MMBTSA1015 Search Results
MMBTSA1015 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
NPN Silicon Epitaxial Planar TransistorContextual Info: MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. |
Original |
MMBTSC1815 MMBTSA1015 OT-23 10Kat 150mA NPN Silicon Epitaxial Planar Transistor | |
Contextual Info: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended. |
Original |
MMBTSA1015LT1 MMBTSC1815LT1 OT-23 150mA 100mA, 100Hz, | |
Contextual Info: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended. |
Original |
MMBTSA1015 MMBTSC1815 OT-23 150mA 100mA, 100Hz, | |
Contextual Info: MMBTSC1815LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015LT1 is recommended. |
Original |
MMBTSC1815LT1 MMBTSA1015LT1 OT-23 150mA 100mA, | |
MMBTSA1015Contextual Info: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended. |
Original |
MMBTSA1015LT1 MMBTSC1815LT1 OT-23 150mA 100mA, 100Hz, MMBTSA1015 | |
MMBTSA1015Contextual Info: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended. |
Original |
MMBTSA1015 MMBTSC1815 OT-23 150mA 100mA, 100Hz, MMBTSA1015 | |
Contextual Info: MMBTSC1815LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015LT1 is recommended. |
Original |
MMBTSC1815LT1 MMBTSA1015LT1 OT-23 150mA 100mA, | |
hFE transistor 200Contextual Info: MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. |
Original |
MMBTSC1815 MMBTSA1015 OT-23 10Kat 150mA hFE transistor 200 | |
Contextual Info: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended. |
Original |
MMBTSA1015 MMBTSC1815 OT-23 | |
Contextual Info: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended. |
Original |
MMBTSA1015LT1 MMBTSC1815LT1 OT-23 150mA 100mA, 100Hz, |