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    TRANSISTOR A3Y Search Results

    TRANSISTOR A3Y Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A3Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BA2rc

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288118 288M-BIT PD48288118 BA2rc

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288118 288M-BIT PD48288118

    ST3403

    Abstract: No abstract text available
    Text: P Channel Enchancement Mode MOSFET ST3403 -3.5A DESCRIPTION The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF ST3403 ST3403 OT-23-3L -30V/-2 105m-ohm 115m-ohm -4OT-23-3L

    p144f

    Abstract: TDK EF25 BAP36 PD482
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118-A 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288118-A 288M-BIT PD48288118-A M8E0904E p144f TDK EF25 BAP36 PD482

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288118 288M-BIT PD48288118

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288118-A 288M-BIT Low Latency DRAM Separate I/O R10DS0157EJ0100 Rev.1.00 Feb 01, 2013 Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288118-A 288M-BIT R10DS0157EJ0100 PD48288118-A

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0200

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet PD48288109A μPD48288118A R10DS0098EJ0001 Rev.0.01 August 2, 2011 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288109A PD48288118A R10DS0098EJ0001 288M-BIT PD48288109A 432-word PD48288118A 216-word

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0100 Rev.1.00 February 28, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0100

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0200

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0300 Rev.3.00 Oct 01, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0300

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0300

    PD48576109,

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0100 Rev.1.00 September 27, 2011 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0100 PD48576109,

    BA1 K11

    Abstract: ba1d1a PD48576118FF-E24-DW1-A
    Text: Preliminary Datasheet PD48576109-A μPD48576118-A R10DS0064EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Separate I/O Description The μPD48576109-A is a 67,108,864-word by 9 bit and the μPD48576118-A is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109-A PD48576118-A R10DS0064EJ0001 PD48576109-A 864-word PD48576118-A BA1 K11 ba1d1a PD48576118FF-E24-DW1-A

    FTF7040M

    Abstract: 74ACT04 BAS28 BG40 ccd application vns Dalsa
    Text: IMAGE SENSORS DATA SHEET FTF7040M in PGA 28M Full-Frame CCD Image Sensor Preliminary product specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Preliminary Specification 28M Full-Frame CCD Image Sensor • 28M active pixels 7168H x 4096V


    Original     		PDF FTF7040M 7168H 74ACT04 BAS28 BG40 ccd application vns Dalsa

    transistor npn d 2058

    Abstract: FTF2020 FT2020M CG1 HOYA ccd application vns FTF2020M CCD IMAGE Dalsa FT202 pnp transistor 9015
    Text: IMAGE SENSORS DATA SHEET FTF2020M 4M Full Frame CCD Image Sensor Product specification DALSA Professional Imaging 2007 April 10 DALSA Professional Imaging Product Specification 4M Full-Frame CCD Image Sensor FTF2020M • Image format 24 x 24 mm • 4M active pixels (2048H x 2048V)


    Original     		PDF FTF2020M 2048H transistor npn d 2058 FTF2020 FT2020M CG1 HOYA ccd application vns FTF2020M CCD IMAGE Dalsa FT202 pnp transistor 9015

    ccd color Linear Image Sensor

    Abstract: CCD Linear Image Sensor diode a4W FTF5033C 5717 Diode Mark D10 N10 a1w* transistor A1W TRANSISTOR ccd image sensor linear ccd sensor
    Text: IMAGE SENSORS DATA SHEET FTF5033C 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033C 35mm film compatible image format


    Original     		PDF FTF5033C 4992H ccd color Linear Image Sensor CCD Linear Image Sensor diode a4W FTF5033C 5717 Diode Mark D10 N10 a1w* transistor A1W TRANSISTOR ccd image sensor linear ccd sensor

    FTF5033M

    Abstract: asp 962 image sensor CCD IMAGE ccd image sensor diode a4W BAS28 BAT74 BC860C BFR92
    Text: IMAGE SENSORS DATA SHEET FTF5033M 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033M 35mm film compatible image format


    Original     		PDF FTF5033M 4992H FTF5033M asp 962 image sensor CCD IMAGE ccd image sensor diode a4W BAS28 BAT74 BC860C BFR92

    FTF5066M

    Abstract: B688 Transistor TG p10 CCD IMAGE ccd image sensor Dalsa 75151 CCD Linear Image Sensor dalsa cmos diode a4W
    Text: IMAGE SENSORS DATA SHEET FTF5066M 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066M • Image format 36 x 48 mm • 33M active pixels (4992H x 6668V)


    Original     		PDF FTF5066M 4992H FTF5066M B688 Transistor TG p10 CCD IMAGE ccd image sensor Dalsa 75151 CCD Linear Image Sensor dalsa cmos diode a4W

    FTF4052

    Abstract: FTF4027 tp 4056 datasheet Melles Griot amplifier ccd color Linear Image Sensor CCD IMAGE diode a4W tp 4056 a4w 41 A1W TRANSISTOR
    Text: IMAGE SENSORS DATA SHEET FTF4027C 11M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2009 April 24 DALSA Professional Imaging Preliminary Specification 11M Full-Frame CCD Image Sensor FTF4027C • 35mm film compatible image format 36 x 24 mm


    Original     		PDF FTF4027C 4008H FTF4052 FTF4027 tp 4056 datasheet Melles Griot amplifier ccd color Linear Image Sensor CCD IMAGE diode a4W tp 4056 a4w 41 A1W TRANSISTOR

    a4w transistor

    Abstract: No abstract text available
    Text: IMAGE SENSORS DATA SHEET FTF5033C 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2007, March 01 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033C 35mm film compatible image format


    Original     		PDF FTF5033C FTF5033C 4992H a4w transistor

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp