TRANSISTOR A89 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

PDTA124XE

Abstract: PDTC124
Contextual Info: DISCRETE SEMICONDUCTORS PDTC124XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE

fp104

Contextual Info: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,

marking EB 202 diode

Abstract: 2SA1729 FP104 SB05-05CP marking EB 202 transistor EN4655
Contextual Info: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,

2SA1370

Contextual Info: Ordering num ber: EN4497 _ FP212 No.4497 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Driver Applications F eatu re s • Composite type with a PNP transistor and an NPN transistor, in one package, facilitating highdensity mounting.

Contextual Info: Ordering num ber: EN 4 4 9 6 SANYO _FP203 PNP/NPN Epitaxial Planar Silicon Transistors No.4496 i Push-Pull Circuits F eatu res • Composite type with 2 transistors of PNP transistor and NPN transistor, facilitating high-density mounting.

marking 202

Abstract: fp104
Contextual Info: Ordering number : E N 4655 FP104 No. 4655 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu res • Composite type with 2 devices PNP transistor and Schottky barrier diode contained in one package,

2SB1122

Abstract: 2SD1622 FP203 2SB1122 equivalent
Contextual Info: Ordering number:EN4496 FP203 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuits Features Package Dimensions • Composite type with 2 transistors of PNP transistor and NPN transistor,facilitating high-density mounting. · The FP203 is formed with chips, being equivalent to

Contextual Info: Ordering num ber:EN4493 _ FP204 No.4493 i PNP/NPN Epitaxial Planar Silicon Transistors SAMYO i Push-Pull Circuit Applications F e a tu re s • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density

marking 212

Abstract: 2SA1370 2SC3467 FP212 44974
Contextual Info: Ordering number:EN4497 FP212 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Driver Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor, in one package, facilitating high-density mounting. · The FP212 is composed of 2 chips, one being

2097a

Abstract: 2SB1123 2SD1623 FP204 EN4493 marking 204
Contextual Info: Ordering number:EN4493 FP204 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. · The FP204 is composed of 2 chips, one being

EN4494

Abstract: 2SA1416 2SC3646 FP205 marking 205
Contextual Info: Ordering number:EN4494 FP205 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. · The FP205 is composed of 2 chips, one being

2SA1370

Abstract: 2SC3467 FP212
Contextual Info: Ordering number:EN4497 FP212 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Driver Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor, in one package, facilitating high-density mounting. · The FP212 is composed of 2 chips, one being

Contextual Info: Ordering number: E N 4655 _ No.4655 FP104 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications I F e a tu re s - Composite type with 2 devices PNP transistor and Schottky barrier diode contained in one package,

9412 transistor

Abstract: 2SA1881 2SC4983 transistor 9412 2SC498
Contextual Info: Ordering number:4661 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1881/2SC4983 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions • AF power amplifier, medium-speed switching, smallsized motor drivers and LED drivers. unit:mm

transistor t09

Abstract: PDTC114EU
Contextual Info: Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES • Built-in bias resistors R1 and R2 typ. 10 kO each H • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS 13— B

47Z3

Abstract: 2SC4987 1000-23 EN4723
Contextual Info: Ordering number :E N 4 72 3 SANYO _2SC4987 NPN Epitaxial Planar Silicon Transistor No.4723 i High-Speed Switching Applications F eatu res • Fast switching speed. • Low collector saturation voltage. • High gain-bandwidth product. • Small collector capacitance.

marking B4

Abstract: 2SC4987 B5 SANYO
Contextual Info: Ordering number:EN4723 NPN Epitaxial Planar Silicon Transistor 2SC4987 High-Speed Switching Applications Package Dimensions • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacitance. · Very small-sized package permitting 2SC4987applied sets to be made small and slim.

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

Contextual Info: O r d e rin g n u m b e r : E N 4 4 9 4 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransistors SAXYO i Push-Pull Circuit Applications F e a tu re s • Composite type with a PN P transistor and an NPN tran sisto r in one package, facilitating high-density

TC518512FTL-70

Contextual Info: 5 2 4 ,2 8 8 W O R D S x 8 8 IT CMOS PSEUDO S T A T IC RAM PRELIMINARY D E S C R IP T IO N T he T C 5 1 8 5 1 2 P L F am ily is a 4M b it high speed CM OS Pseudo S tatic RAM organized as 5 2 4 ,2 8 8 words by 8 bits. T he T C 5 1 8 5 1 2 P L F am ily u tilizin g one transistor dynamic memory cell with CM OS

CA89

Abstract: SMA89 transistor A89
Contextual Info: A89/SMA89 100 TO 800 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >29 dB TYP. · LOW INPUT VSWR: 1.4:1 (TYP.) · HIGH LEVEL OUTPUT: +17.5 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 12/00)* Characteristics Typical Frequency Small Signal Gain (min.)

STELLEX

Contextual Info: A89/SMA89 100 TO 800 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >29 dB TYP. · LOW INPUT VSWR: 1.4:1 (TYP.) · HIGH LEVEL OUTPUT: +17.5 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 12/00)* Characteristics Typical Guaranteed

transistor A89

Contextual Info: A89/SMA89 100 TO 800 MHz TO-8 CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >29 dB TYP. · LOW INPUT VSWR: 1.4:1 (TYP.) · HIGH LEVEL OUTPUT: +17.5 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 6/02)* Characteristics Typical Frequency