TRANSISTOR A113 Search Results

TRANSISTOR A113 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR A113 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
F35V Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10010N MRF6V10010NR4 MRF6V10010N F35V	PDF
transistor equivalent table c101 Abstract: KEMET C1206C104K5RACTR CRCW12063301FKEA MRF6V10010N A03TKlc C1206C104K5RACTR Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 0, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10010N MRF6V10010NR4 MRF6V10010N transistor equivalent table c101 KEMET C1206C104K5RACTR CRCW12063301FKEA A03TKlc C1206C104K5RACTR	PDF
N/A9M07 Abstract: No abstract text available Text: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from	Original	AFT09MS007N AFT09MS007NT1 N/A9M07	PDF
atc100B102J Abstract: atc100b102jt50x ATC200B393KT50XT ATC200B223KT50XT MRF6V2010N MRF6V2010NR1 A113 A114 A115 C101 Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with	Original	MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 atc100B102J atc100b102jt50x ATC200B393KT50XT ATC200B223KT50XT MRF6V2010N A113 A114 A115 C101	PDF
1.5SMC27AT3G Abstract: No abstract text available Text: Document Number: MMG1001NT1 Rev. 8, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology	Original	MMG1001NT1 DataMMG1001NT1 1.5SMC27AT3G	PDF
hatching machine Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications	Original	MRF6V2150N MRF6V2150NB MRF6V2150N hatching machine MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF9060N Rev. 13, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9060N MRF9060NR1	PDF
014728 Abstract: A113 A114 A115 AN1955 ML200C MMG3001NT1 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MMG3001NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3001NT1 Broadband High Linearity Amplifier The MMG3001NT1 is a General Purpose Amplifier that is internally	Original	MMG3001NT1/D MMG3001NT1 MMG3001NT1 014728 A113 A114 A115 AN1955 ML200C	PDF
AVX 6295 Abstract: 239 avx ML200C A113 A114 A115 AN1955 MMG3003NT1 A 118827 0805K680JBT Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MMG3003NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally	Original	MMG3003NT1/D MMG3003NT1 MMG3003NT1 AVX 6295 239 avx ML200C A113 A114 A115 AN1955 A 118827 0805K680JBT	PDF
MRF9030N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9030N MRF9030NR1 MRF9030N	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9045N MRF9045NR1	PDF
Untitled Abstract: No abstract text available Text: Document Number: MW6S010 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1	Original	MW6S010 MW6S010NR1/GNR1. MW6S010MR1 MW6S010GMR1 MW6S010MR1	PDF
Untitled Abstract: No abstract text available Text: Document Number: MMG2001NT1 Rev. 6, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology	Original	MMG2001NT1	PDF
M 57733 Abstract: motorola 3053 53368 A113 A114 A115 AN1955 ML200C MMG3002NT1 9972 GP Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMG3002NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier Freescale Semiconductor, Inc. The MMG3002NT1 is a General Purpose Amplifier that is internally	Original	MMG3002NT1/D MMG3002NT1 MMG3002NT1 M 57733 motorola 3053 53368 A113 A114 A115 AN1955 ML200C 9972 GP	PDF

MRF1511 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1511NT1 MRF1511T1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device	Original	MRF1511 MRF1511NT1 MRF1511T1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRFE6S9060N MRFE6S9060NR1	PDF
AN721 Abstract: MRF1513 zener diode z10 A113 AN211A AN215A MRF1513NT1 MRF1513T1 cgs diode Text: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device	Original	MRF1513 MRF1513NT1 MRF1513T1 MRF1513NT1 AN721 MRF1513 zener diode z10 A113 AN211A AN215A MRF1513T1 cgs diode	PDF
MRF1517 Abstract: J104 MOSFET j332 Text: Freescale Semiconductor Technical Data MRF1517 Rev. 2, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFETs MRF1517NT1 MRF1517T1 The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF1517 MRF1517NT1 MRF1517T1 J104 MOSFET j332	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRFG35003M6T1 Rev. 2, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003M6T1 Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in	Original	MRFG35003M6T1 MRFG35003M6T1	PDF
VP0808L-G Abstract: vp0808 Text: VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0808 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing	Original	VP0808 VP0808 DSFP-VP0808 A113007 VP0808L-G	PDF
MRF5S9070NR Abstract: No abstract text available Text: Document Number: MRF5S9070NR1 Rev. 7, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRF5S9070NR1 MRF5S9070NR	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9045NBR1 • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB	Original	MRF9045N MRF9045NBR1	PDF
2743021446 Abstract: "RF power MOSFETs" A113 AN211A AN215A AN721 MRF1517 MRF1517NT1 MRF1517T1 Text: Freescale Semiconductor Technical Data MRF1517 Rev. 2, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFETs MRF1517NT1 MRF1517T1 The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF1517 MRF1517NT1 MRF1517T1 MRF1517 MRF1517NT1 2743021446 "RF power MOSFETs" A113 AN211A AN215A AN721 MRF1517T1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF1518 Rev. 6, 3/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1518NT1 MRF1518T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device	Original	MRF1518 MRF1518NT1 MRF1518T1	PDF

TRANSISTOR A113 Search Results

TRANSISTOR A113 Result Highlights (5)

TRANSISTOR A113 Datasheets Context Search

F35V

transistor equivalent table c101

N/A9M07

atc100B102J

1.5SMC27AT3G

hatching machine

Untitled

014728

AVX 6295

MRF9030N

Untitled

Untitled

Untitled

M 57733

MRF1511

Untitled

AN721

MRF1517

Untitled

VP0808L-G

MRF5S9070NR

Untitled

2743021446

Untitled