DSP56300
Abstract: DSP56303 G38-87 AA0482
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or
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DSP56303
AA0500
DSP56303/D
DSP56300
G38-87
AA0482
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Response AA0482
Abstract: AA0463 AA0470 AA0482 284 278 DSP56300 DSP56302 G38-87 AA-0481 AA0460
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56302 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56302 specifications are preliminary and are from design simulations, and may not be fully tested or
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DSP56302
AA0500
DSP56302/D
Response AA0482
AA0463
AA0470
AA0482
284 278
DSP56300
G38-87
AA-0481
AA0460
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EM7164SU16
Abstract: No abstract text available
Text: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision
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EM7164SU16
1Mx16
690-7t
100ns
120ns
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d2493
Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10
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A1186.
A1215.
A1216.
A1262.
A1294.
A1295.
A1303.
A1386/A
A1488/A
A1492.
d2493
c4468
transistor D2562 B1649
c4467
c4381
c4131
transistor A1492
a1695 power transistor
c4153
c3852
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c4381
Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494
Text: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10
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A1186.
A1215.
A1216.
A1262.
A1294.
A1295.
A1303.
A1386/A
A1488/A
A1492.
c4381
D2493
c4467
c4468
C4131
c4467 a1694
C3519
c3852
C3834
d2494
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D2641
Abstract: c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300
Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10
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A1186.
A1215.
A1216.
A1262.
A1294.
A1295.
A1303.
A1386/A
A1488/A
A1492.
D2641
c4381
transistor A114
C5239
b1686
c4517
C4131
C3284
c4467
C4300
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Untitled
Abstract: No abstract text available
Text: 2SA1705 Ordering number : EN3025A SANYO Semiconductors DATA SHEET 2SA1705 PNP Epitaxial Planar Silicon Transistor Low-Frequency Power Amplifier Applications Applicaitons • Voltage regulators, relay drivers, lamp drivers Features • • Adoption of FBET process
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2SA1705
EN3025A
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Untitled
Abstract: No abstract text available
Text: 2SA1768 Ordering number : EN3582A SANYO Semiconductors DATA SHEET 2SA1768 PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applicaitons • Color TV sound output, converter, inverter Features • • • Adoption of MBIT process
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2SA1768
EN3582A
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Untitled
Abstract: No abstract text available
Text: 2SA1707 / 2SC4487 Ordering number : EN3093A SANYO Semiconductors DATA SHEET 2SA1707 / 2SC4487 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features • • Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage
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2SA1707
2SC4487
EN3093A
2SA1707
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Untitled
Abstract: No abstract text available
Text: 2SA1706 Ordering number : EN3026B SANYO Semiconductors DATA SHEET 2SA1706 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applicaitons • Voltage regulators, relay drivers, lamp drivers Features • • • Adoption of FBET, MBIT processes
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2SA1706
EN3026B
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Untitled
Abstract: No abstract text available
Text: 2SA1770 / 2SC4614 Ordering number : EN3578A SANYO Semiconductors DATA SHEET 2SA1770 / 2SC4614 PNP/NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • Adoption of MBIT process High breakdown voltage and large current capacity
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2SA1770
2SC4614
EN3578A
2SA1770
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transistor a1706
Abstract: a1706
Text: 2SA1706 Ordering number : EN3026B SANYO Semiconductors DATA SHEET 2SA1706 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applicaitons • Voltage regulators, relay drivers, lamp drivers Features • • • Adoption of FBET, MBIT processes
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EN3026B
2SA1706
transistor a1706
a1706
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transistor A2222
Abstract: A2222 2SA2222SG 2sa2222 ENA1799 A1799 2SA22
Text: 2SA2222SG Ordering number : ENA1799 SANYO Semiconductors DATA SHEET 2SA2222SG PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Adoption of MBIT process
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2SA2222SG
ENA1799
--10A)
--250mV
A1799-4/4
transistor A2222
A2222
2SA2222SG
2sa2222
ENA1799
A1799
2SA22
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transistor A2222
Abstract: a2222 2SA2222SG ENA1799B A1799 2SA2222 a2222sg 2SA222 D2612 ENA1799
Text: 2SA2222SG Ordering number : ENA1799B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2222SG High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Large current capacity IC=-10A
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ENA1799B
2SA2222SG
--10A)
--250mV
A1799-7/7
transistor A2222
a2222
2SA2222SG
ENA1799B
A1799
2SA2222
a2222sg
2SA222
D2612
ENA1799
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS 2PA1774J PNP general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors 1999 May 04 PHILIPS PHILIPS Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774J
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2PA1774J
2PA1774J
SC-89
SCA63
5002/00/02/pp8
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2P transistor
Abstract: l43 transistor
Text: DISCRETE SEMICONDUCTORS a ffi S H E E T 2PA1774J PNP general purpose transistor 1998 Nov 10 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774J FEATURES
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2PA1774J
2PA1774J
SC-89
SCA60
115104/00/01/pp8
2P transistor
l43 transistor
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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iocco
Abstract: TRANSISTOR D 1786 2SA1786 2SC4646 3512B C4646 A1786 24646
Text: Ordering number: E N 3 5 1 2 B 2SA1786/2SC4646 N0.3512B 2SA1786:PNP Epitaxial Planar Silicon Transistor 2SC4646:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications F e a tu re s • Large current capacity Iq = 2A •High breakdown voltage (Vceo —400V)
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EN3512B
3512B
2SA1786/2SC4646
2SA1786
2SC4646
2SA1786
iocco
TRANSISTOR D 1786
3512B
C4646
A1786
24646
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BFG134
Abstract: BJE 247
Text: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for
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3131S
BFG134
OT103
OT103.
BFG134
BJE 247
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A1774
Abstract: A933A
Text: Transistors General Purpose Transistor -50V, 0.15A 2SA1037AK / 2SA1576A / 2S A1774 / 2S A933AS • F e a tu re s 1 ) Excellent Ii f e linearity. 2) Complements the 2SC2412K/ 2SC4081 / 2SC4617/ 2SC1740S. •E xte rn a l dimensions (Units: mm) •Stru ctu re
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2SA1037AK
2SA1576A
A1774
A933AS
2SC2412K/
2SC4081
2SC4617/
2SC1740S.
96-89-A32)
2SA1037AK,
A933A
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A1727
Abstract: A1727 transistor
Text: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A1727*Q, where ★ is hFE code and □ is lot number • high breakdown voltage, V qeo = - 400V low collector saturation voltage, ^C E (sat) ^ -1.0 V for
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2SA1727F5
SC-63)
A1727
A/-10
2SA1727F5
A1727 transistor
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A1727 transistor
Abstract: A1727 transistor C1000 J001 transistor a1727 c1000 transistor 2sa 102 transistor D014B 2sa172 transistor 81 120 w 63
Text: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: A1727-AQ, where ★ is hFE code and □ is lot number 6.5 ± 0.2 high breakdown voltage, r r • 2SA1727F5 (CPT F5) C1 51 -0.1 I 1 V q e o = _4 0 0 V
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2SA1727F5
SC-63)
A1727
A/-10
2SA1727F5
C1000
A1727 transistor
transistor C1000
J001
transistor a1727
c1000 transistor
2sa 102 transistor
D014B
2sa172
transistor 81 120 w 63
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