Untitled
Abstract: No abstract text available
Text: MC100EP40 3.3V / 5V ECL Differential Phase-Frequency Detector Description The MC100EP40 is a three−state phase−frequency detector intended for phase−locked loop applications which require a minimum amount of phase and frequency difference at lock. Advanced design
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MC100EP40
MC100EP40
MC100EP40/D
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Untitled
Abstract: No abstract text available
Text: MC100EP14 3.3V / 5V 1:5 Differential ECL/PECL/HSTL Clock Driver Description The MC100EP14 is a low skew 1−to−5 differential driver, designed with clock distribution in mind, accepting two clock sources into an input multiplexer. The ECL/PECL input signals can be either differential or
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MC100EP14
MC100EP14
LVEP14
MC10EP56/D
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MP1470
Abstract: transistor tip 3005 ITT Intermetall itt capacitor caption ITT ccu 3000 i 65C02 RTD 2482
Text: MICRONAS INTERMETALL CCZ 3005 H Central Control Unit MICRONAS Edition March 13, 1996 6251-412-2DS CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 6 6 8 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34
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6251-412-2DS
MP1470
transistor tip 3005
ITT Intermetall
itt capacitor
caption
ITT ccu 3000 i
65C02
RTD 2482
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KEP65
Abstract: KP65
Text: MC100EP16VB 3.3V / 5V ECL Differential Receiver/Driver with High and Low Gain The EP16VB is a world−class differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with both high and low gain outputs. QHG and QHG outputs have a DC
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MC100EP16VB
EP16VB
LVEP16
shoul00
MC100EP16VB
AND8020
KEP65
KP65
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RS 3005 CL
Abstract: E1 3009 LM119
Text: INCH-POUND MIL-M-38510/103H 18 February 2005 SUPERSEDING MIL-M-38510/103G 03 November 2004 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE COMPARATORS, MONOLITHIC SILICON Reactivated after 18 February 2005 and may be used for either new or existing design acquisition.
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MIL-M-38510/103H
MIL-M-38510/103G
MIL-PRF-38535.
LM106
LM111
LH2111
LM119
LT119A
RS 3005 CL
E1 3009
LM119
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Untitled
Abstract: No abstract text available
Text: MC10EP451, MC100EP451 3.3V / 5V ECL 6-Bit Differential Register with Master Reset Description The MC10/100EP451 is a 6−bit fully differential register with common clock and single−ended Master Reset MR . It is ideal for very high frequency applications where a registered data path is
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MC10EP451,
MC100EP451
MC10/100EP451
MC10EP451/D
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Untitled
Abstract: No abstract text available
Text: MC10EP57, MC100EP57 3.3V / 5V ECL 4:1 Differential Multiplexer Description The MC10/100EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open pulled LOW via the input pulldown resistors the device can also be used as a differential 2:1 multiplexer
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MC10EP57,
MC100EP57
MC10/100EP57
MC10EP57/D
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m 1305
Abstract: Marking D1c MC10EP101 MC10EP101FA MC10EP101FAR2 D1C marking ep101 transistor 3005 2
Text: MC10EP101 Quad 4-Input OR/NOR The MC10EP101 is a Quad 4–input OR/NOR gate. The device is functionally equivalent to the E101. With AC performance faster than the E101 device, the EP101 is ideal for applications requiring the fastest AC performance available. All VCC and VEE pins must be
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MC10EP101
MC10EP101
EP101
250ps
AND8003/D
r14525
MC10EP101/D
m 1305
Marking D1c
MC10EP101FA
MC10EP101FAR2
D1C marking
transistor 3005 2
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103H transistor
Abstract: E1 3007 GDFP1-G10 MIL-M-38510 103H GDFP2-F16 e74 330 diode marking e41 RS 3005 CL LM119
Text: INCH-POUND MIL-M-38510/103H 18 February 2005 SUPERSEDING MIL-M-38510/103G 03 November 2004 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE COMPARATORS, MONOLITHIC SILICON Reactivated after 18 February 2005 and may be used for either new or existing design acquisition.
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MIL-M-38510/103H
MIL-M-38510/103G
MIL-PRF-38535.
part02
LM106
LM111
LH2111
LM119
LT119A
103H transistor
E1 3007
GDFP1-G10
MIL-M-38510 103H
GDFP2-F16
e74 330
diode marking e41
RS 3005 CL
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Untitled
Abstract: No abstract text available
Text: MC10EP29, MC100EP29 3.3V / 5V ECL Dual Differential Data and Clock D Flip-Flop With Set and Reset http://onsemi.com Description The MC10/100EP29 is a dual master−slave flip−flop. The device features fully differential Data and Clock inputs as well as outputs.
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MC10EP29,
MC100EP29
MC10/100EP29
MC10/100EL29.
MC10EP29/D
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c 945 TRANSISTOR equivalent
Abstract: No abstract text available
Text: MC100EP16VC 3.3V / 5V ECL Differential Receiver/Driver with High Gain and Enable Output The EP16VC is a differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with high gain and enable output. The EP16VC provides an EN input which is synchronized with the
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MC100EP16VC
EP16VC
LVEP16
remains00
MC100EP16VC
AND8020
c 945 TRANSISTOR equivalent
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ep57
Abstract: NN 3515 m 1305 MC10EP57 MC10EP57DT MC10EP57DTR2 transistor d1 3005
Text: MC10EP57 4:1 Differential Multiplexer The MC10EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open pulled LOW via the input pulldown resistors the device can also be used as a differential 2:1 multiplexer with SEL0 input selecting between D0 and D1. The fully differential architecture
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MC10EP57
MC10EP57
r14525
MC10EP57/D
ep57
NN 3515
m 1305
MC10EP57DT
MC10EP57DTR2
transistor d1 3005
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Untitled
Abstract: No abstract text available
Text: MC10EP56, MC100EP56 3.3V / 5V ECL Dual Differential 2:1 Multiplexer Description The MC10/100EP56 is a dual, fully differential 2:1 multiplexer. The differential data path makes the device ideal for multiplexing low skew clock or other skew sensitive signals. Multiple VBB pins are
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MC10EP56,
MC100EP56
MC10/100EP56
MC10EP56/D
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MS122123
Abstract: No abstract text available
Text: INCH-POUND MIL-M-38510/109B 28 May 2004 SUPERSEDING MIL-M-38510/109A 18 September 1980 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, PRECISION TIMERS, MONOLITHIC SILICON Reactivated after 28 May 2004 and may be used for either new or existing design acquisitions.
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MIL-M-38510/109B
MIL-M-38510/109A
MIL-PRF-38535.
MS122123
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onsemi transistor 3150
Abstract: MC100EP139 MC100EP139DT MC100EP139DTR2 MC100EP139DW MC100EP139DWR2 kep139
Text: MC100EP139 Product Preview ÷2/4, ÷4/5/6 Clock Generation Chip The MC100EP139 is a low skew ÷2/4, ÷4/5/6 clock generation chip designed explicitly for low skew clock generation applications. The internal dividers are synchronous to each other, therefore, the common
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MC100EP139
MC100EP139
r14153
MC100EP139/D
onsemi transistor 3150
MC100EP139DT
MC100EP139DTR2
MC100EP139DW
MC100EP139DWR2
kep139
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NN 3515
Abstract: EP57 MC100EP57 MC100EP57DT MC10EP57 MC10EP57DT MC10EP57DTR2 transistor d1 3005 100ep57
Text: MC10EP57, MC100EP57 4:1 Differential Multiplexer The MC10/100EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open pulled LOW via the input pulldown resistors the device can also be used as a differential 2:1 multiplexer with SEL0 input selecting between D0 and D1. The fully differential
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MC10EP57,
MC100EP57
MC10/100EP57
r14525
MC10EP57/D
NN 3515
EP57
MC100EP57
MC100EP57DT
MC10EP57
MC10EP57DT
MC10EP57DTR2
transistor d1 3005
100ep57
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transistor 30054
Abstract: transistor 3005 2 acrian RF POWER TRANSISTOR transistor 3005 i 3005-2 transistor 3005-2 transistor b 30054 acrian ic ACRIAN acrian inc
Text: 0182998 ACRIAN GENERAL INC 97D 0 1 4 7 9 3005 DESCRIPTION 5 WATT - 28 VOLTS 3000 MHz The 3005 is a common base transistor capable of providing 5 watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications
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M3002M
Abstract: M3006M transistor 3005 2 L 3005 TRANSISTOR transistor 3005 transistor 3006 3003 BR TRANSISTOR transistor m 3003 g 3006M in 3003 TRANSISTOR
Text: MOTOROLA SC Í X S T R S / R 6367254 FJ "Tb MOTOROLA SC j>F|t,3L,7ES4 00üE35ti S 96D CXSTRS/R F 82356 _ 7" - ¿ - D 33 MM3001 thru MM3003 CASE 79-02, STYLE 1 TO-39 TO-205AD) M A X IM U M RATINGS Sym bol R a tin g C o lle c to r-E m itte r V o lta g e
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E35ti
MM3001
MM3003
O-205AD)
M3002M
M3006M
transistor 3005 2
L 3005 TRANSISTOR
transistor 3005
transistor 3006
3003 BR TRANSISTOR
transistor m 3003 g
3006M
in 3003 TRANSISTOR
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maa 502
Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
Text: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik
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ITT ccu 3000 i
Abstract: No abstract text available
Text: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3.
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6251-412-2DS
4bfl2711
4bfi2711
ITT ccu 3000 i
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40 pins ic used in color television with ir captu
Abstract: semiconductors cross index itt capacitors itt capacitor semiconductors cross reference ITT Intermetall 200H 65C02 K6S6 413027
Text: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3.
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4bfl2711
Palet35
Q00bG4G
40 pins ic used in color television with ir captu
semiconductors cross index
itt capacitors
itt capacitor
semiconductors cross reference
ITT Intermetall
200H
65C02
K6S6
413027
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6216 static ram
Abstract: 6216 ram
Text: 33 HARR'S HM-65642 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which
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HM-65642
HM-65642
80C86
80C88
6216 static ram
6216 ram
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acrian RF POWER TRANSISTOR
Abstract: 3001 transistor ACRIAN K3003 acrian inc AN-3001 transistor m 3003 g
Text: A C R I A N INC t ? deT| oiaa^a DDGm?i o 3001 GENERAL DESCRIPTION The 300.1 is a common base transistor capable of providing 1 watt of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications applications. It uses gold metalization and
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0DD1473
0D01474
acrian RF POWER TRANSISTOR
3001 transistor
ACRIAN
K3003
acrian inc
AN-3001
transistor m 3003 g
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transistor buv 90
Abstract: transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C
Text: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide
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O-220
00V-600V
1000T
2060T
CB-244
CB-285
transistor buv 90
transistor ESM 3004
transistor ESM 16
transistor Buv 48
transistor ESM 30
transistor ESM 3000
transistor ESM
transistor ESM 3001
transistor ESM 3006
transistor buv 46 C
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