TRANSISTOR 8505 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

transistor j02 527

Abstract: S822T S822TRW S822TW marking 822
Contextual Info: S822T/S822TW/S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features

8505N

Contextual Info: National t? S e m i c o n d u c t o r S eptem ber 1996 " A D VA N C E IN FO R M A TIO N N D H 8505N Dual N-Channel Enhancement M ode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancem ent mode power field effect transistors are produced using

lc 945 p transistor

Abstract: transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184
Contextual Info: VfSMAY _ S822T/S822TW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.

lc 945 p transistor

Contextual Info: _ S852T/S852TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

S852T

Abstract: S852TW transistor d 945
Contextual Info: S852T/S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage

Contextual Info: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage

S852T

Abstract: S852TW
Contextual Info: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage

h11e

Abstract: transistor j02 527 S822T
Contextual Info: S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage

Contextual Info: S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage

marking WS2 sot

Contextual Info: Not for new design, this product will be obsoleted soon S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • •

TRANSISTOR w22

Abstract: S822T S822TRW S822TW
Contextual Info: S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • • • 4 Low supply voltage Low current consumption e3

transistor j02 527

Abstract: marking WS2 sot
Contextual Info: S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • • • 4 Low supply voltage Low current consumption e3

Contextual Info: Na l i o n a l s e m i c o n d u i- t o r S e p te m b e r 1 9 9 6 ADVANC E IN FO R M A TIO N N D H 8505N Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description SuperS0T™-8 N-Channel enhancement mode power field effect transistors are produced using

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

Contextual Info: National September 1996 Semiconductor” A D VA N C E IN FO R M A TIO N NDH8505N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancem ent mode power field effect transistors are produced using

TRANSISTOR 85050

Contextual Info: S822T / S822TW / S822TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • 4 Low supply voltage Low current consumption 50 Ω input impedance at 945 MHz

Contextual Info: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max)

TPCP8505

Abstract: BR 8505
Contextual Info: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max)

TPCP8505

Contextual Info: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max)

toshiba ta 8505

Contextual Info: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max)

Contextual Info: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max)