TRANSISTOR 1892 Search Results

Contextual Info: 6427525 N E C ELECTRONICS IN C 98D 18922 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK773 DESCRIPTION The 2SK773 is N-channel MOD Field E ffect Power Transistor designed for switching power supplies DC-DC converters. FEATURES • • • PACKAGE DIMENSIONS

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2SK784

Contextual Info: 6427 52 5 N E C ELECTRON ICS INC 98D 18928 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Tfl • t427S2S 3 I _ _ _ 2SK784 DESCRIPTION The 2SK784 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters. FEA TU R ES

2SK773

Abstract: CEE 32A DIODE S45
Contextual Info: 6427525 N E^C ELECTRONICS INC 98D 18922 .4575S5 ÜGIflTEE E D Y - S f 'S S SsSv N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK773 DESCRIPTION The 2SK773 is N-channel MOD Field Effect Power Transistor PACKAGE DIM ENSIONS designed for switching power supplies DC-DC converters.

2SK774

Contextual Info: 6427525 N E C ELECTRONICS as SaSyir.";- FEATU RES 98D 18925 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ~Tfi D ESCRIPTIO N INC D E | b457S2S OQlfl^BS fl 2SK774 The 2SK774 is N-channel MOS Field Effect Power Transistor designed for switching power supplies OC-OC converter.

n10n

Abstract: 2SK784 transistor 2sk784
Contextual Info: 6427525 N E C ELECTRONICS INC 98D 18928 D N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR IB DESCRIPTION FEA TU R ES 2SK784 E | b i 2 ?sas OOlMao 3 I The 2SK784 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters.

IRFF230

Abstract: TB334
Contextual Info: IRFF230 Data Sheet March 1999 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET • 5.5A, 200V Formerly developmental type TA17412. Ordering Information IRFF230 PACKAGE TO-205AF 1892.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2SC1892

Abstract: E JHAA AC42C
Contextual Info: 2/ U D > N P N = « f f i l b « . W h 5 > 2; ^ SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR O * ?- y V o Color TV Horizontal Outp u t A p p l ications • A 2 SC 1892 V CB 0 = 1 5 0 0 V • V cœ eat = 5 V (Typ.) ; -X -í y ; l&ZfcÆfè MAXIMUM RATINGS CHARACTERISTIC

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

Contextual Info: IRFF230 Data Sheet Title FF2 bt 5A, 0V, 00 m, March 1999 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

c102 TRANSISTOR

Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

transistor c735

Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

SMD r801

Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,

Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power ampliier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2SC1871

Abstract: n 1895 1878 TRANSISTOR 2SA893
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: DATA SHEET r NEC S ILIC O N TR A N SISTO R 2SD1699 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD D E S C R IP T IO N T h e 2 S D 1 6 9 9 is N P N silic o n e p ita xia l d a r lin g t o n t r a n sisto r d e sig n e d f o r p uise m o to r, p rin te r d rive r, so le n o id drive r.

dc motor 5v

Abstract: 1RF541 SMP60N06 replacement 74C906 DG303 IRF541 MAX1822 MAX1822ESA MAX333 MAX622
Contextual Info: 19-1892; Rev 0; 1/01 High-Side Power Supply _Features ♦ +3.5V to +16.5V Operating Supply Voltage Range A +3.5V to +16.5V input supply range and a typical quiescent current of only 150µA make the MAX1822 ideal for a wide range of line- and battery-powered switching

dc motor 5v

Abstract: c2pr 74c906 SMP60N06 replacement 1RF541 H-Bridge Motor Driver 2N017
Contextual Info: 19-1892; Rev 0; 1/01 High-Side Power Supply _Features ♦ +3.5V to +16.5V Operating Supply Voltage Range A +3.5V to +16.5V input supply range and a typical quiescent current of only 150µA make the MAX1822 ideal for a wide range of line- and battery-powered switching

1RF541

Contextual Info: 19-1892; Rev 0; 1/01 High-Side Power Supply _Features ♦ +3.5V to +16.5V Operating Supply Voltage Range ♦ Output Voltage Regulated to VCC + 11V typ ♦ 150µA (typ) Quiescent Current ♦ Power-Ready Output A +3.5V to +16.5V input supply range and a typical quiescent current of only 150µA make the MAX1822 ideal

dc motor 5v

Abstract: 1RF541 c2pr MAX333 74c906
Contextual Info: 19-1892; Rev 0; 1/01 High-Side Power Supply _Features ♦ +3.5V to +16.5V Operating Supply Voltage Range A +3.5V to +16.5V input supply range and a typical quiescent current of only 150µA make the MAX1822 ideal for a wide range of line- and battery-powered switching

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS