TRANSISTOR 3203 Y Search Results

Contextual Info: FORWARD INTERNAHONAL ELECTRONICS LID . KTA1271 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SIUCON TRANSISTOR HIGH CURRENT APPUCATION FEATURES ♦H igh H fe:H fe= 100-320 * C om plem entary to K TC 3203 ABSOLUTE MAXIMUM RATINGS at Tamb=25°C Characteristic Symbol Rating

3203 NPN

Abstract: 2SD2116 3203 transistor transistor 3203
Contextual Info: Ordering number: EN 3 2 0 3 No. 3203 _ 2SD2116 NPN Epitaxial P lanar Silicon Transistor General Driver Applications F eatu re s • Darlington connection • High DC current gain •Large current capacity, wide ASO A bsolute M axim um R atin g s a t Ta = 25°C

transistor 2sc 3203

Abstract: transistor 3203 2sc3203 transistor 3203 y
Contextual Info: F SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SC 3203 (a p p lic a t io n s U n it in m m •Low F r e q u e n c y P o w e r A m plifiers [ (B-Class P u sh -p u ll, P o - l W ) ■General P u r p o s e Sw itch in g C ir c u its (f e a t u r e s )

transistor 3203

Abstract: AN3203 APP3203 MAX7409 MAX966 3203
Contextual Info: Maxim/Dallas > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS FILTER CIRCUITS ANALOG Keywords: lowpass filter, step response, time-domain response, signal conditioning, switched-capacitor filter, SC filter Apr 26, 2004 APPLICATION NOTE 3203 Lowpass Filter Has Improved Step Response

2SD2116

Contextual Info: Ordering number:EN3203 NPN Epitaxial Planar Silicon Transistor 2SD2116 General Driver Applications Features Package Dimensions • Darlington connection. · High DC current gain. · Large current capacity, wide ASO. unit:mm 2064A [2SD2116] 2.5 1.45 1.0 1.0

2sc3203

Abstract: 2sa1271
Contextual Info: 2SA127I SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS APPLICATIONS • Low F r e q u e n c y P o w e r A m p l if i e r s (B -C lass P u sh -p u ll, P o = l W ) ■ General P u r p o s e S w i t c h i n g C i r c u i t s FEATURES • Excellent h FE v s .

Contextual Info: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.

transistor 3205 equivalent

Abstract: data sw 3205 microwave Duplexer pdc 140m FET 3205 LM3200 LM3202 LM3203 LM3204 LM3205
Contextual Info: Powering RF Power Amplifiers with Magnetic Buck Converters Mathew Jacob Hello and welcome to today’s National Semiconductor Online Seminar. I’m Michelle Miller and I will be your host. Before we begin, I’d like to go over the operation of your seminar

VP3203N3-G

Contextual Info: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2n4405

Abstract: 2n4404 2N4404 MOTOROLA 2n4405 motorola
Contextual Info: MOTOROLA SC XSTRS/R 1EE 0 I F L3b725«4 GüôbMia 'i | T-33-n 2N4404 2N4405 M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage v CEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc Rating Collector Current — Continuous

Contextual Info: NEC NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: f ï = 7 GHz The NE981 series of NPN silicon transistors is designed for microwave amplifiers up to 6 GHz and ultrahigh speed

Contextual Info: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability

SmartDie

Abstract: 240486 Intel486TM PROCESSOR FAMILY 242202
Contextual Info: A PRELIMINARY EMBEDDED ULTRA-LOW POWER Intel486 GX PROCESSOR SmartDie™ Product Specification • Ultra-Low Power Member of the Intel486™ Processor Family — 32-Bit RISC Technology Core — 8-Kbyte Write-Through Cache — Four Internal Write Buffers

tms 3631 an

Abstract: tms 3631 240486 A 2497 50 1084 1 transistor d30 Intel486TM PROCESSOR FAMILY SmartDie
Contextual Info: A PRELIMINARY EMBEDDED ULTRA-LOW POWER Intel486 SX PROCESSOR SmartDie™ Product Specification • Ultra-Low Power Member of the Intel486™ Processor Family — 32-Bit RISC Technology Core — 8-Kbyte Write-Through Cache — Four Internal Write Buffers

Contextual Info: HFA 1120/883 & MAR , 850MHz Current Feedback Amplifier with Offset Adjust juiy 1994 Features Description • This Circuit Is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA1120/883 is a high speed, wideband, fast settling

d 2539 transistor

Abstract: AN541 HA1-2539
Contextual Info: U U HA-2539 HARRIS S E M I C O N D U C T O R 600MHz, Very High Slew Rate Operational Amplifier N o ve m b e r 1996 Features D escription • Very High Slew R a te . 600V/ns • Open Loop

NFS200-7608

Abstract: nfs50 4 pin transistor NFS200 transistor ac 127 EN55022-A S/BIP/SCB345100/B/30/NFN40
Contextual Info: NFS200 SERIES Triple and quad output Recommended for new design-ins • ■ ■ ■ ■ ■ ■ ■ 90VAC to 264VAC universal input Short circuit protection with auto-recovery Power fail detect 12VDC fan connection UL, CSA, VDE and BABT approved Cover and fan assembly

SMD Transistor 1f

Abstract: 10v ZENER DIODE 100w audio amplifier circuit diagram class D 100w audio amplifier pcb 100w mosfet audio amplifier circuit diagram 100W sub amplifier 100w audio amplifier circuit diagram per channel 12v 100w amplifier 12v 100w AUDIO AMPLIFIER CIRCUIT 100w audio amplifier circuit diagram
Contextual Info: ZXCD100MOEVAL 100W CLASS D AUDIO AMPLIFIER EVALUATION BOARD DESCRIPTION FEATURES • Class D architecture The ZXCD100MOEVAL evaluation board is based on the ZXCD1000 Class D audio amplifier solution from Zetex. This board allows the user to evaluate the high

Diode LT 4104

Contextual Info: r r im m TECHNOLOGY LT1083/4/5-5 LT1083/4/5-12 3A, 5A, 7.5A Low Dropout Positive Fixed Regulators F€ATUA€S DCSCRIPTIOn • Three Terminal Fixed 5V and 12V ■ Output Current of 3A, 5A or 7.5A ■ Operates Down to 1V Dropout ■ Guaranteed Dropout Voltage at Multiple Current Levels

sda 3203

Abstract: Tuner ADR SCL SDA SDA 3202 sda 3202 prescaler N6 marking code 27110 SDA3202 SDA3203 3202 flow switch V18 marking
Contextual Info: SIEMENS SDA 3202 1.3 GHz PLL with l2C Bus • Low Current Consumption • Cost-Effective and Space-Saving Design • Message Transmission Via l2C Bus • 4 Software-Controlled Outputs • Prescaler Output Frequency is Free from Interference Radiation Pin Configuration

ic 3202-c

Contextual Info: Tex a s In s t r u m e n t s CD4085B Types Data sheet acquired from Harris S em iconductor S C H S060 CMOS Dual 2-Wide 2-Input AND-OR-INVERT Gate High-Voltage Types 20 V o lt Rating • Noise margin, (over full packagetemperature range): 1 V at V DD = 5 V

Contextual Info: Operational Am plifiers C 3 E I HARRIS UU S E M I C O N D U C T O R HARRIS RCA GE CA3410A, CA3410 INTERSIL M ay 1 9 9 0 Quad BiMOS Operational Amplifiers With M O S F E T Input, Biploar Output Features: A pp lica tio n s: • Internally com pensated m MOSFET Input Stage

TRANSISTOR SUBSTITUTION DATA BOOK 1993

Abstract: TRANSISTOR SUBSTITUTION DATA BOOK 1s4 spice optimized sbox schleicher
Contextual Info: Improving FPGA Performance and Area Using an Adaptive Logic Module Mike Hutton1, Jay Schleicher1, David Lewis2, Bruce Pedersen1, Richard Yuan1, Sinan Kaptanoglu1, Gregg Baeckler1, Boris Ratchev1, Ketan Padalia2, 2 Mark Bourgeault , Andy Lee1, Henry Kim1 and Rahul Saini1

Contextual Info: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 6A, -100V, r[js ON = 0.660£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs