Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2731 Search Results

    TRANSISTOR 2731 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2731 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    Untitled

    Abstract: No abstract text available
    Text: 2731-20R1 2731-20 20Watts, 36 Volts, 100us, 10% Radar 2700-3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55KCR-1 Common Base The 2731-20is an internally matched, COMMON BASE bipolar transistor capable of providing 20Watts of pulsed RF output power at 100 pulse width,


    Original     		PDF 2731-20R1 20Watts, 100us, 55KCR-1 2731-20is 20Watts

    j378

    Abstract: duroid 6010 breakdown voltage 2731-100M 100 watts transistor s-band transistor d1 391 J382 transistor frequency 30GHz gain 20 dB
    Text: 2731-100MR1 2731-100M 100 Watts, 36 Volts, 250µs, 10% Radar 2700-3100 MHz CASE OUTLINE 55KS-1 Common Base GENERAL DESCRIPTION The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 250µs pulse


    Original     		PDF 2731-100MR1 2731-100M 55KS-1 2731-100M 2200uF j378 duroid 6010 breakdown voltage 100 watts transistor s-band transistor d1 391 J382 transistor frequency 30GHz gain 20 dB

    2731-100M

    Abstract: 100 watts transistor s-band transistor frequency 30GHz gain 20 dB
    Text: 2731-100MR3 2731-100M 100 Watts, 36 Volts, 200µs, 10% Radar 2700-3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 200µs pulse


    Original     		PDF 2731-100MR3 2731-100M 55KS-1 2731-100M 000pF 100pF 2200uF 25Mil, 100 watts transistor s-band transistor frequency 30GHz gain 20 dB

    2731GN-200M

    Abstract: 2731GN power transistor gan s-band J6 transistor Gan transistor j374
    Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF


    Original     		PDF 2731GN-200M 2731GN 55-QP 2731GN power transistor gan s-band J6 transistor Gan transistor j374

    TRANSISTOR JC 515

    Abstract: No abstract text available
    Text: 2731-115MR1 2731-115M 115 Watts, 36 Volts, 200µs, 10% Radar 2700-3100 MHz Preliminary Data GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 2731-115M is an internally matched, COMMON BASE bipolar transistor capable of providing 115 Watts of pulsed RF output power at 200µs pulse


    Original     		PDF 2731-115MR1 2731-115M 55KS-1 2731-115M TRANSISTOR JC 515

    2731GN

    Abstract: No abstract text available
    Text: 2731GN-110M Rev 1 2731GN – 110M 110 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-110M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 110 Watts of pulsed RF


    Original     		PDF 2731GN-110M 2731GN 55-QP 2731GN

    2731GN

    Abstract: No abstract text available
    Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF


    Original     		PDF 2731GN-200M 2731GN 55-QP 55-QP 2731GN

    B W4 Transistor

    Abstract: transistor hemt TRANSISTOR W2 Stanford Microdevices 4 ghz
    Text: Product Description SMW Series Stanford Microdevices’ SMW Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in thermally-efficient ceramic packages. These HEMT MMICs are fabricated using molecular beam epitaxial growth


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-


    Original     		PDF MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3

    circuit drawing of digital multimeter

    Abstract: transistor 9009 magnetic BUZZER CIRCUIT 12NP135B Buzzer buzzer circuit transistor 2731
    Text: Hy-Q International MAGNETIC BUZZER MODEL 12NP135B 6.3 ±0.2 6.0 ±0.2 5.5 ±0.2 Ø0.6 x 2 + _ 13.7 ±0.3 0.5 ±0.2 Ø12.0 ±0.3 6.5 ±0.3 7.5 ±0.3 RECOMMENDED DRIVING CIRCUIT +V Rated Voltage SIGNAL PNP Transistor RESONANT FREQUENCY, 1/2 DUTY CYCLE, SQUARE WAVE.


    Original     		PDF 12NP135B 10kHz circuit drawing of digital multimeter transistor 9009 magnetic BUZZER CIRCUIT 12NP135B Buzzer buzzer circuit transistor 2731

    UT-141C-50-SP

    Abstract: 141c DVB-T Schematic ATC600S150FT250XT NIPPON CAPACITORS UT-141A-TP COAX AN1955 JESD22-A114 MRF6P3300H
    Text: Document Number: MRF6P3300H Rev. 2, 10/2008 Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. MRF6P3300HR3 MRF6P3300HR5 RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with fre-


    Original     		PDF MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 UT-141C-50-SP 141c DVB-T Schematic ATC600S150FT250XT NIPPON CAPACITORS UT-141A-TP COAX AN1955 JESD22-A114 MRF6P3300H

    MUN2111T1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    OCR Scan     		PDF MUN2111T1 SC-59 MUN2111T1 MUN2114T1 b3b7255 001350b

    UN2115T

    Abstract: transistor 6J U 2113t1 MUN2111T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias R esistor Transistor MUN2111T1 SER IES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M o to rola Preferred D e v ice s This new series of digital transistors is designed to replace a single device and its


    OCR Scan     		PDF SC-59 MUN2111T1 MUN2114T1 UN2115T transistor 6J U 2113t1

    Untitled

    Abstract: No abstract text available
    Text: Product Description SMW Series Stanford M icrodevices’ SM W Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in therm ally-efficient ceram ic packages. These HEMT MMICs are fabricated using m olecular beam epitaxial growth


    OCR Scan     		PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    Untitled

    Abstract: No abstract text available
    Text: Product Description SMW Series Stanford M icrodevices’ SM W Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in therm ally-efficient ceram ic packages. These HEMT MMICs are fabricated using m olecular beam epitaxial growth


    OCR Scan     		PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    RF power amplifier MHz

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak


    OCR Scan     		PDF MRF10500 376B-0erial MRF10150 RF power amplifier MHz

    d2396

    Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
    Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .


    OCR Scan     		PDF 2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    MRF547

    Abstract: MRF549
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP S ilicon High Frequency T ransisto r 1C = -600m A HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP SILICON . . . desig n ed fo r h ig h -cu rre n t, h ig h -fre q u e n cy c o m m o n base a m p lifie rs used in m e diu m


    OCR Scan     		PDF MRF549 -600m MRF547 MRF547 MRF549

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode The M R F 5 0 0 3 is d e s ig n e d fo r b ro a d b a n d c o m m e rc ia l and in d u s tria l a p p lic a tio n s at fre q u e n c ie s to 520 M H z. The high gain and bro a d b a n d


    OCR Scan     		PDF MRF5003 AN215A,