TRANSISTOR 400 VOLTS Search Results

MJ423

Abstract: Y300500
Contextual Info: ON Semiconductort MJ423 High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS • High Voltage — • • VCEX = 400 Vdc

Contextual Info: 2729GN-400 Rev 1 2729GN-400 400 Watts - 65 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 2729GN-400 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 11dB gain, 400 Watts

1N4001 transistor free

Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
Contextual Info: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.

BC337 rbe

Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
Contextual Info: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.

MDS400

Contextual Info: MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold

Contextual Info: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The

6DI15S-050

Abstract: 1DI300ZP-120 m114 1di200 6DI20MS-050 M615
Contextual Info: /\°7 —t / W X / Power Devices • v ,:i~ J t' PowerTransistor Modules Power transistor modules with zener diode for snubber circuit Vcso V ceo tc Votts sus Votts Com Amps 300 400 400 300 300 400 400 1DI300MN-050 1DI400MN-050 1DI400MP-050 1DI300MN-120

TPR400

Abstract: max7540
Contextual Info: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The

transistor C128

Abstract: c128 transistor 28c128 C1-28Z transistor c1-28 GHZ TECHNOLOGY C1-28 55FT
Contextual Info: C1-28/C1-28Z 1 Watts - 28 Volts, Class C Defcom 400 MHz GENERAL DESCRIPTION CASE OUTLINE The C1-28 / Z is a COMMON EMITTER transistor capable of providing1 Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This transistor is designed for Class AB or C amplifier applications. It utilizes

transistor s72

Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
Contextual Info: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

transistor TE 901 equivalent

Abstract: transistor TE 901 IGT6D11 IGT6E11
Contextual Info: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

IGT8D21

Abstract: IGT8E21
Contextual Info: csrifBAiMiiisro^ IGT8D21.E21 2CI AMPERES 400, 500 VOLTS EQUIV. FiDS ON = 0.145 i l Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

0105-50

Abstract: Scans-00115685
Contextual Info: 0182998 ACRIAN GENERAL 97D 0 1156 INC 0104-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-400 MHz The 0104-100 balanced transistor is specifically designed for wideband operation from 100-400 MHz. It may be operated Class A, AB or C. Gold metalization and silicon

Motorola AN222A

Abstract: MJ10023 1N4937 sps transistor
Contextual Info: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS 250 WATTS

BU208A equivalent

Abstract: BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ13333  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching

transistor k 4212

Abstract: of transistor C 4212 KS624540 K10-43 k1043 transistor 600 volts 60 amperes powerex ks62 diode S62
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/600 Volts O UTLINE DRAWING Description: The Powerex High-Beta Single Darlington Transistor Modules are high power devices designed for

K105 transistor

Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Contextual Info: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

100MIL

Abstract: FERRITE TOROID Johanson Piston Trimmer indiana general UDR-500 udr 70 F624-19 l44 transistor
Contextual Info: UDR-500 500 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The UDR-500 is an internally matched, COMMON EMITTER transistor capable of providing 500 Watts of pulsed RF output power at sixty microseconds pulse width, two percent duty factor across the band 400-450

MARKING TRANSISTOR T44

Abstract: MPSA44
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT44PT SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Video out to drive color CRT * Other high voltage applications. SOT-23 * NPN High Voltage Transistor .066 1.70 CONSTRUCTION .110 (2.80)

CHT44GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT44GP SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Video out to drive color CRT * Other high voltage applications. SOT-23 * NPN High Voltage Transistor .066 1.70 CONSTRUCTION .110 (2.80)

FERRITE TOROID

Abstract: F624-19 100MIL ferrite L8 FERRITE TOROID Indiana General F684-1 Johanson Dielectrics UDR-450 C144* transistor Johanson Piston Trimmer c16pc
Contextual Info: UDR-450 450 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The UDR-450 is an internally matched, COMMON EMITTER transistor capable of providing 450 Watts of pulsed RF output power at sixty microseconds pulse width, two percent duty factor across the band 400-450

MJ10005 equivalent

Abstract: MJ10005 transistor mj10005 1N4937 MJ10004
Contextual Info: ON Semiconductort MJ10005 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high–voltage,

UMIL10P

Contextual Info: R.3.070799 UMIL10P 10 Watts, 28 Volts, Class AB UHF Communications 100 – 400 MHz CASE OUTLINE 55FU Style 2 GENERAL DESCRIPTION The UMIL10P is a COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in

s75 transistor

Abstract: KS621240 powerex ks62 transistor b 1417
Contextual Info: fOMCREX KS621240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SítlCflB DâTHnCftOn Transistor Module 400 Amperes/1200 Volts O U T L IN E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power