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    BUK950 Price and Stock

    Rochester Electronics LLC BUK9509-40B,127

    PFET, 75A I(D), 40V, 0.01OHM, 1-
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    DigiKey BUK9509-40B,127 Tube 683
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    Nexperia BUK9509-40B,127

    MOSFET N-CH 40V 75A TO220AB
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    DigiKey BUK9509-40B,127 Tube
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    Verical BUK9509-40B,127 4,566 11
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    Arrow Electronics BUK9509-40B,127 4,566 1
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    NXP Semiconductors BUK9509-55A,127

    MOSFET N-CH 55V 75A TO220AB
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    DigiKey BUK9509-55A,127 Tube
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    Nexperia BUK9507-30B,127

    MOSFET N-CH 30V 75A TO220AB
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    DigiKey BUK9507-30B,127 Tube
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    Chip1Stop BUK9507-30B,127 Tube 72
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    Rochester Electronics LLC BUK9507-30B,127

    PFET, 75A I(D), 30V, 0.009OHM, 1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUK9507-30B,127 Tube 761
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    Find more BUK950 price and stock on Findchips.com

    BUK950 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK9504-40A NXP Semiconductors N-channel TrenchMOS logic level FET Original PDF
    BUK9504-40A Philips Semiconductors Original PDF
    BUK9504-40A,127 NXP Semiconductors BUK9504-40 - TRANSISTOR 75 A, 40 V, 0.0059 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power Original PDF
    BUK9504-40A,127 NXP Semiconductors TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 56 nC; RDS(on): 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 40 V; Package: SOT78 (TO-220AB); Container: Tube pack Original PDF
    BUK9505-30A NXP Semiconductors BUK9505-30 - TRANSISTOR 75 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power Original PDF
    BUK9505-30A Philips Semiconductors TrenchMOS transistor Logic level FET Original PDF
    BUK9505-30A,127 NXP Semiconductors TrenchMOS transistor Logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 4.6@10V5@5V5.4@4.5V mOhm; Thermal Resistance: 0.65 K/W; VDSmax: 30 V; Package: week 1, 2005 Original PDF
    BUK9505-30A,127 NXP Semiconductors BUK9505-30 - TRANSISTOR 75 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power Original PDF
    BUK9506-30 Philips Semiconductors TrenchMOS Transistor Logic Level FET Original PDF
    BUK9506-40B Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK9506-40B,127 NXP Semiconductors TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 17 nC; RDS(on): 5@10V6.4@5V7.1@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 40 V; Package: SOT78 (TO-220AB); Container: Tube pack Original PDF
    BUK9506-40B,127 NXP Semiconductors BUK9506-40 - TRANSISTOR 75 A, 40 V, 0.0071 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power Original PDF
    BUK9506-55A Philips Semiconductors TrenchMOS Logic Level FET Original PDF
    BUK9506-55A Philips Semiconductors TrenchMOS transistor Logic level FET Original PDF
    BUK9506-55A Philips Semiconductors TrenchMOS transistor Logic level FET Original PDF
    BUK9506-55A,127 Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 75A TO220AB Original PDF
    BUK9506-55B Philips Semiconductors TrenchMOS Logic Level FET Original PDF
    BUK9506-55B Philips Semiconductors N-channel Trenchmos Logic Level Fet Original PDF
    BUK9506-55B,127 NXP Semiconductors N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 22 nC; RDS(on): 5.4@10V6.0@5V6.4@4.5V mOhm; Thermal Resistance: 0.58 K/W; VDSmax: 55 V; Package: SOT78 (TO-220AB); Container: Tube pack Original PDF
    BUK9506-55B,127 NXP Semiconductors BUK9506-55 - TRANSISTOR 75 A, 55 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power Original PDF

    BUK950 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUK95

    Abstract: BUK9506-40B
    Text: TO -22 0A B BUK9506-40B N-channel TrenchMOS logic level FET Rev. 02 — 25 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9506-40B BUK95 BUK9506-40B

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9507-30B N-channel TrenchMOS logic level FET Rev. 02 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9507-30B

    BUK9509-75A

    Abstract: No abstract text available
    Text: BUK9509-75A N-channel TrenchMOS logic level FET Rev. 03 — 22 September 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9509-75A BUK9509-75A

    transistor BUK9508

    Abstract: BUK9508-55B BUK95
    Text: BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9508-55B transistor BUK9508 BUK9508-55B BUK95

    BUK9507-30B

    Abstract: BUK950730B buk9507 BUK95
    Text: TO -22 0A B BUK9507-30B N-channel TrenchMOS logic level FET Rev. 02 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9507-30B BUK9507-30B BUK950730B buk9507 BUK95

    BUK9506-75B

    Abstract: BUK95
    Text: TO -22 0A B BUK9506-75B N-channel TrenchMOS logic level FET Rev. 03 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9506-75B BUK9506-75B BUK95

    Untitled

    Abstract: No abstract text available
    Text: BUK9509-75A N-channel TrenchMOS logic level FET Rev. 03 — 22 September 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9509-75A BUK9509-75A

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9506-40B N-channel TrenchMOS logic level FET Rev. 02 — 25 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9506-40B

    Untitled

    Abstract: No abstract text available
    Text: BUK9509-40B N-channel TrenchMOS logic level FET Rev. 02 — 14 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9509-40B

    BUK95

    Abstract: BUK9506-55B 55B4
    Text: BUK9506-55B N-channel TrenchMOS FET Rev. 04 — 23 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate


    Original     		PDF BUK9506-55B BUK95 BUK9506-55B 55B4

    BUK9505-30A

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9505-30A N-channel TrenchMOS logic level FET Rev. 3 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9505-30A BUK9505-30A

    Untitled

    Abstract: No abstract text available
    Text: BUK9506-55B N-channel TrenchMOS FET Rev. 04 — 23 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate


    Original     		PDF BUK9506-55B

    BUK9506-75B

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9506-75B N-channel TrenchMOS logic level FET Rev. 03 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9506-75B BUK9506-75B

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9505-30A N-channel TrenchMOS logic level FET Rev. 3 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9505-30A

    Untitled

    Abstract: No abstract text available
    Text: BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9508-55B

    BUK9E06-55A

    Abstract: BUK9606-55A
    Text: BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS logic level FET Rev. 03 — 23 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.


    Original     		PDF BUK9506-55A; BUK9606-55A; BUK9E06-55A BUK9506-55A O-220AB) BUK9606-55A OT404 BUK9E06-55A OT226 OT404,

    Untitled

    Abstract: No abstract text available
    Text: BUK9509-75A; BUK9609-75A TrenchMOS logic level FET Rev. 02 — 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.


    Original     		PDF BUK9509-75A; BUK9609-75A BUK9509-75A O-220AB) BUK9609-75A OT404 OT404,

    BUK95

    Abstract: BUK9509-40B
    Text: BUK9509-40B N-channel TrenchMOS logic level FET Rev. 02 — 14 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9509-40B BUK95 BUK9509-40B

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9504-40A N-channel TrenchMOS logic level FET Rev. 2 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9504-40A

    BUK9E06-55A

    Abstract: No abstract text available
    Text: BUK9E06-55A N-channel TrenchMOS logic level FET Rev. 04 — 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9E06-55A BUK9E06-55A

    TRANSISTOR BUK9508

    Abstract: BUK9508-55A BUK9608-55A transistor smd 412 BE
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK9508-55A BUK9608-55A O220AB TRANSISTOR BUK9508 BUK9508-55A BUK9608-55A transistor smd 412 BE

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    D 795 A

    Abstract: No abstract text available
    Text: BUK95/96/9E06-55B TrenchMOS logic level FET Rev. 02 — 10 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low


    Original     		PDF BUK95/96/9E06-55B BUK9506-55B O-220AB) BUK9606-55B OT404 BUK9E06-55B OT226 D 795 A

    transistor D 982

    Abstract: gis 110 kv
    Text: Philips Semiconductors Product specification BUK9508-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very


    OCR Scan     		PDF BUK9508-55 T0220AB transistor D 982 gis 110 kv