Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR AC Search Results

    TRANSISTOR AC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA


    Original     		PDF

    2SC4815

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		2SC4815 2SC4815 PDF

    2SC4813

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4813 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		2SC4813 2SC4813 PDF

    2SA1845

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1845 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1845 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		2SA1845 2SA1845 PDF

    2SA1847

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		2SA1847 2SA1847 PDF

    tip122 tip127 audio board

    Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
    Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents


    Original     		Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920 PDF

    2SA1843

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		2SA1843 2SA1843 PDF

    MMBT2907A

    Abstract: Application of MMBT2907A MMBT2907 MMBT2907 ON MMBT2222 MMBT2222A
    Text: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.


    Original     		MMBT2907 MMBT2907A MMBT2222 MMBT2222A OT-23 MMBT2907A Application of MMBT2907A MMBT2907 ON PDF

    MMBTSA1015

    Abstract: No abstract text available
    Text: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended.


    Original     		MMBTSA1015LT1 MMBTSC1815LT1 OT-23 150mA 100mA, 100Hz, MMBTSA1015 PDF

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original     		OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302 PDF

    MMBTSA1015

    Abstract: No abstract text available
    Text: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended.


    Original     		MMBTSA1015 MMBTSC1815 OT-23 150mA 100mA, 100Hz, MMBTSA1015 PDF

    hFE-200 transistor PNP

    Abstract: No abstract text available
    Text: MMBTSA1162 PNP Silicon Epitaxial Planar Transistor for AF general purpose amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC2712 is recommended.


    Original     		MMBTSA1162 MMBTSC2712 OT-23 100mA, 100Hz, hFE-200 transistor PNP PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1162 PNP Silicon Epitaxial Planar Transistor for AF general purpose amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC2712 is recommended.


    Original     		MMBTSA1162 MMBTSC2712 OT-23 100mA, 100Hz, PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended.


    Original     		MMBTSA1015LT1 MMBTSC1815LT1 OT-23 150mA 100mA, 100Hz, PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTSC1815LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015LT1 is recommended.


    Original     		MMBTSC1815LT1 MMBTSA1015LT1 OT-23 150mA 100mA, PDF

    2sa1048 transistor

    Abstract: transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SC2458 2SA104
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


    Original     		2SA1048 2SC2458 100mA, 2sa1048 transistor transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SA104 PDF

    2sa1048 transistor

    Abstract: 2SA1048 2sc2458 equivalent 2SC2458
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


    Original     		2SA1048 2SC2458 100mA, 2sa1048 transistor 2SA1048 2sc2458 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTSC1815LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015LT1 is recommended.


    Original     		MMBTSC1815LT1 MMBTSA1015LT1 OT-23 150mA 100mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended.


    Original     		MMBTSA1015 MMBTSC1815 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTSB1198KLT1 PNP Silicon Epitaxial Planar Transistor Low-frequency Transistor -80V, -0.5A The transistor is subdivided into two groups Q and R, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol Value


    Original     		MMBTSB1198KLT1 OT-23 -50mA 100MHz PDF

    2SC2458

    Abstract: 2sc2458 equivalent 2SA1048
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


    Original     		2SA1048 2SC2458 100mA, 2sc2458 equivalent 2SA1048 PDF

    2sa1048 transistor

    Abstract: 2sc2458 equivalent 2SA1048 2SC2458
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


    Original     		2SA1048 2SC2458 100mA, 2sa1048 transistor 2sc2458 equivalent 2SA1048 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTSB1198KLT1 PNP Silicon Epitaxial Planar Transistor Low-frequency Transistor -80V, -0.5A The transistor is subdivided into two groups Q and R, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol Value


    Original     		MMBTSB1198KLT1 OT-23 -50mA 100MHz PDF

    NPN Silicon Epitaxial Planar Transistor

    Abstract: No abstract text available
    Text: MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended.


    Original     		MMBTSC1815 MMBTSA1015 OT-23 10Kat 150mA NPN Silicon Epitaxial Planar Transistor PDF