TRANSISTOR 3181 Search Results

Contextual Info: ASSMANN Transistor-Fassungen E le ctro n ic C o m p o n e n ts Fassungen fur Leistungstransistoren im Gehause Sockets Transistor-Fassungen Transistor sockets for power-transistors TO-3 „ 010.3 * 40 -3 0 ,2 22.5 - M 3 {2 x R 0,5 •£ 5,08 Art. Nr. Part no.

9w cfl circuit

Abstract: 2SA1765 2SC4454
Contextual Info: Ordering n u m b er:EN 3181A N0.3181A _ 2SA1765 . PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Fast switching speed • Low collector saturation voltage •High gain-bandwidth product ■Small collector capacitance

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

Contextual Info: Ordering number: EN 3181A _ 2SA1765 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s • Fast switching speed - Low collector saturation voltage • High gain-bandwidth product • Small collector capacitance

2SA1765

Abstract: 2sc4454 31812
Contextual Info: Ordering number:EN3181A PNP Epitaxial Planar Silicon Transistor 2SA1765 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacitance.

2SA1424

Contextual Info: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ DESCRIPTION • PNP COMPLEMENT TO NE327 The NE889 series of PNP silicon transistors is designed for uttrahigh speed current mode switching applications and

2SA1765

Abstract: 2SC4454 ITR04515 ITR04516 ITR04517 ITR04518
Contextual Info: Ordering number:ENN3181A PNP Epitaxial Planar Silicon Transistor 2SA1765 High-Speed Switching Applications Features Package Dimensions unit:mm 2033A [2SA1765] 2.2 4.0 3.0 • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product.

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 - MARCH 1994_ FEATURES * 300 Volt V,CEO 0.5 A m p continuous current P,o,= 1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage v CBO 300 V

2SC3544

Abstract: 2sc 792 lt 8232 CT 101 K 104 B 1206
Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and mixer applications. It is suitable for automotive keyless entry

transistor c 3181

Abstract: ZTX457 200V 100MA NPN DSA003767
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX457 ISSUE 2 – MARCH 1994 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

transistor c 3181

Abstract: ML SOT23 TRANSISTOR 3182
Contextual Info: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 - NOVEMBER 1995 FEATURES * High fT=650MHz * * M axim um capacitance 0.7pF Low noise < 5dB at 500MHz PARTMARKING D E T A IL- Ml 3E2 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage

2SC3544

Abstract: IC sn 74 ls 2000
Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry

transistor c 3181

Abstract: c1251 MARK 1N transistor 3181
Contextual Info: MMBTA14 PZTA14 C C E C B TO-92 B SOT-23 E SOT-223 Mark: 1N B E C MPSA14 / MMBTA14 / PZTA14 MPSA14 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

transistor c 3181

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 -MARCH 1994_ FEATURES * 300 V o lt VCE0 * 0.5 A m p c o n tin u o u s c u rre n t * Pt0.= 1 W a tt ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER VALUE UNIT v CBO 300

5n50 mosfet

Abstract: 5n50 transistor 5N50
Contextual Info: MOTOROLA MGM5N45 MGM5N50 MGP5N45 MGP5N50 SEM ICONDUCTOR TECHNICAL DATA D esigner’s D ata Sheet 5.0 AMPERE N-CHANNEL TM OS GEM FET N-CHANNEL ENHANCEMENT-MODE SILICON GATE, INSULATED GATE BIPOLAR TRANSISTOR rCE on = 1 6 Ohm 450 and 500 Volts These GEMFETS are designed fo r high voltage, h igh cu rren t

TIL186

Contextual Info: TILI 86-1, TILI 86-2, TIL186-3, TIL186 4 AC INPUT OPTOCOUPLERS 0 2 9 8 1 , DECEMBER 1 9 8 6 -R E V IS E D JUNE 198 9 • A-C Signal Input • Choice of Four Current Transfer Ratios • Gallium Arsenide Dual-Diode Infrared Sources Coupled to a Silicon NPN Photo-Transistor

e981-08

Abstract: 2SC1658 2SC1656 NE98100 NE98108 NE98141 NE981
Contextual Info: NEC/ CALIFORNIA SEC SbE D b 4 2 7 4 m 0002525 2Tfl « N E C C NE98100 NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H G AIN B A NDW IDTH PRO DU CT: fr = 7 GHz The NE981 series of NPN silicon transistors is designed for mi­

transistor c 3181

Abstract: Transistor z2n a 6151
Contextual Info: ASSMANN Transistor Sockets E lectronic C o m p o n e n ts Sockets for power-transistors TO-3 mi n _»*a - —l i t . *10.3 „ *\P 40 30,2 - \y*j M W * jwti 7,3 I « T v *®/ Part no. Contacts Part no. Contacts A 3-G 1 A 3-2? 3 3 A 1 0 -0 1 A 1 0 -Z S 10

2N1051

Abstract: 2w105 2w1051 D 1414 transistor
Contextual Info: M IL -S-19-.00/216A NAVY 28 April 1969 SUPERSED IN G M IL -S-19500/216(NAVY) 9 N o v e m b e r 1 *3 1 M ILIT A R Y SPEC IFIC A TIO N SEMICONDUCTOR D EV IC E. TRANSISTOR, NPN, SILIC G n T Y PE 2N1051 « AAAflB 1* o w v n 1.1 Scope. This specification covers the detail requirem ents lo r silicon,

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

BD244C

Abstract: D243B transistor c 3181 IC 3180 BD243C D243C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use In general purpose amplifier and switching applications. • Collector - Emitter Saturation Voltage — VcE sat = 1-5 Vdc (Max) @ lc - 6.0 Adc