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    TRANSISTOR A331 Search Results

    TRANSISTOR A331 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A331 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    capacitor 104 Z5

    Abstract: resistor A331 TRANSISTOR A331 A153 A331 DCS1800 MRF6404 motorola 572 transistor 150 watts power amplifier layout ATC 100A
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


    Original     		PDF MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular capacitor 104 Z5 resistor A331 TRANSISTOR A331 A153 A331 motorola 572 transistor 150 watts power amplifier layout ATC 100A

    TRANSISTOR A331

    Abstract: 395C-01
    Text: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		PDF MRF6404/D MRF6404 DCS1800 PCS1900/Cellular TRANSISTOR A331 395C-01

    TRANSISTOR A331

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


    Original     		PDF MRF6404/D MRF6404 DCS1800 PCS1900/Cellular MRF6404 MRF6404/D TRANSISTOR A331

    TRANSISTOR A331

    Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


    Original     		PDF MRF6404/D MRF6404 MRF6404K MRF6404 DCS1800 PCS1900/Cellular MRF6404/D* TRANSISTOR A331 transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

    11Z4

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		PDF MRF6404 DCS1800 PCS1900/Cellular MRF6404 11Z4

    TRANSISTOR D400

    Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)


    Original     		PDF 2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1812 2SA1727 2SA1776 96-609-A313) 2SA1834 2SC5001 TRANSISTOR D400 D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V

    TRANSISTOR A331

    Abstract: No abstract text available
    Text: Cascadable Amplifier 2 to 2400 MHz A33-1/ SMA33-1 V3 Features Product Image • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. • MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Description The A33-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing


    Original     		PDF A33-1/ SMA33-1 A33-1 MIL-STD-883 TRANSISTOR A331

    TRANSISTOR A331

    Abstract: A331 transistor A33-1 CA33-1 SMA33-1 ON A33
    Text: A33-1 / SMA33-1 Cascadable Amplifier 2 to 2400 MHz Rev. V3 Features Product Image • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. • MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Description The A33-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing


    Original     		PDF A33-1 SMA33-1 MIL-STD-883 TRANSISTOR A331 A331 transistor CA33-1 SMA33-1 ON A33

    A331 transistor

    Abstract: No abstract text available
    Text: A33-1/SMA33-1 2 TO 2400 MHz CASCADABLE AMPLIFIER • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. · MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.)


    Original     		PDF A33-1/SMA33-1 50-ohm A33-1 SMA33-1 CA33-1 A331 transistor

    TRANSISTOR A331

    Abstract: A33-1 CA33-1 SMA33-1
    Text: A33-1/SMA33-1 2 TO 2400 MHz CASCADABLE AMPLIFIER • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. · MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.)


    Original     		PDF A33-1/SMA33-1 A33-1 SMA33-1 CA33-1 TRANSISTOR A331 A33-1 CA33-1 SMA33-1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		PDF MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular

    37281

    Abstract: TRANSISTOR A331 transistor 31C resistor A331 A153 A331 DCS1800 MRF6404
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		PDF MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular 37281 TRANSISTOR A331 transistor 31C resistor A331 A153 A331

    MOTOROLA SCR 1725

    Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
    Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1


    Original     		PDF DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901

    h3ba omron timer

    Abstract: omron h3ba timer H3BA timer wiring diagram TRIAC TAG 9105 omron MA415a
    Text: Cat. No. Z901-E1-05 SYSMAC NE1S Series NE1S-CPU01 Programmable Controller OPERATION MANUAL NE1S Series NE1S-CPU01 Programmable Controller Operation Manual Revised December 2006 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator


    Original     		PDF Z901-E1-05 NE1S-CPU01 847-843-7900/Fax: NE1S-CPU01 h3ba omron timer omron h3ba timer H3BA timer wiring diagram TRIAC TAG 9105 omron MA415a

    smr-3822

    Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
    Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM


    Original     		PDF Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter

    PH1819-60

    Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
    Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies


    Original     		PDF

    88C196

    Abstract: 87C196KD 87C196KC 88C196EC 1F42 capacitor 1e77 A3284 mcs-96 programmers guide 1e77 87C196LA
    Text: 8XC196EA Microcontroller User’s Manual December 1998 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions


    Original     		PDF 8XC196EA 88C196 87C196KD 87C196KC 88C196EC 1F42 capacitor 1e77 A3284 mcs-96 programmers guide 1e77 87C196LA

    capacitor ase 104

    Abstract: Z808 w188 trimm resistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 MRF6404K NPN S ilicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz.


    OCR Scan     		PDF MRF6404 DCS1800 1900/Cellular MRF6404K Collector-E100A MRF6404K capacitor ase 104 Z808 w188 trimm resistor

    RF640

    Abstract: ez808 transistor b 745 RF6404 capacitor 104 Z5 R/Vitramon
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. 30 W , 1.88 GHz


    OCR Scan     		PDF MRF6404 DCS1800 PCS1900/Cellular MRF6404K RF6404 RF6404K F6404 MRF6404K RF640 ez808 transistor b 745 capacitor 104 Z5 R/Vitramon

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor T he M R F 6 4 0 4 is d e sig ned fo r 26 vo lts m icro w a ve large sig na l, com m o n em itter, cla ss AB linea r a m p lifie r a p p lica tio n s op e ra tin g in th e range 1.8 to


    OCR Scan     		PDF MRF6404/D

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


    OCR Scan     		PDF

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


    OCR Scan     		PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    Untitled

    Abstract: No abstract text available
    Text: u u U A33-1 / SMA33-1 2 to 2400 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ ULTRAWIDE BANDWIDTH: 1 - 2600 MHz TYP. ♦ MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Outline Drawings Specifications’* Characteristics Frequency (Min.) Small Signal Gain (Min.)


    OCR Scan     		PDF A33-1 SMA33-1 A33-1 50-ohm 1-800-WJ1-4401

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


    OCR Scan     		PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902