2SC5169
Abstract: low noise transistor table
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5169 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SCS169 is a silicon NPN epitaxial type transistor. It Is designed for Unit:mm OUTLINE DRAWING
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2SC5169
2SCS169
100mVtyp
X10-3
2SC5169
low noise transistor table
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SPMICONDUCTOR INC 14E S MPSA62 D | 7^4115 00073b? 3 J PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: V ces=20V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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00073b?
MPSA62
625mW
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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csc4115bc
Abstract: CSC4115
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL
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CSC4115
25deg
C-120
csc4115bc
CSC4115
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL
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CSC4115
25deg
C-120
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pt 4115
Abstract: transistor k 4110 411e UNR4111 UNR4112 UNR4113 UNR4114 UNR4115 UNR4116 UNR4117
Text: Transistors with built-in Resistor UNR4111/4112/4113/4114/4115/4116/4117/ 4118/4119/4110/411D/411E/411F/411H/411L UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor Unit: mm 2.0±0.2 (0.8)
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UNR4111/4112/4113/4114/4115/4116/4117/
4118/4119/4110/411D/411E/411F/411H/411L
N4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L)
UNR4111
UNR4112
UNR4113
UNR4114
UNR4115
UNR4116
pt 4115
transistor k 4110
411e
UNR4111
UNR4112
UNR4113
UNR4114
UNR4115
UNR4116
UNR4117
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pt 4115
Abstract: transistor k 4110 4113 4114 D 4110 UNR4111 UNR4112 UNR4113 UNR4114 UNR4115
Text: Transistors with built-in Resistor UNR4111/4112/4113/4114/4115/4116/4117/ 4118/4119/4110/411D/411E/411F/411H/411L UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor Unit: mm 3.0±0.2 4.0±0.2
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UNR4111/4112/4113/4114/4115/4116/4117/
4118/4119/4110/411D/411E/411F/411H/411L
N4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L)
UNR4111
UNR4112
UNR4113
UNR4114
UNR4115
UNR4116
pt 4115
transistor k 4110
4113
4114
D 4110
UNR4111
UNR4112
UNR4113
UNR4114
UNR4115
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pt 4115
Abstract: transistor k 4110 UN4112 UN4113 UN4110 UN4111 UN4114 UN4115 UN4116 UN4117
Text: Transistors with built-in Resistor UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 3.0±0.2 4.0±0.2 • Features ● ● ● ● ● ● ● ● ● ● ●
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N4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L
UN4111
UN4112
UN4113
UN4114
UN4115
UN4116
UN4117
UN4118
pt 4115
transistor k 4110
UN4112
UN4113
UN4110
UN4111
UN4114
UN4115
UN4116
UN4117
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MARKING W1 AD
Abstract: transistor BC 153
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
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CSC4115
25deg
C-120
MARKING W1 AD
transistor BC 153
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2SC4115
Abstract: 2SA1585 4115S 4115
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR NPN SOT-89 FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585
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OT-89
2SC4115
OT-89
2SA1585
100MHz
4115Q
4115R
4115S
2SC4115
2SA1585
4115S
4115
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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diode zener c25
Abstract: IGBT FF 300
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MMG05N60D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a built-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in
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OT223)
MMG05N60D
318E-04
0E-05
0E-04
4-T19
diode zener c25
IGBT FF 300
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Untitled
Abstract: No abstract text available
Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143
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320ps
SY10EP51V
SY10EP51V
EP51V
HEP51V
HEP51V
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Untitled
Abstract: No abstract text available
Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143
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320ps
SY10EP51V
EP51V
HEP51V
HEP51V
SY10EP51V
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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2SC4115
Abstract: No abstract text available
Text: 2SC4115 3A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package General Purpose Application 4 Low VCE sat .VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)
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2SC4115
OT-89
2SC4115-Q
2SC4115-R
2SC4115-S
4115Q
4115R
4115S
20-Mar-2012
2SC4115
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SY10EP51V
Abstract: SY10EP51VKI SY10EP51VKITR SY10EP51VZI SY10EP51VZITR
Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V FINAL DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143
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SY10EP51V
320ps
SY10EP51V
EP51V
HEP51V
SY10EP51VKI
SY10EP51VKITR
SY10EP51VZI
SY10EP51VZITR
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Untitled
Abstract: No abstract text available
Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK ECL Pro SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143
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320ps
SY10EP51V
EP51V
HEP51V
HEP51V
SY10EP51V
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SMP30N10
Abstract: No abstract text available
Text: SMP30N10 N-Channel Enhancement Mode Transistor TO-22QAB TOP VIEW PRODUCT SUMMARY V BR DSS (V) rDS(ON) (n) •d (A) 100 0.060 30 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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SMP30N10
O-22QAB
10peration
SMP30N10
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pt 4115
Abstract: UN4112 un411F UN4110 UN4111 UN4113 UNR4110 UNR4111 UNR4112 UNR4113
Text: Transistors with built-in Resistor UNR41XX Series UN41XX Series Silicon PNP epitaxial planar transistor Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 For digital circuits 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Costs can be reduced through downsizing of the equipment and
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UNR41XX
UN41XX
UNR4110
UN4110)
UNR4111
UN4111)
UNR4112
UN4112)
UNR4113
UN4113)
pt 4115
UN4112
un411F
UN4110
UN4111
UN4113
UNR4110
UNR4111
UNR4112
UNR4113
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IRFF9230
Abstract: TA17512
Text: IRFF9230 Data Sheet February 1999 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET File Number 2225.2 Features • -4.0A, -200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF9230
-200V,
-200V
IRFF9230
TA17512
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