TRANSISTOR 2SA107 Search Results

TRANSISTOR 2Sa 1075

Abstract: TRANSISTOR 2Sc 2525 2SA audio POWER TRANSISTORS 2SA transistor 2SA1075 transistor 2SA 2SA POWER TRANSISTORS 2SA1076 TRANSISTOR 2SA1076 2sa tr
Contextual Info: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1075 2SA1076 SILICON PNP RING EMITTER TRANSISTOR RET T h e 2S A 1 0 7 5 /2 S A 1 0 7 6 are silicon PNP general purpose, high power switching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h ­

transistor 2sa 1072

Abstract: "ring emitter" transistor 2SA 2SA audio POWER TRANSISTORS 2SA1072 2SA1073 2SA107 transistors 2SA fujitsu ring emitter transistor 2sc pnp
Contextual Info: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1072 2SA1073 ^ September 1979 SILICON PNP RING EM ITTER TRANSISTOR RET T h e 2 S A 1 0 7 2 /2 S A 1 0 7 3 are silicon PNP general purpose, high p ow er sw itching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h ­

NPN transistor 2527

Abstract: 2SA1077 tf 011
Contextual Info: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1077 Septem ber 1979 SILICON PNP RING EM ITTER TRANSISTOR RET T h e 2 S A 1 0 7 7 is silicon PNP general purpose, high pow er sw itching transistors fab ricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h n o lo g y. R E T

2SA1077

Abstract: AX50
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE 2SA1077 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S A 1 0 7 7 is silicon P NP general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor R E T technology. R E T

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SA1073

Abstract: 2SC2523
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1073 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SC2523 APPLICATIONS

2SC2522

Abstract: 2SA1072
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1072 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -120V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SC2522 APPLICATIONS

2SA1077

Abstract: 2SC2527
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1077 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SC2527 APPLICATIONS

2SC2529

Abstract: 2SA1079
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1079 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2529 APPLICATIONS

2SC2528

Abstract: 2SA1078
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1078 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2528 APPLICATIONS

2SA1073

Abstract: 2SA1072 2sc2523
Contextual Info: cP January 1990 Edition 1.1 - - - FUJITSU PRODUCT PROFILE - 2SA1072, 2SA1072A, 2SA1073 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 are silicon P N P general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transitor RET

Contextual Info: Jeiizu ^£.mi-L.onaiLctoi , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1073 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEo=-160V(Min)

Contextual Info: J.£.ii£tj ^icmi-donauctoi i, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1072 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown vbltageV(BR)CEo=-120V(Min)

Contextual Info: ^zmi-Conductoi U^ioduati, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1078 DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN I.BASE 2.COLLECTOR :V(BR)CEo=-120V(Min.)

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1079 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo=-160V(Min.) • Good Linearity of hFE • Wide Area of Safe Operation

2SA1072

Abstract: 2SA1073 VERO dc-dc power 25CC 2SA1072A 2SA107
Contextual Info: FUJITSU MICROELECTRONICS 31E D E3 374=]7b2 GDlbSOfl □ E1FMI T- 3 3 - 2 . 3 January 1990 Edition 1.1 _ P R O D U C T P R O FILE Fujfrsu 2SA1072, 2SA1072A, 2SA1073 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 are silicon PNP general purpose, high power

2SC2522

Abstract: fujitsu ring emitter 2sc2523 c1507 2SA1073
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2SC2522/2SC2522A/2SC2523 are silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transiter RET

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

transistor 2SB618

Abstract: 3A/fllnm 80
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

transistor DA 3309

Abstract: lc07a 2SC2528 2SA1078 bv 3309 AC 128 pnp transistor
Contextual Info: FUJITSU MICROELECTRONICS 31E D E3 374T7L5 ÜQlt.524 =1 EBFNI cP • January 1990 Edition 1.1 »T H iT n rU J llb U PRODUCTPROFILE: - T * 2SC2528 Silicon High Speed Power Transistor_ DESCRIPTION The 2SC2528 Is a silicon NPN general purpose, medium power transistor fabricated