Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 5GHZ PNP Search Results

    TRANSISTOR 5GHZ PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 5GHZ PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking MS

    Abstract: TA-0541 TRANSISTOR PNP 5GHz common base amplifier circuit designing transistor 5ghz pnp 2SA1963 5GHz PNP transistor "marking ms"
    Text: Ordering number:5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features Package Dimensions • Low noise : NF=1.5dB typ f=1GHz . 2 · High gain : | S2le | =9dB typ (f=1GHz). · High cutoff frequency : fT=5GHz typ.


    Original     		PDF 2SA1963 2018B 2SA1963] marking MS TA-0541 TRANSISTOR PNP 5GHz common base amplifier circuit designing transistor 5ghz pnp 2SA1963 5GHz PNP transistor "marking ms"

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    bfr96 equivalent

    Abstract: MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237
    Text: MCE545 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MCE545 is a high breakdown, high gain, discrete PNP silicon bipolar transistor, shipped in waffle pack. ! High Breakdown BVCEO = 70V ! Gold Back Metal


    Original     		PDF MCE545 Symb333 SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA bfr96 equivalent MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237

    stacked transistors SOI RF

    Abstract: TRANSISTOR PNP 5GHz SiGe PNP transistor 5GHz PNP transistor gummel transistor 5ghz pnp complementary npn-pnp RF Bipolar Transistor SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar HJ
    Text: A Complementary Bipolar Technology on SOI Featuring 50GHz NPN and 35GHz PNP Devices for High Performance RF Applications S. Nigrin, M. C. Wilson, S. Thomas, S. Connor and P. H. Osborne Zarlink Semiconductor, Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K.


    Original     		PDF 50GHz 35GHz stacked transistors SOI RF TRANSISTOR PNP 5GHz SiGe PNP transistor 5GHz PNP transistor gummel transistor 5ghz pnp complementary npn-pnp RF Bipolar Transistor SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar HJ

    mce544

    Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630
    Text: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF MC3042 400MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA mce544 bfr96 equivalent Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630

    PNP 2GHz LNA

    Abstract: mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz MC1333 ms1649 MCE545 transistor 5ghz pnp MRF630
    Text: MC1333 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC1333 is a low noise, high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! Low noise-2.5dB@500MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF MC1333 500MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA PNP 2GHz LNA mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz ms1649 MCE545 transistor 5ghz pnp MRF630

    p331 TRANSISTOR

    Abstract: transistor 5ghz pnp Bipolar HJ TRANSISTOR PNP 5GHz high gain PNP RF TRANSISTOR GEC Marconi Materials Technology p349 Schematics 5250 NPN transistor which has frequency greater than 2 pnp 8 transistor array
    Text: A New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices. M C Wilson, P H Osborne, S Thomas and T Cook Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K. Tel: +44 1793 518000, FAX: +44 1793 518351 E-mail: martin_wilson@mitel.com


    Original     		PDF 45GHz 20GHz 30GHz pp164-167, 20ps/G p331 TRANSISTOR transistor 5ghz pnp Bipolar HJ TRANSISTOR PNP 5GHz high gain PNP RF TRANSISTOR GEC Marconi Materials Technology p349 Schematics 5250 NPN transistor which has frequency greater than 2 pnp 8 transistor array

    bfr96 equivalent

    Abstract: MCE544 MC1343 TRANSISTOR PNP 5GHz transistor 5ghz pnp MC1333 Transistor MRF237 MRF544 microsemi MRF237 5GHz PNP transistor
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz


    Original     		PDF MRF544 To-39 Emitter-BasF545 MRF544 MMBR5031LT1/2N5031 MRF581/MRF5812R1/BFR96 400mA 200mA 14dB/200MHz bfr96 equivalent MCE544 MC1343 TRANSISTOR PNP 5GHz transistor 5ghz pnp MC1333 Transistor MRF237 microsemi MRF237 5GHz PNP transistor

    KT 839

    Abstract: 2SA1963 ITR05023 ITR05024 ITR05025 ITR05026 ITR05027 TA-0541 marking MS
    Text: Ordering number:ENN5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequency Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features Package Dimensions • Low noise : NF=1.5dB typ f=1GHz . 2 · High gain : | S2le | =9dB typ (f=1GHz).


    Original     		PDF ENN5230 2SA1963 2018B 2SA1963] KT 839 2SA1963 ITR05023 ITR05024 ITR05025 ITR05026 ITR05027 TA-0541 marking MS

    Motorola transistor smd marking codes

    Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
    Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases


    Original     		PDF OT-89 OT-223 C-120, 2001MD, Motorola transistor smd marking codes SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d

    "Pager receiver"

    Abstract: SL6619
    Text: AN4700 SL6619 Application Set-Up Procedure Application Note AN4700 - 1.1 February 1997 1. Introduction This application note describes the correct set-up procedures and considerations to ensure that optimum performance is achieved when using the SL6619 Direct Conversion FSK Data


    Original     		PDF AN4700 SL6619 AN4700 323MHz. SL6619. "Pager receiver"

    "Pager receiver"

    Abstract: SL6619
    Text: AN4700 SL6619 Application Set-Up Procedure Application Note AN4700 - 1.1 February 1997 1. Introduction This application note describes the correct set-up procedures and considerations to ensure that optimum performance is achieved when using the SL6619 Direct Conversion FSK Data


    Original     		PDF AN4700 SL6619 AN4700 323MHz. SL6619. "Pager receiver"

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    Integrated Synthesizers with Mixers

    Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
    Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services


    Original     		PDF 11F-B, Integrated Synthesizers with Mixers Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    Tpx 56

    Abstract: SL6609A AN200 DS3853 SL6619 2128D 5GHz PNP transistor
    Text: "NOT RECOMMENDED FOR NEW DESIGNS. PLEASE REFER TO SL6619 - DS3853" APPLICATION NOTE AN200 Optimising SL6609A Pager Receiver Performance Supersedes March 1995 version, AN200-1.3 AN200-2.0 August 1998 This application note describes a setup check list which should be used to ensure that the optimum performance is


    Original     		PDF SL6619 DS3853" AN200 SL6609A AN200-1 AN200-2 SL6609A Tpx 56 AN200 DS3853 2128D 5GHz PNP transistor

    Untitled

    Abstract: No abstract text available
    Text: "NOT RECOMMENDED FOR NEW DESIGNS. PLEASE REFER TO SL6619 - DS3853" APPLICATION NOTE AN200 Optimising SL6609A Pager Receiver Performance AN200-2.0 August 1998 This application note describes a setup check list which should be used to ensure that the optimum performance is


    Original     		PDF SL6619 DS3853" AN200 SL6609A AN200-2

    2N2369 avalanche

    Abstract: 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz
    Text: Application Note 122 January 2009 Diode Turn-On Time Induced Failures in Switching Regulators Never Has so Much Trouble Been Had By so Many with so Few Terminals Jim Williams David Beebe Introduction A potential difficulty due to diode turn-on time is that


    Original     		PDF AN122 350ps an122f AN122-19 AN122-20 2N2369 avalanche 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    Tpx 56

    Abstract: AN200 DS3853 SL6609A SL6619 ETC150F
    Text: "NOT RECOMMENDED FOR NEW DESIGNS. PLEASE REFER TO SL6619 - DS3853" APPLICATION NOTE AN200 Optimising SL6609A Pager Receiver Performance AN200-2.0 August 1998 This application note describes a setup check list which should be used to ensure that the optimum performance is


    Original     		PDF SL6619 DS3853" AN200 SL6609A AN200-2 SL6609A Tpx 56 AN200 DS3853 ETC150F

    schmitt trigger used in digital frequency meter

    Abstract: RF9901 RF9902 VCO 5GHz Digital Frequency Doubler 5GHz RF mixer digital frequency meter circuit diagram loop gain of Colpitts VCO design negative phase circuit rf TA0021
    Text: TA0021   TA0021 RF9901, RF9902: An FSK Transmit and Receive Chip Set       The RF9901 and RF9902 are low cost monolithic integrated circuits which can be used separately or together as a two-chip set that provides all the functions necessary to implement a binary FSK transceiver


    Original     		PDF TA0021 RF9901, RF9902: RF9901 RF9902 915MHz 16-lead 400MHz 950MHz schmitt trigger used in digital frequency meter VCO 5GHz Digital Frequency Doubler 5GHz RF mixer digital frequency meter circuit diagram loop gain of Colpitts VCO design negative phase circuit rf TA0021

    lna 2.5 GHZ s parameter ads design

    Abstract: 5Ghz lna transistor Curtice ATF-55143 ATF-54143 ATF55143 BCV62B S402D agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
    Text: Low Noise Amplifiers for 5.125 - 5.325 GHz and 5.725 - 5.825 GHz Using the ATF-55143 Low Noise PHEMT Application Note 1285 Description This paper describes two low noise amplifiers for use in the IEEE 802.11a, ETSI/BRAN HiperLAN/2 5GHz standards. The circuits are designed for use with


    Original     		PDF ATF-55143 ATF55143 o8675 5988-5846EN ECEN4228 ATF-551M4 lna 2.5 GHZ s parameter ads design 5Ghz lna transistor Curtice ATF-54143 BCV62B S402D agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER

    marking MS

    Abstract: rt 0608 2SA1963 TA-0541 5GHz PNP transistor
    Text: Ordering n u m b e r:E N 5230 No.5230 2SA1963 PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications Features • Low noise : NF = 1.5dBtyp f=lGHz . • High gain : I S21e I z= 9dB typ (f= 1GHz). • High cutoff frequency : fr = 5GHz typ.


    OCR Scan     		PDF EN5230 2SA1963 marking MS rt 0608 TA-0541 5GHz PNP transistor