TRANSISTOR 13W Search Results

TRANSISTOR 13W Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR 13W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3133 NPN EPITAXIAL PLANAR TYPE DISCRIPTION 2SC3133 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in H F band mobile radio applications. FEATURES • High power gain: Gpe > 1 4 d B • @f = 27M H z, V cc = 12V , P0 = 13W	OCR Scan	2SC3133 2SC3133	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
MRF660 Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040	Original	2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet	PDF
Contextual Info: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. Dimension in mm 9.1 ± 0 . 7	OCR Scan	DG17S24 2SC1944 2SC1944 27MHz, 27MHz	PDF
Contextual Info: Part Number: Integra IB2226M80 Preliminary TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2226M80 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.25-2.55 GHz. While operating	Original	IB2226M80 IB2226M80 IB2226M80-REV-PR1-DS-REV-NC	PDF
27mhz rf ic Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30 Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,	OCR Scan	2SC1944 2SC1944 27MHz, T0-220 27MHz 27mhz rf ic T30 transistor 27mhz transistor 27mhz rf amplifier T-30	PDF
2SC3133 Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3133 NPN EPITAXIAL PLANAR TYP E DISCRIPTION 2SC3133 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in HF band mobile radio applications. FEATURES • • • • • High power gain: Gpe > 1 4 d B	OCR Scan	2SC3133 2SC3133 27MHz,	PDF
2SC3133 Abstract: 27mhz rf ic TRANSISTOR 1P 1P H transistor 27mhz transistor RF POWER TRANSISTOR NPN Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC 3133 NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3133 is a silicon NPN ep itaxia l planar type transistor Dimensions i designed fo r RF pow er am plifiers in HF band m obile radio applications. 9.1 ± 0 . 7	OCR Scan	2SC3133 2SC3133 27mhz rf ic TRANSISTOR 1P 1P H transistor 27mhz transistor RF POWER TRANSISTOR NPN	PDF
Contextual Info: L BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor M arking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLIN E DETAILS A LL DIM ENSIONS IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 • COLLECTOR	OCR Scan	BCW66F, BCW66G BCW66H 180put	PDF
2SC2783 Abstract: VC-80 Series uhf 13W amplifier Contextual Info: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 UHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm 1R4±Q5 Output Power : Po = 40W Min. (f = 470MHz, V e e = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL	OCR Scan	2SC2783 470MHz, 2-13C1A 470MHz 961001EAA2' 2SC2783 VC-80 Series uhf 13W amplifier	PDF
2sc2783 Contextual Info: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. ia4±a5 Output Power : Po = 40W Min. (f=470MHz, V cc = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC2783 470MHz, 2-13C1A 961001EAA2' 2sc2783	PDF
Contextual Info: T O SH IB A 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 78 3 UHF BAND POWER AMPLIFIER APPLICATIONS • U n it in mm 1 8 .4 ± Q 5 Output Power : Po = 40W Min. (f= 470MHz, VCC = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC	OCR Scan	2SC2783 470MHz, 2-13C1A	PDF

TACAN transistor Contextual Info: MS2209 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION Features • · · · · REFRACTORY/GOLD METALIZATION LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY EMITTER SITE BALLASTED DESCRIPTION: THE MS2209 AVIONICS POWER TRANSISTOR IS A BROADBAND,	Original	MS2209 MS2209 100ns 10msec, TACAN transistor	PDF
Contextual Info: PD - 95782A IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	5782A IRG4BC20W-SPbF 150kHz EIA-418.	PDF
Contextual Info: PD - 95782 IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BC20W-SPbF 150kHz EIA-418.	PDF
IRF530S Contextual Info: PD - 95782 IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BC20W-SPbF 150kHz EIA-418. IRF530S	PDF
Contextual Info: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4BC20SPbF O-220AB O-220AB O-220AB.	PDF
Contextual Info: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	5639A IRG4BC20SPbF O-220AB O-220AB I4BC20SPbF	PDF
Contextual Info: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	5639A IRG4BC20SPbF O-220AB O-220AB	PDF
IRF 042 Abstract: IRG4BC20UDPBF Contextual Info: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter	Original	4909A IRG4BC20UDPbF O-220AB IRF 042 IRG4BC20UDPBF	PDF
555 triangular wave Abstract: IRG4BC20U Contextual Info: PD - 9.1448C IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	1448C IRG4BC20U O-220AB O-220AB 555 triangular wave IRG4BC20U	PDF
Contextual Info: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter	Original	4909A IRG4BC20UDPbF O-220AB	PDF

TRANSISTOR 13W Search Results

TRANSISTOR 13W Result Highlights (5)

TRANSISTOR 13W Datasheets Context Search

2sb504

2N2222A 338

y51 h 120c

MRF660

27mhz rf ic

2SC3133

2SC3133

2SC2783

2sc2783

TACAN transistor

IRF530S

IRF 042

555 triangular wave