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    TRANSISTOR 5200 Search Results

    TRANSISTOR 5200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 5200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    18P4G

    Abstract: 20P2N-A M54562FP M54562P pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP


    Original     		PDF M54562P/FP 500mA M54562P M54562FP 500mA) 18P4G 20P2N-A pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit


    Original     		PDF 500mA M54562WP 500mA) Jul-2011

    pnp DARLINGTON TRANSISTOR ARRAY

    Abstract: M54562WP 7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54562WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit


    Original     		PDF M54562WP 500mA M54562WP 500mA) Jul-2011 pnp DARLINGTON TRANSISTOR ARRAY 7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high


    Original     		PDF M54562FP 500mA M54562FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY

    M54562FP

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high


    Original     		PDF M54562FP 500mA M54562FP 500mA)

    pnp 8 transistor array

    Abstract: M54562P pnp darlington array 18P4G 20P2N-A M54562FP PNP DARLINGTON ARRAYS npn 8 transistor array Darlington Transistor Array
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M54562P/FP 500mA M54562P M54562FP 500mA) pnp 8 transistor array pnp darlington array 18P4G 20P2N-A PNP DARLINGTON ARRAYS npn 8 transistor array Darlington Transistor Array

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    BUK9508-55

    Abstract: BUK9608-55
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		PDF OT404 BUK9608-55 BUK9508-55 BUK9608-55

    BUK9508-55

    Abstract: PHB125N06LT 4100us
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		PDF OT404 PHB125N06LT BUK9508-55 PHB125N06LT 4100us

    buk9508

    Abstract: BUK9508-55 BUK9608-55
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		PDF OT404 BUK9608-55 buk9508 BUK9508-55 BUK9608-55

    45118

    Abstract: TRANSISTOR SMD MARKING CODE RG F/45118
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		PDF BUK9608-55 OT404 drT404 BUK9608-55 /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000819\081. \BUK9608-55 45118 TRANSISTOR SMD MARKING CODE RG F/45118

    LTE42005S

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent


    Original     		PDF LTE42005S OT440A LTE42005S

    BUK9508-55

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		PDF O220AB BUK9508-55 BUK9508-55

    d1310

    Abstract: 2SK3061 A2087
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3061 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3061 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3061 Isolated TO-220 designed for high current switching applications.


    Original     		PDF 2SK3061 2SK3061 O-220 O-220) O-220 d1310 A2087

    BUK950

    Abstract: BUK9508-55 BUK9508-55A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		PDF BUK9508-55 O220AB BUK9508-55 /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000819\081. \BUK9508-55 BUK950 BUK9508-55A

    BUK9508-55

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		PDF O220AB BUK9508-55 BUK9508-55

    transistor BUK9508

    Abstract: BUK9508-55 BUK950
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		PDF O220AB BUK9508-55 transistor BUK9508 BUK9508-55 BUK950

    2SK3062

    Abstract: 2SK3062-S 2SK3062-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3062 TO-220AB FEATURES 2SK3062-S TO-262 • Low on-state resistance


    Original     		PDF 2SK3062 O-220AB 2SK3062-S O-262 2SK3062-ZJ O-263 2SK3062 2SK3062-S 2SK3062-ZJ MP-25

    2SK3062

    Abstract: 2SK3062-S 2SK3062-Z 2SK3062-ZJ MP-25 MP-25Z d13101
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ ORDERING INFORMATION DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3062 TO-220AB FEATURES 2SK3062-S TO-262 • Low on-state resistance


    Original     		PDF 2SK3062 2SK3062 O-220AB 2SK3062-S O-262 2SK3062-ZJ O-263 2SK3062-Z O-220SMD 2SK3062-S 2SK3062-Z 2SK3062-ZJ MP-25 MP-25Z d13101

    transistor AHs

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    OCR Scan     		PDF BUK9608-55 transistor AHs

    transistor D 982

    Abstract: gis 110 kv
    Text: Philips Semiconductors Product specification BUK9508-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very


    OCR Scan     		PDF BUK9508-55 T0220AB transistor D 982 gis 110 kv

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK9508-55 T0220AB

    S25 zener diode

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK9508-55 T0220AB IE-02 1E-05 S25 zener diode

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007