TRANSISTOR 610 N Search Results

PTB20155

Contextual Info: ERICSSON ^ PTB 20155 9 Watts, 610-960 MHz UHF Power Transistor Description The 20155 is an NPN com m on base RF power transistor intended for 28 Vdc class C operation from 610 to 960 MHz. Rated at 9 watts m inim um ou tput power, it m ay be used fo r both C W and PEP

transistor 1877

Contextual Info: e PTB 20155 9 Watts, 610–960 MHz UHF Power Transistor Description The 20155 is an NPN common base RF power transistor intended for 28 Vdc class C operation from 610 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold

Contextual Info: ERICSSON ^ PTB 201 55 9 Watts, 610 - 960 MHz UHF Power Transistor Preliminary Description Key Features The 20155 is a Class C, NPN, common base RF Power Transistor intended for 28 VDC operation across the 610960 MHz frequency band. It is rated at 9 Watts minimum

bd 142 transistor

Contextual Info: Part Number: Integra ILD0506EL350 TECHNOLOGIES, INC. P-Band RF Power LDMOS Transistor Silicon LDMOS − High Power Gain − Superior thermal stability The high power pulsed transistor part number ILD0506EL350 is designed for P-Band systems operating at 480-610 MHz. Operating at a pulse width of 15ms with

Contextual Info: ERICSSON ^ E 20155* 9 Watts, 610-960 MHz UHF Power Transistor Description T he 20 15 5 is a class C, NPN , com m o n base RF po w e r tra n sisto r intended fo r 28 V d c op era tion from 610 to 960 M Hz. Rated at 9 w a tts m inimum output power, it m ay be used for both C W and PEP applications.

Liteon PC817

Abstract: cosmo 817 CNY 817 PC123 Triac Liteon 4n33 toshiba PC817 4n33 4n25 datasheet 4N25 CROSS nec pc123 817 cosmo
Contextual Info: PHOTO COUPLER CROSS REFERENCE Transistor Output - DC Input KODENSHI SHARP PC-17T1 PC-17T2 PC-17T4 FAIRCHILD VISHAY NEC LITEON COSMO H11A817 K817P SFH615A SFH615AA SFH617A PS2501-1 PS2561-1 PS2571-1 LTV-816 LTV-817 -V LTV-819-1 LTV123 LTV-610 K1010 PS2501-2

IFBB

Contextual Info: Philips Semiconductors b b S 3T 31 0 Q 3 Q lb 4 610 M UHF push-pull power MOS transistor a n N AMER PHILIPS/DISCRETE FEATURES APX Product specification BLF547 bH E I PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

Contextual Info: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

Contextual Info: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

LDJ2H825M03FA062

Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Ampliier Module ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

Contextual Info: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

SD1375

Contextual Info: Q4C o I S G S -TH O M S O N 7^237 a a a D a i n 4 1 7 * - / / - / ^ _ SOLID STATE MICROWAVE SD1375 THOMSON-CSF COMPONENTS CORPORATION Montgomeryvijle, PA 18936 • 215 362-8500 m TWX 610-661-7299 _ : ^ PNP SILICON SMALL SIGNAL RF TRANSISTOR .357 1 .353 1

LDJ2H825M03FA062

Abstract: AWB7225 DATE CODE MURATA Hybrid Couplers
Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29.5 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

SD1430

Contextual Info: S G S—THOMSON _ OMCMdJ 7 ^ 5 3 7 OOOOOfc.'i T I /•" T-33-07 SÓLID STATE MICROWAVE SD1430 THOMSON-CSF COMPONENTS CORPORATION ^ > Montgomeryville, P A 18936 • 215 362-8500 ■ TWX 610-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type SD1430 is a 12.5 volt epitaxial silicon NPN planar

Contextual Info: HEWLETT-PACKARD/ m CUPNTS blE ]> • 4447564 D0ÜT7Ö3 HEW LETT A T -0 1 610 PACKARD UP to 4 Hz General Purpose Silicon Bipolar Transistor 33b 100 mil Package Features • 22.0 dBm typical Pi dB at 2.0 GHz • 9.5 dB typical Gi dB at 2.0 GHz • • High Gain-Bandwidth Product: 7.0 GHz typical fr

LM7805ACZ

Abstract: pin configuration of ic LM339 charge battery lm339 TOPSWITCH battery charger LM339 comparator ICS1708 transistor 2N3905 pin configuration TOP243 2N3905 regulator LM219D
Contextual Info: Galaxy Power, Inc. 2500 Eisenhower Avenue • PO Box 890 • Valley Forge, PA 19482-0890 • Ph: 610 676-0188 •Fax: (610) 676-0189 • www.galaxypower.com Application Note #: AN0020 Device: ICS1708 Description: Sequential Battery Charger for NiCd/NiMH Battery Packs with Thermistors

Contextual Info: Philips Sem iconductors Preliminary specification NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 1 RXB06150W SbE D • 7110fl2b D04bS42 ^ET FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium pulse applications up to

RXB06150W

Abstract: FO-91 TRANSISTOR package erie capacitor ERIE ceramic capacitor variable capacitor
Contextual Info: Philips Sem iconductors Prelim inarjrspecification - i ^ NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 3 3 - / 5 ' 1 RXB06150W _ SbE D • 711DflEb D O H b S 45 ^2T FEATURES DESCRIPTION APPLICATIONS

RZB06050W

Abstract: transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476
Contextual Info: P h ilip s S e m icon d u ctors Prelim inary sp ecification NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal input prematching networks allow an easier design

transistor B42

Contextual Info: ^ -3 3 - 0 1 Philips Sem iconductors NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal Input prematching networks allow an easier design of circuits

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

Contextual Info: PRECISION METAL BULK FOIL TECHNOLOGY • a company V I S H A of Y VISHAY VISH AY MODEL 1417 RESISTORS 12 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with 0.230" pin circle is an alternative layout to Model 1413. Review the 7 technical reasons why you should specify Vishay Bulk

transistor BC 458

Abstract: transistor a42 MO-003 transistor Bc 540 ua109a CERAMIC PIN GRID ARRAY CPGA lead frame transistor bc 577 W144A UA65A CERAMIC QUAD FLATPACK CQFP
Contextual Info: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and