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    TRANSISTOR 199 BF Search Results

    TRANSISTOR 199 BF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 199 BF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF199

    Abstract: BF 234 transistor BP317 data bf199 transistor NPN BF199
    Text: 00-07-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-048-21 BF 199 trans DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor


    Original     		PDF M3D186 BF199 SCA55 117047/00/02/pp8 BF199 BF 234 transistor BP317 data bf199 transistor NPN BF199

    transistor BF 199

    Abstract: BF 199 bf199 transistor A11A
    Text: SIEM ENS BF 199 NPN Silicon RF Transistor • For common emitter IF TV amplifier stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 199 - Q62702-F355 Pin Configuration 1 2 3 C E Package1 TO-92 B Maximum Ratings Parameter


    OCR Scan     		PDF Q62702-F355 D0bb74b 23SbGS DDbb747 00bb74fl transistor BF 199 BF 199 bf199 transistor A11A

    bf199

    Abstract: transistor NPN BF199
    Text: BF199 J V_ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 package. The B F 199 has a very low feedback capacitance and is intended fo r use in the ou tp u t stage o f a vision i.f. amplifier. QUICK REFERENCE D ATA Collector-base voltage open emitter


    OCR Scan     		PDF BF199 BF199 transistor NPN BF199

    Untitled

    Abstract: No abstract text available
    Text: BF 199 NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR MICRO EL.ECTRDNICS CASE T0-92E BF199 is an NPN s ilic o n p la n a r e p ita x ia l tr a n s is to r designed f o r RF a m p lifie rs and video IF a m p lifie rs in common e m itte r c o n fig u ra tio n .


    OCR Scan     		PDF T0-92E BF199 300mW 47MHz 35MHz TELEX-43510

    BF199 RF

    Abstract: BF199 HF transistor BF 199 transistor transistor NPN BF199
    Text: BF 199 NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR IVIICR CD ELECTRONICS CASE T0-92E BF199 i s an NPN s il ic o n p la n a r e p ita x ia l t r a n s i s t o r designed f o r KF a m p lifie rs and video IF a m p lifie rs in common e m itte r c o n fig u ra tio n .


    OCR Scan     		PDF BF199 t0-92e 300mW 100MHz 47MHz 35MHz TELEX-43510 BF199 RF HF transistor BF 199 transistor transistor NPN BF199

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code


    OCR Scan     		PDF 900MHz BFP182W Q62702-F1502 OT-343

    Transistor S 40443

    Abstract: C 5478 transistor msc 0645 MSC 1691 AI MSC 1691 Philips FA 291 msc 1699 msc 1697 MCD156 0280 130 085
    Text: ^53^31 Philips Semiconductors IAPX 0024=137 Û00 NPN 7 GHz wideband transistor ^ BFG197; BFG197/X; BFG197/XR N AMER P H I L I P S / D I S C R E T E FEATURES • Product specification b?E D PINNING High power gain PIN • Low noise figure • Gold metallization ensures


    OCR Scan     		PDF BFG197; BFG197/X; BFG197/XR BFG197 BFG197 BFG197/X OT143 Transistor S 40443 C 5478 transistor msc 0645 MSC 1691 AI MSC 1691 Philips FA 291 msc 1699 msc 1697 MCD156 0280 130 085

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bbSBPBl DDBabSb bfiB bTE D Philips Semiconductors Product specification Silicon diffused power transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended


    OCR Scan     		PDF BU2527AF

    bft93

    Abstract: transistor BF 199
    Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF BFT93 BFT93 Q62702-F1063 OT-23 900MHz transistor BF 199

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz RFs 1=E Q62702-F1685 2=C 3=E Package 03 BFP181R II ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz BFP181R Q62702-F1685 OT-143R BFP181R

    BF199 RF

    Abstract: BF199 bF199 transistor transistor NPN BF199 transistor BF 199 transistor BF199 Bf 199 BF 199 transistor
    Text: BF199 NPN Silicon Epitaxial Planar Transistor designed for RF applications; low feedback capacitance, especially suited for em itter-grounded IF stages in TV sets. max. Q5# 1,25 Plastic case ~ JEDEC TO -92 T O -18 compatible The case is impervious to light


    OCR Scan     		PDF BF199 case00 BF199 RF BF199 bF199 transistor transistor NPN BF199 transistor BF 199 transistor BF199 Bf 199 BF 199 transistor

    E 94733

    Abstract: AH-1 SOT23
    Text: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device observe handling precaution!


    OCR Scan     		PDF BFT92 Q62702-F1050 OT-23 900MHz E 94733 AH-1 SOT23

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF 900MHz OT-343 BFP182W Q62702-F1502

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611


    OCR Scan     		PDF Q62702-F1611 OT-143 0535bOS 900MHz fl235b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1314 OT-23 BFR181

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF BFT93 Q62702-F1063 OT-23 235b05 G122211 900MHz 235fc

    1s211

    Abstract: 2I k
    Text: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF Q62702-F1594 OT-143R 900MHz 1S211 2I k

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • f T = 5.5GHz • Gold metalization for high reliability ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-F1575 OT-343 fi235bDS 900MHz fl235b05

    012n3

    Abstract: No abstract text available
    Text: SIEMENS BFP193 NPN Silicon RF Transistor « For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF BFP193 900MHz Q62702-F1282 OT-143 012n3

    TEA 1091

    Abstract: DIODE bfp 86 siemens rs 1091
    Text: SIEMENS SI EGET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1591 OT-343 IS21I2 235LG5 E35bD5 01EEQQ0 TEA 1091 DIODE bfp 86 siemens rs 1091

    D 1398 Transistor

    Abstract: d 1398 BLV98 32Q1 ci 1404
    Text: N AMER PHILIPS/DISCRETE 86D OLE 0 1398 D "d • bfci53Ii31 D013b3b 3 3 - ft A ~~ BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor In SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.


    OCR Scan     		PDF bfci53Ii31 D013b3b BLV98 OT-171 BLV98 D 1398 Transistor d 1398 32Q1 ci 1404

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFP 183R RHs


    OCR Scan     		PDF BFP183R Q62702-F1594 OT-143R 76VBE 900MHz a535fc

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1298 OT-23 D155144 flE35fc D12514S

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA f j = 7GHz • F = 2 .1 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1500 BFP180W OT-343 fl235bOS D1E1B71 23SbG5