TRANSISTOR 2A H Search Results

l05a

Abstract: 6k SOT223 marking FZT705
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARUNGTON TRANSISTOR ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * * FAST SWITCHING GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE - FZT605 PART MARKING DETAIL - FZT705 ABSOLUTE MAXIMUM RATINGS. PARAMETER

2SB974

Abstract: 2SD1308 transistor 2A k transistor 2A pnp 2SD130
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -2A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1308

2SC5866

Abstract: 2SA20 2SA2094
Contextual Info: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 zExternal dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)

ZUMT720

Abstract: ZUMT619 DSA003732
Contextual Info: Super323  SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)

MARKING fzt

Abstract: MARKING fzt 605 fzt 605 FZT704 FZT705 DSA003714
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE – FZT 605 PART MARKING DETAIL – FZT705 C E B ABSOLUTE MAXIMUM RATINGS.

FZT705

Abstract: MARKING fzt FZT704 DSA003714
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED hFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE – FZT 604 PART MARKING DETAIL – FZT704 C E B ABSOLUTE MAXIMUM RATINGS.

APL5330

Abstract: 27BSC APL5330KAE-TR APL5330KE-TR STD-020C TRANSISTOR HANDLING 2A step down Voltage Regulator sop8 2a
Contextual Info: APL5330 Dual Input 2A Low Dropout Regulator Features General Description • • The APL5330 integrates a power transistor to provide Fast Transient Response regulated voltage with maximum output current of 2A. High Output Accuracy It also incorporates current-limit, thermal shutdown and

C5875

Abstract: 2SA2087 2SC5875
Contextual Info: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and

transistor

Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
Contextual Info: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

2SD1758

Abstract: 2SB1240 96-217-B24 2SD1055 2SD1919 transistor 257 2SD1227M 2SB1188 2SB911 transistor 2SD1862
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M

pnp npn dual emitter connected

Abstract: ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA
Contextual Info: ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A Description Packaged in the 3mm x 2mm MLP Micro Leaded

MLP832

Abstract: ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a
Contextual Info: ZXTD4591AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 40V; RSAT = 195m ; C = 2.5A VCEO = -40V; RSAT = 350m ; C = -2A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,

Contextual Info: Ordering number: EN 3512B _ 2SA1786/2SC4646 2SA1786:PNP Epitaxial Planar Silicon Transistor 2SC4646:NFN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic = 2A • High breakdown voltage (Vceo = 400V)

2SA1773

Abstract: 2SC4616 300V transistor npn 2a
Contextual Info: 2SA1773 / 2SC4616 Ordering number : EN3399D SANYO Semiconductors DATA SHEET 2SA1773 / 2SC4616 2SA1773 : PNP Epitaxial Planar Silicon Transistor 2SC4616 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • Large current capacity IC=2A .

2SA1786

Abstract: 2SC4646 35123 2SC4646E
Contextual Info: Ordering number:EN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).

NES6294Z

Contextual Info: NES6294Z 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A Monolithic Construction Built in Base Emitter Shunt Resistors

transistor on 4409

Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
Contextual Info: Ordering num ber:EN4409 2SA1830/2SC4734 2SA1830 : PNP Epitaxial Planar Silicon Transistor No.4409 2SC4734 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • Large current capacity Ic = 2A . • High breakdown voltage (Vceo = 400V).

NSG2555

Abstract: TRANSISTOR T4
Contextual Info: NSG2555 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A M onolithic Construction Built in Base Emitter Shunt Resistors

Contextual Info: CM2593 2A Step Down VOLTAGE REGULATOR GENERAL DESCRIPTION FEATURES The CM2593 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring a

Contextual Info: CM2593 2A Step Down VOLTAGE REGULATOR GENERAL DESCRIPTION FEATURES The CM2593 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring a

Contextual Info: HT7465 2A Step-Down DC to DC Converter Feature General Description • Input voltage range: 4.75V to 24V The HT7465 is a 2A high eficiency step-down DCDC converter which includes a fully integrated MOS power transistor. The device uses a current-mode control operating methodology and can operate over a

U2T405

Abstract: t605 U2T305
Contextual Info: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode NPN Darlingtons consist of a two transistor circuit on a single monolithic planar chip. High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A

Contextual Info: DATA SHEET COMPOUND TRANSISTOR HQ1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 2A high current drives such as ICs, motors, and solenoids available • On-chip bias resistor

Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)