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    TRANSISTOR A117 Search Results

    TRANSISTOR A117 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A117 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N PDF

    transistor 649A

    Abstract: H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 649A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:A117AJ-00 芯片厚度:240±20µm 管芯尺寸:1170x1170µm 2 焊位尺寸:B 极 272×192µm 2;E 极 226×298µm 2


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    100mm A117AJ-00 2SB649AHS649AH649A O-126TO-126ML -180V -160V transistor 649A H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A PDF

    AN27701

    Abstract: SMD Hall 702 TRANSISTOR smd SMD Hall C A1172 AMS-702 transistor SMD 702 transistor 702 smd power
    Text: A1172 Micropower Ultra-Sensitive Hall-Effect Switch Features and Benefits Description ▪ Micropower operation ▪ Operation with either north or south pole— no magnetic orientation required during assembly ▪ 1.65 to 3.5 V battery operation ▪ Chopper stabilization


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    A1172 A1172 AN27701 SMD Hall 702 TRANSISTOR smd SMD Hall C AMS-702 transistor SMD 702 transistor 702 smd power PDF

    AN27701

    Abstract: No abstract text available
    Text: A1172 Micropower Ultra-Sensitive Hall-Effect Switch Features and Benefits Description ▪ Micropower operation ▪ Operation with either north or south pole— no magnetic orientation required during assembly ▪ 1.65 to 3.5 V battery operation ▪ Chopper stabilization


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    A1172 A1172 AN27701 PDF

    AN27701

    Abstract: Allegro Hall-Effect ICs 702 TRANSISTOR smd A1172 AMS-702 AN27703 702 switching TRANSISTOR smd hall smd 4 pin HALL-EF 41 SMD Hall
    Text: A1172 Micropower Ultra-Sensitive Hall-Effect Switch Features and Benefits Description ▪ Micropower operation ▪ Operation with either north or south pole— no magnetic orientation required during assembly ▪ 1.65 to 3.5 V battery operation ▪ Chopper stabilization


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    A1172 A1172 AN27701 Allegro Hall-Effect ICs 702 TRANSISTOR smd AMS-702 AN27703 702 switching TRANSISTOR smd hall smd 4 pin HALL-EF 41 SMD Hall PDF

    AN27701

    Abstract: AMS-702 702 y smd TRANSISTOR
    Text: A1172 Micropower Ultra-Sensitive Hall-Effect Switch Features and Benefits Description ▪ Micropower operation ▪ Operation with either north or south pole— no magnetic orientation required during assembly ▪ 1.65 to 3.5 V battery operation ▪ Chopper stabilization


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    A1172 AN27701 AMS-702 702 y smd TRANSISTOR PDF

    SMD Hall

    Abstract: smd hall effect sensor AN27701 702 TRANSISTOR smd Allegro Hall-Effect ICs hall 506 ua SMD Hall C A1172 AMS-702 AN27703
    Text: A1172 Micropower Ultra-Sensitive Hall-Effect Switch Features and Benefits Description ▪ Micropower operation ▪ Operation with either north or south pole— no magnetic orientation required during assembly ▪ 1.65 to 3.5 V battery operation ▪ Chopper stabilization


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    A1172 A1172 SMD Hall smd hall effect sensor AN27701 702 TRANSISTOR smd Allegro Hall-Effect ICs hall 506 ua SMD Hall C AMS-702 AN27703 PDF

    AN27703

    Abstract: No abstract text available
    Text: A1172 Micropower Ultra-Sensitive Hall-Effect Switch Description Features and Benefits Micropower operation Operation with either north or south pole— no magnetic orientation required during assembly 1.65 to 3.5 V battery operation Chopper stabilization Superior temperature stability


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    A1172 A1172 AN27703 PDF

    AN27701

    Abstract: AN27703 AMS-702 A1172 Hall-Effect IC Applications Guide
    Text: A1172 Micropower Ultra-Sensitive Hall-Effect Switch Features and Benefits Description ▪ Micropower operation ▪ Operation with either north or south pole— no magnetic orientation required during assembly ▪ 1.65 to 3.5 V battery operation ▪ Chopper stabilization


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    A1172 AN27701 AN27703 AMS-702 Hall-Effect IC Applications Guide PDF

    AN27703

    Abstract: 702 smd transistor AMS-702
    Text: A1172 Micropower Ultra-Sensitive Hall-Effect Switch Features and Benefits Description ▪ Micropower operation ▪ Operation with either north or south pole— no magnetic orientation required during assembly ▪ 1.65 to 3.5 V battery operation ▪ Chopper stabilization


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    A1172 AN27703 702 smd transistor AMS-702 PDF

    Untitled

    Abstract: No abstract text available
    Text: A1172 Micropower Ultra-Sensitive Hall-Effect Switch Last Time Buy This part is in production but has been determined to be LAST TIME BUY. This classification indicates that the product is obsolete and notice has been given. Sale of this device is currently


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    A1172 PDF

    A1171

    Abstract: A1171EEWLT-P AMS-702 IPC7351 MO-229
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ 1.65 to 3.5 V battery operation Low supply current High sensitivity, BOP typically 30 G 3.0 mT Operation with either north or south pole Configurable unipolar or omnipolar magnetic sensing


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    A1171 A1171 A1171EEWLT-P AMS-702 IPC7351 MO-229 PDF

    Untitled

    Abstract: No abstract text available
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low


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    A1171 PDF

    A1171

    Abstract: A1171EEWLT-P AMS-702 IPC7351 w1750
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low


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    A1171 A1171 A1171EEWLT-P AMS-702 IPC7351 w1750 PDF

    Untitled

    Abstract: No abstract text available
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low


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    A1171 PDF

    hall smd 4 pin allegro

    Abstract: A1171 A1171EEWLT-P AMS-702 IPC7351 MOSFET Based Chopper
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low


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    A1171 A1171 hall smd 4 pin allegro A1171EEWLT-P AMS-702 IPC7351 MOSFET Based Chopper PDF

    hall smd 4 pin allegro

    Abstract: transistor 702 smd power
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low


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    A1171 hall smd 4 pin allegro transistor 702 smd power PDF

    hall smd 4 pin allegro

    Abstract: A1171
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low


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    A1171 hall smd 4 pin allegro PDF

    CPM2C

    Abstract: CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110
    Text: Micro Programmable Controller CPM2C Omron’s powerful CPM2C micro controller redefines the traditional micro PLC. The CPM2C’s 33 mm width allows it to fit into small spaces, offers 119 instructions, and has processing speeds rivaling many ‘small’ PLCs.


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    RS-232C/Peripheral R301-E3-01 CPM2C CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SC2780 is designed fo r audio frequency pre a m p lifie r app lica tion, especially in H y b rid Integrated Circuits, FEATURES PACKAGE DIMENSIONS


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    2SC2780 2SC2780 A1173 PDF

    2SA1173

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA1173 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DE SC R IPTIO N The 2S A 1173 is designed fo r audio frequency p ream plifier app lica tion, especially in H y b rid Integrated Circuits. FEATURES • W orld Standard M inia tu re Package


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    2SA1173 2SA1173 2SC2780 A1173 PDF

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 PDF

    transistor C5080

    Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
    Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295


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    3SK228 3SK239A 3SK309 3SK186 3SK295 3SK194 BB101M BB101C 3SK296 2SC2732 transistor C5080 transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965 PDF