TRANSISTOR 81 110 W 74 Search Results

TRANSISTOR 81 110 W 74 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 81 110 W 74 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
philips ferroxcube 4c6 Abstract: Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703 Text: APPLICATION NOTE A wideband power amplifier 25 − 110 MHz with the MOS transistor BLF245 NCO8602 Philips Semiconductors A wideband power amplifier (25 − 110 MHz) with the MOS transistor BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER	Original	BLF245 NCO8602 SCA57 philips ferroxcube 4c6 Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703	PDF
sot446 Abstract: LWE2010S SC15 SOT446A Text: DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor	Original	LWE2010S SCA53 127147/00/02/pp12 sot446 LWE2010S SC15 SOT446A	PDF
MB4213 Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors	Original	SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD	PDF
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
transistor SMD DK rc Abstract: transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 PINNING - SOT423A FEATURES • Suitable for short and medium pulse applications	Original	BLS2731-110 OT423A SCA57 125108/00/04/pp12 transistor SMD DK rc transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342	PDF
IDG-500 Abstract: BLF244 idg 500 NCO8701 NCO8702 Text: APPLICATION NOTE Performance of 30 W push-pull amplifier for freq. range 25 − 110 MHz with 2 MOS transistors BLF244 NCO8702 Philips Semiconductors Performance of 30 W push-pull amplifier for freq. range 25 − 110 MHz with 2 MOS transistors BLF244 CONTENTS	Original	BLF244 NCO8702 NCO8701 SCA57 IDG-500 BLF244 idg 500 NCO8702	PDF
BFQ235A Abstract: BFQ255A Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D066 BFQ235A NPN video transistor Product specification Supersedes data of 1997 Oct 02 1998 Oct 06 Discrete Semiconductors Product specification NPN video transistor BFQ235A FEATURES DESCRIPTION • High breakdown voltages	Original	M3D066 BFQ235A OT128B O-202) BFQ255A. MGA323 SCA60 125102/00/03/pp8 BFQ235A BFQ255A	PDF
BF588 Abstract: BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF588 PNP high-voltage transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification PNP high-voltage transistor	Original	M3D067 BF588 O-202 MBH792 O-202) SCA52 117041/00/02/pp8 BF588 BP317	PDF
str 6707 Abstract: str 6707 datasheet datasheet str 6707 Q 817 4894 PO 903 rd sot23 marking code 10 sot23 marking code 43 sot23 BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BSS63 PNP high-voltage transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 03 Philips Semiconductors Product specification PNP high-voltage transistor	Original	M3D088 BSS63 BSS64. SCA54 117047/00/02/pp8 str 6707 str 6707 datasheet datasheet str 6707 Q 817 4894 PO 903 rd sot23 marking code 10 sot23 marking code 43 sot23 BP317	PDF
2SC2340 Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e Text: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers	OCR Scan	L427414 r-33-0S NE568 NE56800 2SC2340 transistor BJ 102 131 NE56800 2SC2339 NE56803 NE56853 NE56857 NE56887 ne56853e	PDF
transistor c s z 44 v Abstract: OC36 transistor 27F272 PH2729-110M Text: M a n A M P ic o m p a n y Radar Pulsed Power Transistor, 110W, 100ns Pulse, 10% Duty 2.7-2.9 GHz PH2729-110M V2.00 Features • • • • • • • • NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro a d b an d C lass C O p e ra tio n	OCR Scan	100ns PH2729-110M 500S41W104KP4 ATC100A 73030833-07BOARD 73030837-U transistor c s z 44 v OC36 transistor 27F272 PH2729-110M	PDF
AX1209 Abstract: LF40100M LF40100 Text: A fa tjm m an A M P com pany RF MOSFET Power Transistor, 100W, 40V 500 -1000 MHz Features r.i Gold Metallized • Com m on Source Configuration Input Matched • Push-Pull Resfet Structure • Applications Broadband Linear O peration Lower Capacitances for	OCR Scan	LF40100M AX1209 LF40100M LF40100	PDF

NE243187 Abstract: NE243188 Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The	OCR Scan	NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499	PDF
transistor 81 110 w 63 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •	OCR Scan	MRF581 transistor 81 110 w 63	PDF
AT-60535 Abstract: No abstract text available Text: A V A N T E K INC 20E D AVANTEK • UMlTbb 0QGbS13 T AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 d B typical at 4.0 GHz	OCR Scan	0QGbS13 AT-60535 AT-60535 310-371-8717or310-371-8478	PDF
2272 t4 Abstract: c17 dual mos 1N5347B equivalent MRF177 MRF177 equivalent MRF177M Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RF177 M R F 177M * The RF MOSFET Line RF Power Field Effect Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 100 W, 20 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 400 MHz	OCR Scan	44A-01 RF177 MRF177M MRF177 MRF177M MRF177 P/RM77 2272 t4 c17 dual mos 1N5347B equivalent MRF177 equivalent	PDF
AT60535 Abstract: No abstract text available Text: AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Whpt H E W L E T T mL'tia P a c k a r d Features • • • • • 35 micro-X Package Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.0 dB typical at 2.0 GHz	OCR Scan	AT-60535 AT60535	PDF
2sc2065 Abstract: Low Distortion Amplifiers ne22 TRANSISTOR ne22 NE22100 NE22120 S21E NE221 Text: N E C / 1SE D CALIFORNIA NEC • V b 4a ?414 O D D i a a ? 4 NPN MEDIUM POWER UHF-VHF TRANSISTOR NE22100 NE22120 ABSOLUTE MAXIMUM RATINGS FEATURES SYMBOLS • ULTR A-LINEAR B R O A D -B A N D A M P L IF IE R • LO W D IS T O R T IO N A T H IG H PO W E R PERFORMANCE SPECIFICATIONS	OCR Scan	NE22100 NE22120 NE221 NE22120 100mA--- 2sc2065 Low Distortion Amplifiers ne22 TRANSISTOR ne22 S21E	PDF
Transistor BFr 99 Abstract: No abstract text available Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	Q62702-F1219 OT-23 flE35b05 900MHz Transistor BFr 99	PDF
BF0235 Abstract: BF0235A BF023 Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BF0235A NPN video transistor Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors 1998 Oct 06 PHILIPS Discrete Semiconductors Product specification NPN video transistor BFQ235A FEATURES DESCRIPTION	OCR Scan	BF0235A BFQ235A OT128B O-202) BFQ255A. OT128B; 125102/00/03/pp8 BF0235 BF0235A BF023	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720	PDF
bf433 Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68 Text: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.	OCR Scan	MRF681 bf433 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68	PDF

TRANSISTOR 81 110 W 74 Search Results

TRANSISTOR 81 110 W 74 Result Highlights (5)

TRANSISTOR 81 110 W 74 Datasheets Context Search

philips ferroxcube 4c6

sot446

MB4213

alternator diode 1776 B

oz960

MN1280

transistor SMD DK rc

IDG-500

BFQ235A

BF588

str 6707

2SC2340

transistor c s z 44 v

AX1209

NE243187

transistor 81 110 w 63

AT-60535

2272 t4

AT60535

2sc2065

Transistor BFr 99

BF0235

SVI 3104 c

bf433