TRANSISTOR AMPLIFIER 2.5 GHZ Search Results

fe 8622

Abstract: 422-371 23A025 521603 18896
Contextual Info: 23A025 2.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

rogers* 4403

Abstract: rogers 4403 HMC454 HMC454ST89
Contextual Info: V00.1004 PRODUCT APPLICATION NOTE Designing with the HMC454ST89 Amplifier Utilizing Small Signal S-parameters General Description The HMC454ST89 is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor HBT ½ watt MMIC amplifier operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain

2SA1245

Abstract: A1245
Contextual Info: TOSHIBA 2SA1245 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE 2 S A 1 245 O O HIGH FREQUENCY AMPLIFIER AND SWITCHING APPLICATIONS. Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. + 0.5 2.5 —0.3 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC

2SA1224

Abstract: E90115
Contextual Info: PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.5 GHz The NE901 Series of PNP silicon epitaxial transistors is designed for high frequency amplifier and high speed switch­

Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CRCW08050R0FKEA

Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
Contextual Info: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P

CGHV27100

Abstract: CGHV27 cree rf
Contextual Info: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is

cree rf

Contextual Info: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is

Contextual Info: H ITACHI 2SC5136-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fp = 3.8 GHz typ. • High gain, low noise figure PG = 11 dB typ., N F = 2.5 dB typ. at f = 9 00 MHz 1. Emitter

2SC2351

Contextual Info: 2SC2351 High Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS in m illim eters inches • Low Noise Figure: NF=1.5 dB TYP. (f= 1.0 GHz) • High Maximum Available Gain: MAG=14dB TYP. (f—1.0 GHz) 2.5 *8 ! {0 098) 0 5 l 8f|

2SC4390

Abstract: ITR06668 ITR06669 ITR06670 ITR06671
Contextual Info: Ordering number:ENN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .

2SC5136

Abstract: Hitachi DSA0014
Contextual Info: 2SC5136 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 3.8 GHz typ. • High gain, low noise figure PG = 11 dB typ., NF = 2.5 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector

ic 2648

Contextual Info: BFP 180W NPN Silicon RF Transistor 3
For low-power amplifier in mobile 4 communication systems pager at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz
F = 2.1 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

2SC5315

Contextual Info: 2SC5315 TO SH IBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series + 0.5 2.5-0.3 + 0.25 • • l<1-5 - 0-15. Low Noise Figure : NF = 1.3 dB (f = 2 GHz)

EN5045

Abstract: 5045-2 2SC5229 sanyo 982 TA-0244
Contextual Info: Ordering number:EN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Package Dimensions unit:mm 2038A [2SC5229] 4.5 1.6 1.5 0.4 1.0 2.5 • Low noise : NF=1.0dB typ f=1GHz . · High gain : S21e2=10.5dB typ (f=1GHz).

NF NPN Silicon Power transistor TO-3

Contextual Info: T O SH IB A 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF=1.8dB, |S2lel2 = 7.5dB f=2GHz +0.5 2.5-0.3 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TOSHIBA 2SC5315 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Unit in mm + 0.5 2.5-0.3 + 0.25 k 1-5 - ° - 15>i • Low Noise Figure : NF = 1.3dB (f=2GHz) •

2SC5094

Abstract: 6514 TRANSISTOR
Contextual Info: TOSHIBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • NF = 1.8dB, |S2lel2= 7.5dB f = 2GHz Unit in mm 2.5 4 0.5 0.3 • * - MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A TENTATIVE MT3S04 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1-0.5 -0.3 2.5 Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz + 0.25 1 5 - 0 . 15 .

Contextual Info: T O SH IB A TENTATIVE MT3S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1-0.5 -0.3 2.5 Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB at f= 2 GHz + 0.25 1 5 - 0 . 15 .

Contextual Info: TOSHIBA 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm w êf Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . + 0.5 2.5 -0 .3 + 0.25 Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2—7.5dB f —2GHz ^1-5 —0 .1 5 1 «o o

transistor kt 908

Abstract: ic 4458 51865 TA-0412 sanyo 555 2SC5276 EN5186 SANYO 414 marking mn
Contextual Info: Ordering number:EN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Package Dimensions unit:mm 2110A [2SC5276] 1.9 0.95 0.95 0.5 0.4 4 0.16 3 2.5 0 to 0.1 1.5 • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).