la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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SMD TRANSISTOR MARKING 5c
Abstract: SMD TRANSISTOR MARKING 5c npn smd transistor 5c smd transistor 5c sot-23 5C smd CMBT4124 5c smd transistor transistor 5c smd package
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT4124 = 5C Pin configuration 1 = BASE
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ISO/TS16949
OT-23
CMBT4124
C-120
SMD TRANSISTOR MARKING 5c
SMD TRANSISTOR MARKING 5c npn
smd transistor 5c
smd transistor 5c sot-23
5C smd
CMBT4124
5c smd transistor
transistor 5c smd package
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SMD TRANSISTOR MARKING 5c
Abstract: smd transistor 5c smd transistor 5c sot-23 SMD TRANSISTOR MARKING 5c npn 5C smd transistor 5c smd package CMBT4124 transistor marking SA p sot-23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT4124 = 5C Pin configuration
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OT-23
CMBT4124
C-120
SMD TRANSISTOR MARKING 5c
smd transistor 5c
smd transistor 5c sot-23
SMD TRANSISTOR MARKING 5c npn
5C smd
transistor 5c smd package
CMBT4124
transistor marking SA p sot-23
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marking 5B
Abstract: No abstract text available
Text: BC807 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC807-25 5B BC807-40 5C SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS
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BC807
BC807-25
BC807-40
OT-23
BC817
OT-23
marking 5B
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Untitled
Abstract: No abstract text available
Text: CMBT4124 GENERAL PURPOSE TRANSISTOR N -P -N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M arking CMBT4124 = 5C 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _K02 0.89* 0.60 0.40 2.00_ 1.80 ABSOLUTE MAXIMUM RATINGS
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CMBT4124
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smd transistor 5c sot-23
Abstract: SMD TRANSISTOR MARKING 5c smd transistor 5c ts 4141 TRANSISTOR smd transistor marking SA p sot-23 smd transistor 5c p SMD TRANSISTOR MARKING 5c npn SA sot-23 smd transistor 5c l SMD MARKING 5c npn
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking CMBT4124 = 5C Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS
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OT-23
CMBT4124
C-120
smd transistor 5c sot-23
SMD TRANSISTOR MARKING 5c
smd transistor 5c
ts 4141 TRANSISTOR smd
transistor marking SA p sot-23
smd transistor 5c p
SMD TRANSISTOR MARKING 5c npn
SA sot-23
smd transistor 5c l
SMD MARKING 5c npn
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PH2735
Abstract: No abstract text available
Text: Aß Linear Power Transistor PH2735-5CE 5 Watts, 2.70-3.50 GHz Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB Operation Common Emitter Configuration Internal Input and Output Impedance Matching
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PH2735-5CE
PH2735
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CQ 629
Abstract: No abstract text available
Text: DTC323TS Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm • available in SPT (SC-72)package • in addition to standard features of digital transistor, this transistor has: DTC323TS (SPT) — low collector saturation voltage, typically, VCE(sat) = 40 mV for
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DTC323TS
SC-72
DTC323TS
100-C
CQ 629
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: CRO CL117 NPN SILICON TRANSISTOR TO-92F LEAD FORM to MELF-002 DESCRIPTION CL117 is NPN silicon planar transistor designed for general purpose high voltage and video amplifier application. \ , I 1 1 J 7 * 2 * 0 .3 0 _ // >i í \ l |5C 8fQ tg >| ^ * 2 .04 <01 >
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CL117
CL117
O-92F
MELF-002)
100mA
625mW
20MHz
300//S,
Jul-98
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Untitled
Abstract: No abstract text available
Text: CMBT4124 GENERAL PURPOSE TRANSISTOR N -P-N transistor PACKAGE OU TLINE DETAILS A LL DIM ENSIONS IN mm M arking CMBT4124 = 5C _3,0_ 2.8 0.14 0.09 0.48 038 0.70 0.50 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 11.4 1.2 R0.1 .004 " _1 .02 _
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CMBT4124
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2SC3827
Abstract: marking t54 S2LB
Text: SILICON TRANSISTOR 2SC3827 UHF OSILLATOR NPN SILICON EPITAXIAL TRANSISTOR " M IN I M O L D " DESCRIPTION PACKAGE DIMENSIONS The 2SC3827 is an NPN silicon epitaxial transistor intended fo r use as in m illim e ter* UHF oscillator in a tuner o f a TV receiver.
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2SC3827
2SC3827
marking t54
S2LB
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Siemens 1736
Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
Text: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for
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0235bG5
Q004312
BCY66
Q60203-Y66
TcaseS45Â
fi23Sb05
Q0QM31?
120Hz
Siemens 1736
2sc 1740 TRANSISTOR equivalent
QS 100 NPN Transistor
101S
BCY66
Q60203-Y66
10-lmA
Scans-00145246
Q004312
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Untitled
Abstract: No abstract text available
Text: CMBT4124 GENERAL PURPOSE TRANSISTOR N -P -N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M ark in g CM BT4124 = 5C 3.0 2.8 0.14 0.48 1 0.38 Ii 3 Pin configuration 1 I I1 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02 0.89" 0.60 0.40 2.00 1.80
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CMBT4124
BT4124
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1927 is an NPN silicon epitaxial dual transistor that
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2SC1927
2SC1275,
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power Junction FET advantages and disadvantages
Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor
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ED-19,
5966-3084E
power Junction FET advantages and disadvantages
5257 transistor
thermal conductivity ceramic FET
2T transistor surface mount
microwave fet
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transistor bf 979
Abstract: Q62702-F610 C12B pnp vhf transistor
Text: ^ I 5SE D • . . flE3SbDS 0GG45fl4 T ■ SIEG PIMP Silicon Planar Transistor BF 979 S SIEMENS AK TI EN GES ELL SCH AF 5C 04584 D - BF 97 9 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 50 B 3 DIN 41867 .
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fl235bOS
Q62702-F610
25i02
160ansistion
transistor bf 979
Q62702-F610
C12B
pnp vhf transistor
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2SB0709A
Abstract: 2SB709A 2SD0601A 2SD601A UP04601
Text: Composite Transistors UP04601 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 0.20+0.05 –0.02 (0.30) • Features ■ Basic Part Number of Element 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package (Each transistor is
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UP04601
2SB0709A
2SB709A
2SD0601A
2SD601A
UP04601
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK552-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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BUK552-60A/B
BUK552
T0220ABate1re
BUK552-60A/B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK562-60A Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for
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BUK562-60A
SQT404
BUK562-60A
tina14
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E J> bt.53^31 002A730 253 APX BFS23A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran
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002A730
BFS23A
175MHz
00Bfl73t>
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8ch pnp DARLINGTON TRANSISTOR ARRAY
Abstract: pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
Text: [ 1 ] Product Code Index [ 1 ] Product Code Index 1. IFD Family Tree Inter-Face Driver S-Driver Series TD62Sx×× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type MCT array
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TD62S×
TD62M×
TD62C×
TB62/TD/ULN/ULQ
D62598AP
TD62601P
TD62602P
TD62603P
TD62604P
TD62703P
8ch pnp DARLINGTON TRANSISTOR ARRAY
pnp DARLINGTON TRANSISTOR ARRAY
ULN* PNP transistor array
PNP DARLINGTON SINK DRIVER
pnp darlington array
m54586p
pnp darlington array ULN
uln2803 to drive 7 segment display
ULS2003H
nec pa2003c
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK542-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK542-60A/B
BUK542
-SOT186
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Untitled
Abstract: No abstract text available
Text: CMLT5554 SURFACE MOUNT SILICON DUAL, COMPLEMENTARY HIGH VOLTAGE TRANSISTOR w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR CMLT5554 consists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process
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CMLT5554
2N5551
2N5401
OT-563
100MHz
12-February
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