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    HS649A

    Abstract: No abstract text available
    Text: PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HS649A █ APPLICATIONS Low Frequancy Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-126 T stg ——Storage Temperature………………………… -55~150℃


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    PDF HS649A O-126 -180V -160V -10mA, -500mA -500mA, -50mA -150mA -160V, HS649A

    transistor 649A

    Abstract: H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 649A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:A117AJ-00 芯片厚度:240±20µm 管芯尺寸:1170x1170µm 2 焊位尺寸:B 极 272×192µm 2;E 极 226×298µm 2


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    PDF 100mm A117AJ-00 2SB649AHS649AH649A O-126TO-126ML -180V -160V transistor 649A H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A

    PCR406

    Abstract: PCR406 equivalent HIT5609 2SA928A equivalent pcr406 2212PA 9601KA 9103N 2sC5200, 2SA1943, 2sc5198 2SC3807 equivalent
    Text: 芯片型号 典型成品型 号 极 性 HFE MIN HFE MAX HFE IC mA HFE VCE(V) VCESAT(V) MAX VCESAT(V) IC(mA) VCESAT(V) IB(mA) 背面金 属 典型封装形 式 2007NA 2N3904 N 0.2 0.625 65 43 6 80 300 10 1 0.2 10 1 金 TO-92 2007PA 2N3906 P 0.2 0.625 45 43


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    PDF 2007NA 2N3904 2007PA 2N3906 2110NA 2SC1815 2110PA 2SA1015 2215NA PCR406 PCR406 equivalent HIT5609 2SA928A equivalent pcr406 2212PA 9601KA 9103N 2sC5200, 2SA1943, 2sc5198 2SC3807 equivalent

    transistor 649A

    Abstract: H649A 649A H649 HS649A 2SB649A transistor 160v 1.5a pnp A080BJ-00
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 649A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:A080BJ-00 芯片厚度:240±20µm 管芯尺寸:800x800µm 2 焊位尺寸:B 极 124×124µm 2;E 极 221×110µm 2


    Original
    PDF 100mm A080BJ-00 2SB649AHS649AH649A O-126TO-126ML -180V -160V transistor 649A H649A 649A H649 HS649A 2SB649A transistor 160v 1.5a pnp A080BJ-00