TRANSISTOR 257A Search Results

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BDS12M2A

Abstract: EG marking Q217
Contextual Info: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A • High Voltage • Hermetic TO-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: OM6501ST OM6502ST INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-257AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability

Contextual Info: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A • High Voltage • Hermetic TO-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

transistor 9527

Abstract: 9527 irfy330 tr 9527
Contextual Info: N-CHANNEL POWER MOSFET IRFY330 • BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: N-CHANNEL POWER MOSFET IRFY330 • BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: N-CHANNEL POWER MOSFET IRFY240 / IRFY240M • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Transistor 3-347

Abstract: 3-347
Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M T0-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M T0-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

9528

Contextual Info: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

9522 transistor

Abstract: 9522
Contextual Info: N-CHANNEL POWER MOSFET IRFY240 / IRFY240M • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

9522 transistor

Contextual Info: N-CHANNEL POWER MOSFET IRFY240 • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

OM6502ST

Abstract: OM6501ST
Contextual Info: OM6501ST OM6502ST INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-257AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • Isolated Hermetic Metal Package High Input Impedance Low On-Voltage

2N7085

Contextual Info: 2N7085 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.075 20 TO-257AB Hermetic Package D G Case Isolated S G D S N-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol

2N7091

Contextual Info: 2N7091 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.20 –14 TO-257AB Hermetic Package S G Case Isolated D G D S P-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter

Contextual Info: Tem ic 2N7089 P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Ö ) I d (A) -1 0 0 0.30 -1 0 TO-257AB Herm etic Package O " l! C ase Isolated G D S P-Channel M O S F E T Top View

A2S4735

Contextual Info: Te m ic Siliconix_ 2N7081 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (Q ) Id (A) 100 0.15 13 TO-257AB H erm etic Package D p O Case Isolated G D S N-Channel M OSFET Tbp View Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

2N7091

Contextual Info: ITSiicanix 2N7091 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY -10 0 •d k k.O V BR DSS (A) 0.20 -1 4 1 GATE 2 DRAIN 3 SOURCE Case Isolated 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

2N7092

Contextual Info: 2N7092 CX'SiSconix in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V fDS(ON) <n) (A) -200 0.50 -8.0 V(BR)DSS •d 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

transistor c 4236

Abstract: 2N7082 transistor 257A
Contextual Info: 2N7082 ITSiicaiiix in c o r p o r a te d N-Channel Enhancement Mode Transistor TO -257A B Herm etic Package TOP VIEW o PRODUCT SUMMARY V BR DSS 200 rDS(ON) (n ) (A) •d 0.30 9.0 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

OM6501ST

Contextual Info: OM6501ST OM65Q2ST INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-257AA PACKAGE 500 Volt, 5 A nd 10 A m p , N -C h a n n el IG B T In A H erm e tic M etal P ackag e FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability

transistor C 4231

Abstract: 2N7081
Contextual Info: 2N7081 ffSiBcanix in c o r p o ra te d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TO P VIEW o PRODUCT SUMMARY V BR|DSS 100 rDS(ON •d (Ù ) (A) 0.15 12 1 GATE 2 DRAIN 3 SOURCE 1 2 3 C ase Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

transistor c 4236

Abstract: ic cow 160v 150 N7082 2N7082 EI33
Contextual Info: SILICONIX INC 33E D JïiSSSKSä • 0254735 QOlbOSê 7 « S I X 2N 7082 T ^ -u N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BRJDSS •d (A 200 0.30 9.0 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)