TRANSISTOR 3EM Search Results

transistor 3em

Abstract: marking 3EM sot-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value

transistor marking 3em

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value

voltage regulator sot-89 3v

Abstract: dcdc sot-89 FHD3205 FHD3205E FHD3205P FHD3205Q FHD3205R transistor marking 2a REGULATOR SOT89 30v high power amplifier sot89
Contextual Info: SOT-89 EPITAXIAL SILICON Transistor FHD3205 FEATURES特征 •High current output up to 2A; ·Low saturation voltage; ·Complement to FHB1273; ·NPN EPITAXIAL SILICON TRANSISTOR. Applications应用 ·Audio power amplifier; ·DC-DC converter; ·Voltage regulator.

transistor marking 3em

Abstract: transistor marking code SOT-23 TRANSISTOR K 135 J 50 SOT-23 transistor code PB TRANSISTOR K 135 transistor marking code 3EM SOT-23 marking 3EM sot-23 transistor code PB marking code PC sot-23 3em sot-23
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High transition frequency. z Power dissipation. PC=350mW MMBTH10 Pb Lead-free APPLICATIONS z VHF/UHF Transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code

BD 9222

Abstract: SN7481 SN7484 SN7442 SN5481 WQ 5012 SN7444
Contextual Info: CIRCUIT TYPES SN5481, SN5484, SN7481, SN7484 16-BIT ACTIVE-ELEMENT MEMORIES TTL MSI SN5481/SN7481 CIRCUITS W FLAT PACKAGE TOP VIEW description The 16-bit active-element memory is a m o n o lith ic , high-speed, transistor-transistor-logic (TTL) X4 WRITE

BC546

Abstract: BC547 45V 100mA NPN Transistor bc547 BC548 transistor bc547 BC547 4,5V 100mA NPN Transistor bc547 collector base emitter transistor BC548 of BC547 Transistor Bc547 npn
Contextual Info: BC546 / BC547 / BC548 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC546A 1Collector 2Base 3Emitter

transistor marking 3em

Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc

Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc

BC337

Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25
Contextual Info: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J

BC327

Abstract: BC328 TRANSISTOR BC327-40 BC327 PNP transistor TRANSISTOR pnp BC328 BC327 transistor BC328-16 transistor BC328 bc327 datasheet BC327-25
Contextual Info: BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 2Base 3Emitter J CLASSIFICATION OF hFE 1 A Product-Rank BC327-16

transistor marking 3em

Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Contextual Info: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS

mps 1049

Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS

Contextual Info: 'Is.ii.E.u*y <3Emi- 2ondu.otoT O^ , Dna. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N3847 N-P-N SILICON POWER TRANSISTOR ••btolute maximum ratings at 25*C ease temperature (unless otherwise noted)

2SB1182

Contextual Info: 2SB1182 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage

JB marking transistor

Abstract: transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking
Contextual Info: MMBTH10LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 VHF/UHF Transistors ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo

Contextual Info: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6

transistor marking code 3EM SOT-23

Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps
Contextual Info: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6

marking Specific Device Code Date Code sot-23 4l

Abstract: transistor 3em
Contextual Info: MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor NPN Silicon http://onsemi.com Features • S and NSV Prefixes for Automotive and Other Applications • Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

Contextual Info: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .

2SB1182

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SB1182 TO-251 TO-252-2 TRANSISTOR PNP FEATURES Power dissipation 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2.COLLECTOR Symbol Parameter Value

Contextual Info: International IOR Rectifier PD-9.1585A IRG4PC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ps @ 125°C, VGE = 15V

3DD13001

Contextual Info: 3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE 1 Product-Rank 3DD13001-A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 2SB1182 Plastic-Encapsulate Transistors TRANSISTOR PNP TO-252 FEATURES Power Dissipation 1.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.COLLECTOR Symbol Parameter Value Unit VCBO Collector- Base Voltage

marking 3EM sot-23

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTH10LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current ICM : 0.05