TRANSISTOR A117 Search Results
TRANSISTOR A117 Result Highlights (3)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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INA117PG4 |
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High Common-Mode Voltage Difference Amplifier 8-PDIP |
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PGA117AIPWR |
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Zero-Drift, Programmable Gain Amplifier with MUX 20-TSSOP -40 to 125 |
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INA117P |
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High Common-Mode Voltage Difference Amplifier 8-PDIP |
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TRANSISTOR A117 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
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2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 | |
Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SC2780 is designed fo r audio frequency pre a m p lifie r app lica tion, especially in H y b rid Integrated Circuits, FEATURES PACKAGE DIMENSIONS |
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2SC2780 2SC2780 A1173 | |
2SA1173Contextual Info: SILICON TRANSISTOR 2SA1173 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DE SC R IPTIO N The 2S A 1173 is designed fo r audio frequency p ream plifier app lica tion, especially in H y b rid Integrated Circuits. FEATURES • W orld Standard M inia tu re Package |
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2SA1173 2SA1173 2SC2780 A1173 | |
MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
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108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 | |
c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
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1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N | |
transistor 649A
Abstract: H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A
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100mm A117AJ-00 2SB649AHS649AH649A O-126TO-126ML -180V -160V transistor 649A H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A | |
AN27701
Abstract: SMD Hall 702 TRANSISTOR smd SMD Hall C A1172 AMS-702 transistor SMD 702 transistor 702 smd power
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A1172 A1172 AN27701 SMD Hall 702 TRANSISTOR smd SMD Hall C AMS-702 transistor SMD 702 transistor 702 smd power | |
AN27701Contextual Info: A1172 Micropower Ultra-Sensitive Hall-Effect Switch Features and Benefits Description ▪ Micropower operation ▪ Operation with either north or south pole— no magnetic orientation required during assembly ▪ 1.65 to 3.5 V battery operation ▪ Chopper stabilization |
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A1172 A1172 AN27701 | |
AN27701
Abstract: Allegro Hall-Effect ICs 702 TRANSISTOR smd A1172 AMS-702 AN27703 702 switching TRANSISTOR smd hall smd 4 pin HALL-EF 41 SMD Hall
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A1172 A1172 AN27701 Allegro Hall-Effect ICs 702 TRANSISTOR smd AMS-702 AN27703 702 switching TRANSISTOR smd hall smd 4 pin HALL-EF 41 SMD Hall | |
AN27701
Abstract: AMS-702 702 y smd TRANSISTOR
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A1172 AN27701 AMS-702 702 y smd TRANSISTOR | |
SMD Hall
Abstract: smd hall effect sensor AN27701 702 TRANSISTOR smd Allegro Hall-Effect ICs hall 506 ua SMD Hall C A1172 AMS-702 AN27703
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A1172 A1172 SMD Hall smd hall effect sensor AN27701 702 TRANSISTOR smd Allegro Hall-Effect ICs hall 506 ua SMD Hall C AMS-702 AN27703 | |
AN27703Contextual Info: A1172 Micropower Ultra-Sensitive Hall-Effect Switch Description Features and Benefits Micropower operation Operation with either north or south pole— no magnetic orientation required during assembly 1.65 to 3.5 V battery operation Chopper stabilization Superior temperature stability |
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A1172 A1172 AN27703 | |
AN27701
Abstract: AN27703 AMS-702 A1172 Hall-Effect IC Applications Guide
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A1172 AN27701 AN27703 AMS-702 Hall-Effect IC Applications Guide | |
AN27703
Abstract: 702 smd transistor AMS-702
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A1172 AN27703 702 smd transistor AMS-702 | |
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A1171
Abstract: A1171EEWLT-P AMS-702 IPC7351 MO-229
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A1171 A1171 A1171EEWLT-P AMS-702 IPC7351 MO-229 | |
Contextual Info: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low |
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A1171 | |
A1171
Abstract: A1171EEWLT-P AMS-702 IPC7351 w1750
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A1171 A1171 A1171EEWLT-P AMS-702 IPC7351 w1750 | |
Contextual Info: A1171 Micropower Ultrasensitive Hall Effect Switch Description Features and Benefits 1.65 to 3.5 V battery operation Low supply current High sensitivity, BOP typically 30 G 3.0 mT Operation with either north or south pole Configurable unipolar or omnipolar magnetic sensing |
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A1171 A1171 | |
Contextual Info: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low |
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A1171 | |
hall smd 4 pin allegro
Abstract: A1171 A1171EEWLT-P AMS-702 IPC7351 MOSFET Based Chopper
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A1171 A1171 hall smd 4 pin allegro A1171EEWLT-P AMS-702 IPC7351 MOSFET Based Chopper | |
hall smd 4 pin allegro
Abstract: transistor 702 smd power
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A1171 hall smd 4 pin allegro transistor 702 smd power | |
hall smd 4 pin allegro
Abstract: A1171
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A1171 hall smd 4 pin allegro | |
transistor C5080
Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
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3SK228 3SK239A 3SK309 3SK186 3SK295 3SK194 BB101M BB101C 3SK296 2SC2732 transistor C5080 transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965 | |
CPM2C
Abstract: CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110
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RS-232C/Peripheral R301-E3-01 CPM2C CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110 |