNATIONAL 1ÖE D ST'HbSS ODQG4b4 0 MTRS9080, MTRS9080 LB INFRARED LED+ PHOTO TRANSISTOR APPLICATIONS FEATURES # SENSOR FOR AUDIO, VIDEO, FILM AND DISCS . PAPER POSITION SENSOR FOR ELECTRONIC PRINTERS & FACSIMILE.

SL901

Abstract: 75D01 SL5511 "GE Solid state"
Contextual Info: E SOLI» STATE □1 DE|3ñ7S0ñl 0D n 7 7 t 1 | Optoelectronic Specifications i - S 3 r w Photon Coupled Isolator SL5511 The G E Solid State SL5511 consists o f a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. T he GE

Contextual Info: vim ì N T E ELECTRONICS • i INC 17E • AMBISSI OOOntfl 1 ■ T-V/-S3 NTE TYPE HAS DESCRIPTION NO. NOi r! ■ 3039 rfz.:- Lite/D ark Sw itch HAX SUPPLY VOLTAGE V HAX OUTPUT . VOLTAGE ’ (V) HAX OUTPUT OUTPUT ON OUTPUT OFF Vcc v0UT •out Eon eoff Po*

TRANSISTOR BH RW

Abstract: BH RV transistor h0a1180 0a1180
Contextual Info: H 0A1180 Reflective Sensor FEATU RES • C h o ice of phototransistor or photodarlington output • High sensitivity • W ide operating tem perature range -55°C to +100°C • 12.0 in.(305 mm) min. 28 A W G P V C insulated wire leads D E S C R IP T IO N

1n5908

Abstract: 1n5907 transistor 5908
Contextual Info: ^ ^ ^ Tr a n s Z o r b • T R A N S IE N T VOLTAGE SU PPRES SO R S General Semiconductor • Industries, Inc. 1N5907 AND 1N5908 FEATURES APPLICATION • 5.0 volts Reverse Stand-Off voltage • Designed for T*L Logic protection • Each device 100% tested