Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 1354 Search Results

    TRANSISTOR 1354 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1354 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LB1213M

    Abstract: en1354
    Text: Ordering number: EN1354C Monolithic Digital IC LB1213M General-Purpose Transistor Array Package Dimensions Overview The LB1213M is a general-purpose transistor array containing 7 channels. It is especially suited for driving LEDs, lamps, small-sized relays, etc.


    Original
    PDF EN1354C LB1213M LB1213M 035A-MFP16 LB1213M] MFP16 en1354

    TRANSISTOR 2N3904

    Abstract: 2N3904 NPN Transistor 2n3904 specification 2n3904 npn 2N3904 plastic 2n3904 philips high gain low voltage PNP transistor TO-92 power electronic handbook 2N3904 equivalent DATA TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3904 NPN switching transistor Product specification Supersedes data of 1999 Apr 23 2004 Oct 11 Philips Semiconductors Product specification NPN switching transistor 2N3904 FEATURES PINNING • Low current max. 200 mA


    Original
    PDF M3D186 2N3904 2N3906. MAM279 SC-43A SCA76 R75/04/pp7 TRANSISTOR 2N3904 2N3904 NPN Transistor 2n3904 specification 2n3904 npn 2N3904 plastic 2n3904 philips high gain low voltage PNP transistor TO-92 power electronic handbook 2N3904 equivalent DATA TRANSISTOR

    transistor 2n3906

    Abstract: high gain low voltage PNP transistor TO-92 ALL DATA SHEET PNP switching transistor 2N3906 mhz PNP switching transistor 2N3906 2N3906 2N3904 plastic npn, transistor, sc 103 b 2N3904 NPN Transistor 2n3906 specification
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3906 PNP switching transistor Product specification Supersedes data of 1999 Apr 23 2004 Oct 11 Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING • Low current max. 200 mA


    Original
    PDF M3D186 2N3906 2N3904. MAM280 SCA76 R75/04/pp7 transistor 2n3906 high gain low voltage PNP transistor TO-92 ALL DATA SHEET PNP switching transistor 2N3906 mhz PNP switching transistor 2N3906 2N3906 2N3904 plastic npn, transistor, sc 103 b 2N3904 NPN Transistor 2n3906 specification

    2N4401 NPN Switching Transistor

    Abstract: Transistor 2N4401 2N4401 npn, transistor, sc 103 b transistor 2n4403 equivalent high gain low voltage PNP transistor TO-92 2N4401 TO-92 NPN switching transistor 2N4403 transistor 2N4403 2N4403
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 Philips Semiconductors Product specification NPN switching transistor 2N4401 FEATURES PINNING • High current max. 600 mA


    Original
    PDF M3D186 2N4401 2N4403. MAM279 SCA76 R75/04/pp7 2N4401 NPN Switching Transistor Transistor 2N4401 2N4401 npn, transistor, sc 103 b transistor 2n4403 equivalent high gain low voltage PNP transistor TO-92 2N4401 TO-92 NPN switching transistor 2N4403 transistor 2N4403 2N4403

    transistor 2N5401

    Abstract: 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1999 Apr 08 2004 Oct 28 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA


    Original
    PDF M3D186 2N5401 2N5551. MAM280 SCA76 R75/04/pp6 transistor 2N5401 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401

    1354

    Abstract: LB1213M 3035B
    Text: Ordering number : EN1354E Monolithic Digital IC LB1213M General-Purpose Transistor Array Overview The LB1213M is a general-purpose transistor arrays containing 7 channels. It is especially suited for driving LEDs, lamps, small-sized relays, etc. Features • Common-emitter 7 channels.


    Original
    PDF EN1354E LB1213M LB1213M 1354 3035B

    SMD310

    Abstract: No abstract text available
    Text: MSB709-RT1 Preferred Device PNP General Purpose Amplifier Transistor Surface Mount http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO −60 Vdc Collector−Emitter Voltage V(BR)CEO −45 Vdc Emitter−Base Voltage


    Original
    PDF MSB709-RT1 SMD310

    BFS17

    Abstract: BFS17R BFS17W BFS17 E1
    Text: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280


    Original
    PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 BFS17 E1

    BFS17

    Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original
    PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 D-74025 bfs17 Vishay 702 TRANSISTOR sot-23 85038

    "marking E1"

    Abstract: BFS17 BFS17R BFS17W
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original
    PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 "marking E1"

    Untitled

    Abstract: No abstract text available
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original
    PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99

    702 TRANSISTOR smd SOT23

    Abstract: 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718
    Text: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case


    Original
    PDF BFS17 BFS17R BFS17W OT-23 OT-23 BFS17W 702 TRANSISTOR smd SOT23 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718

    70.2 marking smd npn Transistor

    Abstract: SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23
    Text: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case


    Original
    PDF BFS17 BFS17R BFS17W OT-23 OT-23 BFS17W 70.2 marking smd npn Transistor SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23

    bfr96ts

    Abstract: No abstract text available
    Text: BFR96TS VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039


    Original
    PDF BFR96TS BFR96TS D-74025 25-Aug-04

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMI CON DUCTOR LB 1 2 1 3 M! :?«5«*a5S6%e9 15E i "I" 7TÌ7 D 7 t DUJ.hl.lh = | CORP •'P4 S-2.5’ 10 M onolithic Digital 1C 3035A General-Purpose Transistor Array 1354B The LB1213M is a general-purpose transistor array containing 7 channels.


    OCR Scan
    PDF 1354B LB1213M 035A-M16IC 7067KI/7315KI/9133KI LB1213M

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    OCR Scan
    PDF MUN5211T1 SC-70/SOT-323 0Cn354L| MUN5211T1

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor PHN110 FEATURES DESCRIPTION • High-speed switching N-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 S08 package. • No secondary breakdown • Very low on-resistance.


    OCR Scan
    PDF OT96-1 PHN110 1997Jun

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan
    PDF

    A3018

    Abstract: MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic darlington pair power transistor transistor 1354 SS126
    Text: MA3018 JA3018A pA3019 mA3026 pA3036 MA3039 •|jA3045 pA3046 •\i A3054 mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E SC R IP TIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed


    OCR Scan
    PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 A3018 MONOLITHIC DIODE ARRAYS A3054 MA3046 UA3026HM 6 "transistor arrays" ic darlington pair power transistor transistor 1354 SS126

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan
    PDF Q62702-F1321 BFG194 OT-223 23SbDS 012177b Q1E1777

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • = 7GHz F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan
    PDF 900MHz OT-323 Q62702-F1490

    transistor smd 12p

    Abstract: transistor 12p smd smd transistor at t21 transistor smd t21 smd transistor 12p smd transistor 2x5 B7 smd transistor BLT81 transistor ft 960 smd 12p
    Text: Philips Semiconductors ^ 711Dfi5b D0b^3flg P12 BlPHIN Product specification UHF power transistor BLT81 QUICK REFERENCE DATA FEATURES RF performance at Ts < 60 °C in a common emitter test circuit note 1 . • SMD encapsulation MODE OF OPERATION f (MHz) CW class-B, narrow band


    OCR Scan
    PDF 711002b BLT81 OT223 MSC092 MRCQ89 transistor smd 12p transistor 12p smd smd transistor at t21 transistor smd t21 smd transistor 12p smd transistor 2x5 B7 smd transistor transistor ft 960 smd 12p