Untitled
Abstract: No abstract text available
Text: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS
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2N6427
MMBT6427
2N6427
OT-23
PSA14
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J 420 G
Abstract: No abstract text available
Text: International IGR Rectifier pd-91654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies
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pd-9165
IRG4BC40W
--600V
J 420 G
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2N6427
Abstract: MMBT6427 MPSA14
Text: N MMBT6427 2N6427 c TO-92 BE SOT-23 B M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Rstinys
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2N6427
MMBT6427
OT-23
MPSA14
2N6427
MMBT6427
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Untitled
Abstract: No abstract text available
Text: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies
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MS5SM52
P0S1V22
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IRG4PF50W
Abstract: No abstract text available
Text: PD - 91710 International l R Rectifier IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features • O ptim ized fo r use in W elding and S w itch -M ode P ow er S up ply applications • Industry benchm ark switching losses im prove efficiency o f all pow er supply topologies
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IRG4PF50W
100kHz
IRG4PF50W
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mpsa14
Abstract: 43t SOT23 43t transistor
Text: MPSA14 I MMBTA14 / PZTA14 D iscrete P O W E R & S ig n a l Technologies 6* National Semiconductor PZTA14 MMBTA14 MPSA14 SOT-23 B SOT-223 M ark: 1 N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from
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MPSA14
MMBTA14
PZTA14
MPSA14
MMBTA14
OT-23
OT-223
43t SOT23
43t transistor
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D40 transistor
Abstract: transistor 5167 PZTA14 5Ci transistor
Text: MPSA14 I MMBTA14 / PZTA14 & D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r " PZTA14 MMBTA14 MPSA14 SOT-23 SOT-223 M ark: 1 N NPN Darlington Transistor T h is d e v ice is d e s ig n e d for a p p lica tio ns requiring extrem ely
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PZTA14
OT-223
00407bD
L5D1130
004G7bl
D40 transistor
transistor 5167
PZTA14
5Ci transistor
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WPTS-512
Abstract: npn photo transistor phototransistor 600 nm time phototransistor 580 1050nm
Text: Photo Transistor Waitrony Module No.: WPTS-512 1. General Description: The WPTS-512 is a high sensitivity NPN silicon phototransistor mounted in a 05mm flat head and water clear resin package. This phototransistor permits wide angular response. Dimensions
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WPTS-512
WPTS-512
npn photo transistor
phototransistor 600 nm
time
phototransistor 580
1050nm
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c 5802 transistor
Abstract: IAO5 Waitrony IE-2 WPTS-510D Rise time of photo transistor
Text: Photo Transistor Waitrony Module No.: WPTS-510D 1. General Description: The WPTS-510D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor
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WPTS-510D
WPTS-510D
c 5802 transistor
IAO5
Waitrony IE-2
Rise time of photo transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TSF3N03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TSF3N 03H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs
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TSF3N03HD/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by m t d f i n o 2h d /d SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD F1N 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor DUAL TMOS POWER MOSFET
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TDF1N02HD/D
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ASEA motor
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs
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TSF2P02HD/D
ASEA motor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TSF3N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TSF3N 02H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs
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TSF3N02HD/D
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transistor dk qq
Abstract: IRF540 motorola
Text: MOTOROLA O rder this docum ent by IRF540/D SEMICONDUCTOR TECHNICAL DATA Product Preview IR F540 TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy
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IRF540/D
transistor dk qq
IRF540 motorola
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S600M
Abstract: XR-T5992
Text: XR-T5992 z e r EX A R A D V A N C ED IN FO R M A TIO N Pulse Dialer FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION T h e X R - T 5 9 9 2 pulse dialer is a silicon gate C M O S inte grated circuit w hich converts push-button Inputs Into pulses to simulate a rotary telephone dial.
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XR-T5992
560kW
330kg
100kg
2N5401
2N5550
2N5401
S600M
XR-T5992
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2SC1622
Abstract: 622 t 3160E
Text: 2SC1622 Audio Frequency High Gain Amplifier NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS • High DC Current Gain: h FE=500 TYP. in m illim eters inches (VCE=3.0V, l c =0.5mA) 25'8t (0.098] (0 02) 1.5 E- 05 8 5?(o 02) H I”! ABSOLUTE M A X IM U M RATINGS
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2SC1622
2SC1622
622 t
3160E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMDF4P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F4P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power
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MMDF4P03HD/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TSF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M T S F 1P 02H D Medium Power Surface Mount Products TM OS Single P-Channel Field E ffect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs
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TSF1P02HD/D
46A-02
MICR08
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transistor H-R
Abstract: KST5088 KST5089 marking SAI
Text: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit - Collector-Base Voltage VcbO KST5088 KST5089 Collector-Emitter Voltage 35 30 . V ce O KST5088 KST5089 Emitter-Base Voltage
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KST5088/5089
KST5088
KST5089
100mA,
ST5089
transistor H-R
KST5088
KST5089
marking SAI
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05n60
Abstract: G05N60D
Text: MOTOROLA O rder this docum ent by M M G 05N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMG05N60D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his IG BT con tain s a b u ilt-in free w h ee lin g diod e and a gate
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05N60D/D
05n60
G05N60D
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f1n05 motorola
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M MDF1N05E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize M otorola’s TMOS process. These miniature surface
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MDF1N05E/D
MMDF1N05E
MMDF1N05E/D
f1n05 motorola
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PMBT4403 PNP switching transistor Product specification Supersedes data of 1997 May 05 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP switching transistor PMBT4403 FEATURES
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PMBT4403
PMBT4401.
PMBT4403
115002/00/03/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBT3906 PNP switching transistor Product specification Supersedes data of 1997 May 05 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification PNP switching transistor PMBT3906 FEATURES
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PMBT3906
PMBT3904.
PMBT3906
115002/00/03/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT3906 PNP switching transistor Product specification Supersedes data of 1997 May 05 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Product specification PNP switching transistor PXT3906 FEATURES
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PXT3906
PXT3904.
PXT3906
115002/00/03/pp8
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