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    TRANSISTOR 500V 0.5A Search Results

    TRANSISTOR 500V 0.5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 500V 0.5A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2550

    Abstract: NPN DARLINGTON 10A 500V 50W 400V 10A NPN transistor
    Text: NTE2550 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V


    Original     		PDF NTE2550 NTE2550 NPN DARLINGTON 10A 500V 50W 400V 10A NPN transistor

    TO220 HEATSINK DATASHEET

    Abstract: 2SC3832
    Text: 2SC3832 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose •Absolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) 2SC3832 Unit ICBO VCB=500V


    Original     		PDF 2SC3832 MT-25 100max 400min 10typ 50typ Pulse14) TO220 HEATSINK DATASHEET 2SC3832

    Untitled

    Abstract: No abstract text available
    Text: 2SC3832 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose •Absolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) (Ta=25°C) Unit ICBO VCB=500V


    Original     		PDF 2SC3832 Pulse14) 100max 400min 10typ 50typ MT-25

    vbe 10v, vce 500v NPN Transistor

    Abstract: vce 500v NPN Transistor 2SC2658 2sc265 IC Designs npn transistor vceo 800v
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2658 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications.


    Original     		PDF 2SC2658 vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor 2SC2658 2sc265 IC Designs npn transistor vceo 800v

    Untitled

    Abstract: No abstract text available
    Text: TSC10 Preliminary High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 500V BVCBO 980V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram  High Voltage  High Speed Switching Structure 


    Original     		PDF TSC10 TSC10CT

    1.5A NPN power transistor TO-92

    Abstract: vbe 10v, vce 500v NPN Transistor
    Text: TSC10 Preliminary High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 500V BVCBO 980V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram ● High Voltage ● High Speed Switching Structure


    Original     		PDF TSC10 TSC10CT 1.5A NPN power transistor TO-92 vbe 10v, vce 500v NPN Transistor

    2SC5130

    Abstract: FM20
    Text: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Ratings Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2


    Original     		PDF 2SC5130 100max 10max 400min Pulse10) 20typ 30typ O220F) 2SC5130 FM20

    Untitled

    Abstract: No abstract text available
    Text: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 400 V VEBO 10 V 5(Pulse10) A IC Conditions Ratings Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30


    Original     		PDF 2SC4073 Pulse10) O220F) 100max 400min 10typ 30typ

    2SC5130

    Abstract: FM20
    Text: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 2SC5130 Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2


    Original     		PDF 2SC5130 100max 10max 400min Pulse10) 20typ 30typ O220F) 2SC5130 FM20

    2SC4073

    Abstract: FM20 SE-05
    Text: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor V ICBO VCEO 400 V VEBO 10 V 5(Pulse10) A IC Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30 IB 2


    Original     		PDF 2SC4073 Pulse10) 100max 400min 10typ 30typ O220F) 2SC4073 FM20 SE-05

    ATV-18

    Abstract: 2SC4140
    Text: 2SC4140 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO V 18(Pulse36) A hFE IC=25mA 400min VCE=4V, IC=10A 10 to 30 6 A VCE(sat) IC=10A, IB=2A


    Original     		PDF 2SC4140 MT-100 100max Pulse36) 400min 10typ 165typ ATV-18 2SC4140

    2SC3991

    Abstract: ITR06157 ITR06158 ITR06159 ITR06160 ic24a
    Text: Ordering number:ENN2836 NPN Triple Diffused Planar Silicon Transistor 2SC3991 500V/50A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf=0.1 s typ . · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2836 2SC3991 00V/50A 2048B 2SC3991] 2SC3991 ITR06157 ITR06158 ITR06159 ITR06160 ic24a

    2SC4140

    Abstract: ATV-18 vbe 10v, vce 500v NPN Transistor 110MP
    Text: 2SC4140 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 18(Pulse36) A hFE VCE=4V, IC=10A 10 to 30 6 A VCE(sat) IC=10A, IB=2A


    Original     		PDF 2SC4140 MT-100 100max 400min Pulse36) 10typ 165typ 2SC4140 ATV-18 vbe 10v, vce 500v NPN Transistor 110MP

    2SC3991

    Abstract: ITR06157 ITR06158 ITR06159 ITR06160 ic26a
    Text: Ordering number:ENN2836 NPN Triple Diffused Planar Silicon Transistor 2SC3991 500V/50A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf=0.1µs typ . · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2836 2SC3991 00V/50A 2048B 2SC3991] 2SC3991 ITR06157 ITR06158 ITR06159 ITR06160 ic26a

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R3K0CE DataSheet Rev.2.0 Final Industrial&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R3K0CE,IPU50R3K0CE 1Description DPAK


    Original     		PDF IPx50R3K0CE IPD50R3K0CE, IPU50R3K0CE

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    TO-205AD

    Abstract: TO-39 CASE 2N5010
    Text: 2N5010 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. General purpose power transistor for


    Original     		PDF 2N5010 O-205AD) TO-205AD TO-39 CASE 2N5010

    68w Transistor smd

    Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H
    Text: Willow Technologies Relay Selector 2002 Signal / Telecommunications Electromechanical HG4100 HG4516 HG4507 HG4078B SGR46G 1C/O 2C/O 1C/O 1C/O Switching Current 1A 2A 2A 5A Switching Voltage 125VAC / 60VDC 125VAC / 150VDC Breaking Capacity 62.5VA / 30W 50VA / 30W


    Original     		PDF HG4100 HG4516 HG4507 HG4078B SGR46G 125VAC 60VDC 150VDC 24VDC 68w Transistor smd bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H

    Untitled

    Abstract: No abstract text available
    Text: 1 of 7 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 ISM200, 300, 400, 500: Hybrid Optocouplers Circuit and Package Description Absolute Maximum Ratings


    Original     		PDF ISM200, ISM400 ISM200 ISM300 ISM400 ISM500 ISM20I 100mA 100ohm

    Untitled

    Abstract: No abstract text available
    Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and


    Original     		PDF BUL54A-TO5 O-205AA)

    transistor VCEO 1000V

    Abstract: NPN Transistor VCEO 1000V BUL54A-TO5 LE17
    Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and


    Original     		PDF BUL54A-TO5 O-205AA) transistor VCEO 1000V NPN Transistor VCEO 1000V BUL54A-TO5 LE17

    CT7605

    Abstract: vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor
    Text: WESTCODE SEMICONDUCTORS 1TE D ìto tiss G D G ain 1 r - S 3 -is-. Technical Publication WESTCODE SEMICONDUCTORS CT7605 Issue 3 . July 1985 NPN POWER TRANSISTOR CT7605 I K \ Ratings POWERSWITCH 600 VOLTS 250 AM PERES Fast Switching V CEV 600V V CEO SUS 500V


    OCR Scan     		PDF CT7605 545kgf 100kgf 47nux 100mA lc200A CT7605 vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    NPN Transistor 15A 400V to3

    Abstract: 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 SDT13301-SDTI3305 transistor 500v 0.5a transistor npn 10mhz 500v S65C
    Text: ^/òlitron [^ ©tSDCT ©ÄTTÄIL Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available


    OCR Scan     		PDF 305mm) JAN2N6546, 2N6547. 2N6561, 2N6563, SDT13301-SDTI3305 NPN Transistor 15A 400V to3 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 transistor 500v 0.5a transistor npn 10mhz 500v S65C