TRANSISTOR 610 N Search Results

TRANSISTOR 610 N Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 610 N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor 1877 Abstract: No abstract text available Text: e PTB 20155 9 Watts, 610–960 MHz UHF Power Transistor Description The 20155 is an NPN common base RF power transistor intended for 28 Vdc class C operation from 610 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold	Original	1-877-GOLDMOS 1301-PTB transistor 1877	PDF
bd 142 transistor Abstract: No abstract text available Text: Part Number: Integra ILD0506EL350 TECHNOLOGIES, INC. P-Band RF Power LDMOS Transistor Silicon LDMOS − High Power Gain − Superior thermal stability The high power pulsed transistor part number ILD0506EL350 is designed for P-Band systems operating at 480-610 MHz. Operating at a pulse width of 15ms with	Original	ILD0506EL350 ILD0506EL350 ILD0506EL350-REV-PR1-DS-REV-NC bd 142 transistor	PDF
Liteon PC817 Abstract: cosmo 817 CNY 817 PC123 Triac Liteon 4n33 toshiba PC817 4n33 4n25 datasheet 4N25 CROSS nec pc123 817 cosmo Text: PHOTO COUPLER CROSS REFERENCE Transistor Output - DC Input KODENSHI SHARP PC-17T1 PC-17T2 PC-17T4 FAIRCHILD VISHAY NEC LITEON COSMO H11A817 K817P SFH615A SFH615AA SFH617A PS2501-1 PS2561-1 PS2571-1 LTV-816 LTV-817 -V LTV-819-1 LTV123 LTV-610 K1010 PS2501-2	Original	PC-17T1 PC-17T2 PC-17T4 H11A817 K817P SFH615A SFH615AA SFH617A PS2501-1 PS2561-1 Liteon PC817 cosmo 817 CNY 817 PC123 Triac Liteon 4n33 toshiba PC817 4n33 4n25 datasheet 4N25 CROSS nec pc123 817 cosmo	PDF
Untitled Abstract: No abstract text available Text: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7224 AWB7224	PDF
Untitled Abstract: No abstract text available Text: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7224 AWB7224	PDF
LDJ2H825M03FA062 Abstract: No abstract text available Text: AWB7225 860 - 894 MHz Small-Cell Power Ampliier Module ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7225 AWB7225 LDJ2H825M03FA062	PDF
Untitled Abstract: No abstract text available Text: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7224 AWB7224	PDF
LDJ2H825M03FA062 Abstract: AWB7225 DATE CODE MURATA Hybrid Couplers Text: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7225 AWB7225 LDJ2H825M03FA062 DATE CODE MURATA Hybrid Couplers	PDF
Untitled Abstract: No abstract text available Text: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29.5 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7225 AWB7225	PDF
LDJ2H825M03FA062 Abstract: AWB7225 AWB7225P8 Text: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7225 AWB7225 LDJ2H825M03FA062 AWB7225P8	PDF
LM7805ACZ Abstract: pin configuration of ic LM339 charge battery lm339 TOPSWITCH battery charger LM339 comparator ICS1708 transistor 2N3905 pin configuration TOP243 2N3905 regulator LM219D Text: Galaxy Power, Inc. 2500 Eisenhower Avenue • PO Box 890 • Valley Forge, PA 19482-0890 • Ph: 610 676-0188 •Fax: (610) 676-0189 • www.galaxypower.com Application Note #: AN0020 Device: ICS1708 Description: Sequential Battery Charger for NiCd/NiMH Battery Packs with Thermistors	Original	AN0020 ICS1708 ICS1708 LM7805ACZ pin configuration of ic LM339 charge battery lm339 TOPSWITCH battery charger LM339 comparator transistor 2N3905 pin configuration TOP243 2N3905 regulator LM219D	PDF
HVR-1X 7 diode Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159 Text: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility	Original	O01EC0 TM1061S-L TM1061S-R TM1241S-L TM1241S-R TM1261S-L TM1261S-R TM1641P-L TM1641S-L TM1661P-L HVR-1X 7 diode STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159	PDF
transistor BC 458 Abstract: transistor a42 MO-003 transistor Bc 540 ua109a CERAMIC PIN GRID ARRAY CPGA lead frame transistor bc 577 W144A UA65A CERAMIC QUAD FLATPACK CQFP Text: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and	Original		PDF
PTB20155 Abstract: No abstract text available Text: ERICSSON ^ PTB 20155 9 Watts, 610-960 MHz UHF Power Transistor Description The 20155 is an NPN com m on base RF power transistor intended for 28 Vdc class C operation from 610 to 960 MHz. Rated at 9 watts m inim um ou tput power, it m ay be used fo r both C W and PEP	OCR Scan		PDF

Untitled Abstract: No abstract text available Text: ERICSSON ^ E 20155* 9 Watts, 610-960 MHz UHF Power Transistor Description T he 20 15 5 is a class C, NPN , com m o n base RF po w e r tra n sisto r intended fo r 28 V d c op era tion from 610 to 960 M Hz. Rated at 9 w a tts m inimum output power, it m ay be used for both C W and PEP applications.	OCR Scan		PDF
IFBB Abstract: No abstract text available Text: Philips Semiconductors b b S 3T 31 0 Q 3 Q lb 4 610 M UHF push-pull power MOS transistor a n N AMER PHILIPS/DISCRETE FEATURES APX Product specification BLF547 bH E I PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures	OCR Scan	BLF547 OT262A2 0D30172 MRB022 IFBB	PDF
SD1375 Abstract: No abstract text available Text: Q4C o I S G S -TH O M S O N 7^237 a a a D a i n 4 1 7 * - / / - / ^ _ SOLID STATE MICROWAVE SD1375 THOMSON-CSF COMPONENTS CORPORATION Montgomeryvijle, PA 18936 • 215 362-8500 m TWX 610-661-7299 _ : ^ PNP SILICON SMALL SIGNAL RF TRANSISTOR .357 1 .353 1	OCR Scan	SD1375 SD1375 200mHz 100jUA	PDF
SD1430 Abstract: No abstract text available Text: S G S—THOMSON _ OMCMdJ 7 ^ 5 3 7 OOOOOfc.'i T I /•" T-33-07 SÓLID STATE MICROWAVE SD1430 THOMSON-CSF COMPONENTS CORPORATION ^ > Montgomeryville, P A 18936 • 215 362-8500 ■ TWX 610-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type SD1430 is a 12.5 volt epitaxial silicon NPN planar	OCR Scan	T-33-07 SD1430 SD1430 Hz/12	PDF
Untitled Abstract: No abstract text available Text: HEWLETT-PACKARD/ m CUPNTS blE ]> • 4447564 D0ÜT7Ö3 HEW LETT A T -0 1 610 PACKARD UP to 4 Hz General Purpose Silicon Bipolar Transistor 33b 100 mil Package Features • 22.0 dBm typical Pi dB at 2.0 GHz • 9.5 dB typical Gi dB at 2.0 GHz • • High Gain-Bandwidth Product: 7.0 GHz typical fr	OCR Scan	AT-01610	PDF
Untitled Abstract: No abstract text available Text: Philips Sem iconductors Preliminary specification NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 1 RXB06150W SbE D • 7110fl2b D04bS42 ^ET FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium pulse applications up to	OCR Scan	RXB06150W 7110fl2b D04bS42 FO-91B	PDF
RXB06150W Abstract: FO-91 TRANSISTOR package erie capacitor ERIE ceramic capacitor variable capacitor Text: Philips Sem iconductors Prelim inarjrspecification - i ^ NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 3 3 - / 5 ' 1 RXB06150W _ SbE D • 711DflEb D O H b S 45 ^2T FEATURES DESCRIPTION APPLICATIONS	OCR Scan	RXB06150W FO-91B FO-91 RXB06150W FO-91 TRANSISTOR package erie capacitor ERIE ceramic capacitor variable capacitor	PDF
RZB06050W Abstract: transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476 Text: P h ilip s S e m icon d u ctors Prelim inary sp ecification NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal input prematching networks allow an easier design	OCR Scan	RZB06050W FO-57C 711Dfi2fci T-33-09 RZB06050W transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476	PDF
transistor B42 Abstract: No abstract text available Text: ^ -3 3 - 0 1 Philips Sem iconductors NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal Input prematching networks allow an easier design of circuits	OCR Scan	RZB06050W 711DfiEti 711Dfl2b transistor B42	PDF
Untitled Abstract: No abstract text available Text: PRECISION METAL BULK FOIL TECHNOLOGY • a company V I S H A of Y VISHAY VISH AY MODEL 1417 RESISTORS 12 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with 0.230" pin circle is an alternative layout to Model 1413. Review the 7 technical reasons why you should specify Vishay Bulk	OCR Scan		PDF

TRANSISTOR 610 N Search Results

TRANSISTOR 610 N Result Highlights (5)

TRANSISTOR 610 N Datasheets Context Search

transistor 1877

bd 142 transistor

Liteon PC817

Untitled

Untitled

LDJ2H825M03FA062

Untitled

LDJ2H825M03FA062

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LDJ2H825M03FA062

LM7805ACZ

HVR-1X 7 diode

transistor BC 458

PTB20155

Untitled

IFBB

SD1375

SD1430

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RXB06150W

RZB06050W

transistor B42

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