TRANSISTOR 254 ISOLATED NPN Search Results

TRANSISTOR 254 ISOLATED NPN Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

TRANSISTOR 254 ISOLATED NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor 8772 Abstract: 8772 transistor 1470A-6501 8172A 1273a ADAPTER circuit AC TO DC 220V TO 18V 6143a 8712A 8570A 1571A Text: Photoelectric Sensors 70 Series 1 August 2007 PG.05E.19.T.E High Performance Modular Sensors to Solve the Toughest Sensing Problems 70 Series Modular Photoelectric Sensors Contents Overview . . . . . . . . . . . . . . . . . . . . Model Selection, Sensor Heads . . . . . . . . . . . . . . . .	Original	8171B-6501 172A-6501 072A-6501 771A-6501 772A-6501 173A-6507 712A-6501, 713A-6501 730A-6501 transistor 8772 8772 transistor 1470A-6501 8172A 1273a ADAPTER circuit AC TO DC 220V TO 18V 6143a 8712A 8570A 1571A	PDF
1241D-6501 Abstract: 1141D-6501 Cutler-Hammer 1141d-6501 1141D 1420B-6501 transistor 254 isolated npn 1320B Text: Photoelectric Sensors 20 Series 1 August 2007 PG.05E.22.T.E Extremely Rugged Construction, Long Sensing Ranges and High Current Switching 20 Series Photoelectric Sensors Contents Overview. . . . . . . . . . . . . . . . . . . . . . . . Model Selection, Sensors . . . . . . . . .	Original	1141D-6501 1241D-6501 1320B-6501, 1321B-6501, 1410B-6501, 1410B-6502 1420B-6501 Cutler-Hammer 1141d-6501 1141D 1420B-6501 transistor 254 isolated npn 1320B	PDF
Untitled Abstract: No abstract text available Text: NSBC114EF3T5G Series Preferred Devices Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor	Original	NSBC114EF3T5G OT-1123 NSBC114EF3/D	PDF
NSBC114YF3T5G Abstract: No abstract text available Text: NSBC114EF3T5G Series Preferred Devices Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor	Original	NSBC114EF3T5G OT-1123 NSBC114EF3/D NSBC114YF3T5G	PDF
Untitled Abstract: No abstract text available Text: NSBC114EF3T5G Series Preferred Devices Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor	Original	NSBC114EF3T5G NSBC114EF3/D	PDF
SOT-1123 Abstract: NSBC114EF3T5G NSBC114YF3T5G NSBC123TF3T5G NSBC124EF3T5G NSBC143EF3T5G NSBC143ZF3T5G NSBC144EF3T5G transistor marking 1123 Text: NSBC114EF3T5G Series Preferred Devices Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor	Original	NSBC114EF3T5G OT-1123 NSBC114EF3/D SOT-1123 NSBC114YF3T5G NSBC123TF3T5G NSBC124EF3T5G NSBC143EF3T5G NSBC143ZF3T5G NSBC144EF3T5G transistor marking 1123	PDF
current fed push pull topology Abstract: "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors Text: Lighting Power Semiconductor Applications Philips Semiconductors CHAPTER 8 Lighting 8.1 Fluorescent Lamp Control 575 Lighting Power Semiconductor Applications Philips Semiconductors Fluorescent Lamp Control 577 Lighting Power Semiconductor Applications Philips Semiconductors	Original	50/60Hz current fed push pull topology "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors	PDF
Cutler-Hammer 1351b-6511 Abstract: 1450B-6511 1351B-6501 8251 8562B 6150A 1351B 05E-17 Text: Photoelectric Sensors 50 Series 1 August 2007 PG.05E.08.T.E Customize These High Performance Sensors with Interchangeable Outputs and Logic Functions 50 Series Photoelectric Sensors Contents Overview . . . . . . . . . . . . . . . . . . . . . . Model Selection, Sensors . . . . . . . . .	Original	8532B 8562B Cutler-Hammer 1351b-6511 1450B-6511 1351B-6501 8251 6150A 1351B 05E-17	PDF
221D Abstract: AM503 AN875 MJF16002 P6302 pd4016 Text: MOTOROLA SC XSTRS/R 4bE F D • b3b725 4 □0^377S 3 MOTOROLA ■MOTb ^ 3 3 Order this data sheet by MJF16002/D - // ■ SEMICONDUCTOR TECHNICAL DATA M JF16002 Designer's Data Sheet Motorola preferred device NPN Silicon P ow er Transistor S w itc h m o d e S e rie s	OCR Scan	MJF16002/D 80Motorola 2PHX23679C-3 MJF16002/D 221D AM503 AN875 MJF16002 P6302 pd4016	PDF
transistor sc 308 Abstract: mje16 E16204 motorola mj transistors 221A-06 MJE16204 MJF16204 JE-16 F16204 Text: by MJF16204/D MOTOROLA SEMICONDUCTOR b 3 b ? 2 5 4 OCHBMbS M • B 0 T b T S ^ O \| TECHNICAL DATA MOTOROLA SC X STR S/R F 4bE ]> MJF16204 MJE16204 SCANSWITCH NPN Bipolar Pow er Deflection Transistors For High and Very High Resolution M onitors Motorola preferred devicw	OCR Scan	MJF16204 MJE16204 O-220 MJF16204/D 2PHX23912C-2 MJF16204/D transistor sc 308 mje16 E16204 motorola mj transistors 221A-06 JE-16 F16204	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers ana pc monitors.	OCR Scan	BU2523AF	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved	OCR Scan	BU2522DF	PDF
Untitled Abstract: No abstract text available Text: ß Semiconductor LM3045/LM3046/LM3086 Transistor Arrays General Description Features The LM3045, LM3046 and LM3086 each consist of five gen eral purpose silicon NPN transistors on a common mono lithic substrate. Two of the transistors are internally con	OCR Scan	LM3045/LM3046/LM3086 LM3045, LM3046 LM3086 LM3045 14-lead	PDF
Untitled Abstract: No abstract text available Text: DiT\| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.	OCR Scan	MG75H6EL1 Ic-75A) Icm75A) MG75H6EL1-1 MG75H6EL1-4 MG150Q2YK1 MG200Q1UK1 MG75Q2YK1 MG50Q2YK1 10Sec.	PDF

transistor ECG 152 Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041 Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application	OCR Scan	DDD714b ECG36 ECG36MP* ECG37) T48-1 ECG37 ECG37MCP ECG36) ECG36 ECG37 transistor ECG 152 Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041	PDF
MJF16212 Abstract: MJH16212 ferroxcube P3C8 CL099 transistor equivalent 0107 NA 340B-03 Text: MOTOROLA SC XSTRS/R F 4bE D b3b?£S4 ÜO^BMflO b Bin OT b MOTOROLA T '3 3 '0 1 Order this data sheet by MJH16212/D • SEMICONDUCTOR TECHNICAL DATA M JH16212 MJF16212 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution Monitors	OCR Scan	T-33-01 MJH16212/D MJH16212 MJF16212 O-218 C72U8 MJH16212 ferroxcube P3C8 CL099 transistor equivalent 0107 NA 340B-03	PDF
transistor ecg36 Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180 Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo	OCR Scan	DDD714b ECG36 ECG36MP* ECG37) T48-1 ECG37 ECG37MCP ECG36) ECG36 ECG37 transistor ecg36 transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180	PDF
jF18004 Abstract: VA05H uc3842 AL Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18004 M JF18004 Designer's Data Sheet S w itch m o d e M otoroU preferred devlcet NPN Bipolar Pow er Transistor For Sw itching Power Supply A pplications P O W ER TR A N SIST O R 5.0 A M P E R E S 1000 V O LT S	OCR Scan	JF18004 T0-220 T0-220 21A-06 O-220AB TQ-220 VA05H uc3842 AL	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.	OCR Scan	bbS3T31 BLU99 BLU99/SL OT122A) BLU99/SL OT122D)	PDF
BVW10 Abstract: ESM4045AF ESM4045 Text: 3GE D • T'IE'ìaa? DD3GMSD 1 ■ SGS-THOMSON iLItglFIHWÜ_ ESM4045AF ESM4045AV ~ ^ ~ G ~ S ^ T H 0 M S 0 N NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS	OCR Scan	ESM4045AF ESM4045AV T-91-20 O-240) BVW10 ESM4045	PDF
MJF16206 Abstract: MTP12N10 pin configuration MJH16206 transistor D 1557 K1194 MJW16206 MPF930 TMJE210 ci mc7812 MC1391P Text: MOTOROLA SC X S T R S / R F 4bE b3b7254 D 00^3470 3 T -3 2 > -O i IflOTb Order this data sheet by MJF16206/D MOTOROLA •i SEMICONDUCTOR m TECHNICAL DATA MJF16206 MJH16206 MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors	OCR Scan	b3b7254 1-33-OI MJF16206/D MJF16206 MJH16206 AN1040 MJF16206 MJH16206 MJW16206 MTP12N10 pin configuration transistor D 1557 K1194 MPF930 TMJE210 ci mc7812 MC1391P	PDF
s2566 Abstract: No abstract text available Text: NEC HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS2566L-1 -2 -4 FEATURES DESCRIPTION_ • HIGH ISOLATION VOLTAGE BV: 5000 Vr.m.s. • HIGH CURRENT TRANSFER RATIO CTR: 2000% TYP • HIGH SPEED SWITCHING	OCR Scan	PS2566L-1 PS2566-1, S2566L-1, PS2566L-1, PS2566L-1 PS2566L-2 PS2566L-4 s2566	PDF
Untitled Abstract: No abstract text available Text: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS2502 -1 ,-2 ,-4 PS2502L -1,-2, -4 FEATURES_ DESCRIPTION_ • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN • HIGH CURRENT TRANSFER RATIO CTR: 2000% TYP	OCR Scan	PS2502 PS2502L PS2502-1, PS2502L-1, PS25Q2-1,	PDF
SL 100 NPN Transistor Abstract: transistor tt 2222 SL 100 power transistor 43120203664 International Power Sources ferroxcube wideband hf choke Philips 119 Text: P H IL IP S bSE I N T ^ ’-i D O 711002b 00b2fab4 A bCH H P H I N BLT90/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically fo r class-B operation.	OCR Scan	711002b 00b2fab4 BLT90/SL OT-172D) 00b2b70 SL 100 NPN Transistor transistor tt 2222 SL 100 power transistor 43120203664 International Power Sources ferroxcube wideband hf choke Philips 119	PDF

TRANSISTOR 254 ISOLATED NPN Search Results

TRANSISTOR 254 ISOLATED NPN Result Highlights (5)

TRANSISTOR 254 ISOLATED NPN Datasheets Context Search

transistor 8772

1241D-6501

Untitled

NSBC114YF3T5G

Untitled

SOT-1123

current fed push pull topology

Cutler-Hammer 1351b-6511

221D

transistor sc 308

Untitled

Untitled

Untitled

Untitled

transistor ECG 152

MJF16212

transistor ecg36

jF18004

Untitled

BVW10

MJF16206

s2566

Untitled

SL 100 NPN Transistor