TRANSISTOR 3181 Search Results

TRANSISTOR 3181 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 3181 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SA1765 Abstract: 2sc4454 31812 Text: Ordering number:EN3181A PNP Epitaxial Planar Silicon Transistor 2SA1765 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacitance.	Original	EN3181A 2SA1765 2SC4454. 2SA1765] 2SA1765 2sc4454 31812	PDF
2SA1765 Abstract: 2SC4454 ITR04515 ITR04516 ITR04517 ITR04518 Text: Ordering number:ENN3181A PNP Epitaxial Planar Silicon Transistor 2SA1765 High-Speed Switching Applications Features Package Dimensions unit:mm 2033A [2SA1765] 2.2 4.0 3.0 • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product.	Original	ENN3181A 2SA1765 2SA1765] 2SC4454. 2SA1765 2SC4454 ITR04515 ITR04516 ITR04517 ITR04518	PDF
transistor c 3181 Abstract: ZTX457 200V 100MA NPN DSA003767 Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX457 ISSUE 2 MARCH 1994 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage	Original	ZTX457 100mA, 20MHz transistor c 3181 ZTX457 200V 100MA NPN DSA003767	PDF
transistor c 3181 Abstract: c1251 MARK 1N transistor 3181 Text: MMBTA14 PZTA14 C C E C B TO-92 B SOT-23 E SOT-223 Mark: 1N B E C MPSA14 / MMBTA14 / PZTA14 MPSA14 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.	Original	MPSA14 MMBTA14 PZTA14 MPSA14 MMBTA14 OT-23 OT-223 OT-223 transistor c 3181 c1251 MARK 1N transistor 3181	PDF
ph 4148 zener diode Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS	Original	DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148	PDF
Untitled Abstract: No abstract text available Text: ASSMANN Transistor-Fassungen E le ctro n ic C o m p o n e n ts Fassungen fur Leistungstransistoren im Gehause Sockets Transistor-Fassungen Transistor sockets for power-transistors TO-3 „ 010.3 * 40 -3 0 ,2 22.5 - M 3 {2 x R 0,5 •£ 5,08 Art. Nr. Part no.	OCR Scan		PDF
9w cfl circuit Abstract: 2SA1765 2SC4454 Text: Ordering n u m b er:EN 3181A N0.3181A _ 2SA1765 . PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Fast switching speed • Low collector saturation voltage •High gain-bandwidth product ■Small collector capacitance	OCR Scan	2SA1765 2SC4454 9w cfl circuit	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)	OCR Scan	O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346	PDF
Untitled Abstract: No abstract text available Text: Ordering number: EN 3181A _ 2SA1765 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s • Fast switching speed - Low collector saturation voltage • High gain-bandwidth product • Small collector capacitance	OCR Scan	2SA1765 2SC4454 ur200MO/6279MO	PDF
2SA1424 Abstract: No abstract text available Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ DESCRIPTION • PNP COMPLEMENT TO NE327 The NE889 series of PNP silicon transistors is designed for uttrahigh speed current mode switching applications and	OCR Scan	NE327 NE88900 NE88912 NE88933 NE88935 NE889 NE88900) NE88935 IS12I 2SA1424	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 - MARCH 1994_ FEATURES * 300 Volt V,CEO 0.5 A m p continuous current P,o,= 1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage v CBO 300 V	OCR Scan	001G35S	PDF
2SC3544 Abstract: 2sc 792 lt 8232 CT 101 K 104 B 1206 Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and mixer applications. It is suitable for automotive keyless entry	OCR Scan	NE944 2SC3544 2sc 792 lt 8232 CT 101 K 104 B 1206	PDF

2SC3544 Abstract: IC sn 74 ls 2000 Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry	OCR Scan	NE944 IS12I IS12S21I b427525 00L5770 2SC3544 IC sn 74 ls 2000	PDF
23STYLE Abstract: No abstract text available Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION	OCR Scan	NE73435) NE734 NE73400) NE73400 OT-323) OT-23) 23STYLE	PDF
TIS43 Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.	OCR Scan	2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent	PDF
transistor c 3181 Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 -MARCH 1994_ FEATURES * 300 V o lt VCE0 * 0.5 A m p c o n tin u o u s c u rre n t * Pt0.= 1 W a tt ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER VALUE UNIT v CBO 300	OCR Scan	100mA, 20MHz 300ns. transistor c 3181	PDF
5n50 mosfet Abstract: 5n50 transistor 5N50 Text: MOTOROLA MGM5N45 MGM5N50 MGP5N45 MGP5N50 SEM ICONDUCTOR TECHNICAL DATA D esigner’s D ata Sheet 5.0 AMPERE N-CHANNEL TM OS GEM FET N-CHANNEL ENHANCEMENT-MODE SILICON GATE, INSULATED GATE BIPOLAR TRANSISTOR rCE on = 1 6 Ohm 450 and 500 Volts These GEMFETS are designed fo r high voltage, h igh cu rren t	OCR Scan	MGM5N45 MGM5N50 MGP5N45 MGP5N50 MGM5N50 5n50 mosfet 5n50 transistor 5N50	PDF
TIL186 Abstract: No abstract text available Text: TILI 86-1, TILI 86-2, TIL186-3, TIL186 4 AC INPUT OPTOCOUPLERS 0 2 9 8 1 , DECEMBER 1 9 8 6 -R E V IS E D JUNE 198 9 • A-C Signal Input • Choice of Four Current Transfer Ratios • Gallium Arsenide Dual-Diode Infrared Sources Coupled to a Silicon NPN Photo-Transistor	OCR Scan	TIL186-3, TIL186 E65085 aA186	PDF
e981-08 Abstract: 2SC1658 2SC1656 NE98100 NE98108 NE98141 NE981 Text: NEC/ CALIFORNIA SEC SbE D b 4 2 7 4 m 0002525 2Tfl « N E C C NE98100 NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H G AIN B A NDW IDTH PRO DU CT: fr = 7 GHz The NE981 series of NPN silicon transistors is designed for mi	OCR Scan	b4274m NE98100 NE98108 NE98141 NE981 NE98141 chip09 e981-08 2SC1658 2SC1656	PDF
transistor c 3181 Abstract: Transistor z2n a 6151 Text: ASSMANN Transistor Sockets E lectronic C o m p o n e n ts Sockets for power-transistors TO-3 mi n _»a - —l i t . 10.3 „ \P 40 30,2 - \yj M W * jwti 7,3 I « T v *®/ Part no. Contacts Part no. Contacts A 3-G 1 A 3-2? 3 3 A 1 0 -0 1 A 1 0 -Z S 10	OCR Scan		PDF
2N1051 Abstract: 2w105 2w1051 D 1414 transistor Text: M IL -S-19-.00/216A NAVY 28 April 1969 SUPERSED IN G M IL -S-19500/216(NAVY) 9 N o v e m b e r 1 3 1 M ILIT A R Y SPEC IFIC A TIO N SEMICONDUCTOR D EV IC E. TRANSISTOR, NPN, SILIC G n T Y PE 2N1051 « AAAflB 1 o w v n 1.1 Scope. This specification covers the detail requirem ents lo r silicon,	OCR Scan	-19100/216A 2N1051 MIL-STD-750 MDL-S-19500, MIL-8-19500 5961-H179J 2N1051 2w105 2w1051 D 1414 transistor	PDF
BD244C Abstract: D243B transistor c 3181 IC 3180 BD243C D243C Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use In general purpose amplifier and switching applications. • Collector - Emitter Saturation Voltage — VcE sat = 1-5 Vdc (Max) @ lc - 6.0 Adc	OCR Scan	BD243B, BD244B BD243C, BD244C O-220 BD244C D243B transistor c 3181 IC 3180 BD243C D243C	PDF

TRANSISTOR 3181 Search Results

TRANSISTOR 3181 Result Highlights (5)

TRANSISTOR 3181 Datasheets Context Search

2SA1765

2SA1765

transistor c 3181

transistor c 3181

ph 4148 zener diode

Untitled

9w cfl circuit

Transistor 2SA 2SB 2SC 2SD

Untitled

2SA1424

Transistor 2SA 2SB 2SC 2SD

Motorola transistors MRF 947

Untitled

2SC3544

2SC3544

23STYLE

TIS43

transistor c 3181

5n50 mosfet

TIL186

e981-08

transistor c 3181

2N1051

BD244C