TRANSISTOR 1313 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and hign

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

10160-001

Abstract: std motor G3202 00002EE0 g3425
Contextual Info: HIGH PERFORMANCE TRANSISTOR INVERTER TRUE TORQUE CONTROL DRIVE SERIES PROFIBUS-DP COMMUNICATIONS INTERFACE December, 1998 ICC #10160-001 Introduction Thank you for purchasing the “Profibus-DP Communications Interface” for the Toshiba TOSVERT-130 G3 High-Performance Transistor Inverter. Before using the

BFT46

Contextual Info: • L.bSB'm DD253fll 31T H A P X N AUER PHILIPS/DISCRETE b7E » BFT46 y v N-CHANNEL SILICON FET Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film

2n918

Abstract: 2n918 transistor 2N918/2N918
Contextual Info: 2N918 Hfe Min 20 Ft Typ 600 MHz Transistor Polarity NPN Current Ic Continuous Max. Page 1 of 1 Enter Your Part # Home Part Number: 2N918 Online Store 2N918 Diodes Hfe Min 20 Ft Typ 600 MHz Transistor Polarity NPN Transistors Integrated Circuits Current Ic Continuous Max 0.05 A Voltage Vcbo 30 V

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

TG 2039

Abstract: ic k1 sanyo marking JE b1181 2SC3189 DDD3710 LN 2003a b1251 n1cj marking 6j1
Contextual Info: SANYO SEMICONDUCTOR 1BE T | CORP 7 * m i3 7 b ODCI4325 7 | r - 3 S - / l 2SC3189 2010A NPN Epitaxial Planar Silicon Transistor C R T Display Horizontal Deflection Output Applications 1313A Features . High switching speed. . Especially suited for high-definition CRT displays

uA726 equivalent

Abstract: uA726 MA726C A726 MA726 MA726HM A726H Planar EL Displays transistor bw 51 Monolithic Transistor Pair
Contextual Info: MA726 TEMPERATURE-CONTROLLED DIFFERENTIAL PAIR FAIRCHILD LINEAR IN TE G R ATED C IR C U IT G E N E R A L D E S C R IP T IO N — T h e » A 7 2 6 is a M onolithic Transistor Pair in a high thermal-resistaoce package, held at a constant temperature by active tem perature regulator circu itry . T h e transistor pair

EME-6300H

Abstract: 6300H mos die CY7C1399 CY7C197 CY7C199
Contextual Info: Qualification Report June, 1995 - QTP# 94465 Version 1.0 RAM2.8 TRANSISTOR FOR RAM2.5 PROCESS PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied:

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT597 ISSUE 3 - OCTOBER 1995_ COMPLEMENTARY TYPE FMMT497 PARTMARKING DETAIL - 597 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage C ollector-E m itter Voltage VALUE UNIT VCBO

2SB698

Abstract: 2SD734 transistor 2SD734 ITR08332 ITR08333 ITR08334 2SD734 G
Contextual Info: Ordering number:ENN512F PNP/NPN Epitaxial Planar Silicon Transistor 2SB698/2SD734 1W AF Output, Electronic Governor, DC-DC Converter Applications Features Package Dimensions • Audio 1W output. unit:mm 2003B [2SB698/2SD734] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5

Contextual Info: ON Semiconductort CATV Transistor MPSH17 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage VCBO 20 Vdc Emitter −Base Voltage VEBO 3.0 Vdc PD 350 2.81

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

2sd734

Abstract: 2SB698 512F
Contextual Info: Ordering number:512F PNP/NPN Epitaxial Planar Silicon Transistor 2SB698/2SD734 1W AF Output, Electronic Governor, DC-DC Converter Applications Package Dimensions unit:mm 2003A [2SB698/2SD734] JEDEC : TO-92 EIAJ : SC-43 SANYO : NP : 2SB698 for audio 1W output.

225-400 MHz 12 volt 15 watt

Abstract: 100 watt hf transistor 12 volt MRF305 allen bradley 100 - c 30 Unelco MHT10
Contextual Info: MRF305 silicon T h e IlF Line 30 W-400 MHz CO NTROLLED "Q" RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL I C O N . . . d e s ig n e d p r im a r ily f o r w id e b a n d la rg e -sig n a l d r iv e r a n d o u t p u t a m p lif ie r stages in th e 2 2 5 - 4 0 0 M H z fr e q u é n c y range.

Contextual Info: Ordering number:EN 851G SAiYO No.851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor i HF Amp Applications Use . Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. Features . High fT 230MHz typ. and small cre(l.lpF typ.).

2SA1177

Abstract: 8511
Contextual Info: Ordering number:EN851G PNP Epitaxial Planar Silicon Transistor 2SA1177 HF Amp Applications Use Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. unit:mm 2033 [2SA1177] Features · High fT 230MHz typ. and small Cre (1.1 pF typ.).

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

M113

Abstract: t4bu SD1013-3
Contextual Info: m âWt* Pr&<iuvt$ m Micmsemi 140 Commerce Drive Wlontgomeryviile, PA 18936-1013 Tel: 215 831-9840 SD1013-3 RF & MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 150MHz VOLTAGE 2SV POWER OUT 10W POWER GAIN 10dB EFFICIENCY 55%TYP

PD9555

Abstract: LS 1316 2N7219 555C IRFM240 2N7219 JANTX 2N721
Contextual Info: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM 240 SN7S19 JANTXSN7S19 JANTXVSN7S19 [REF: MIL-S-1S500/596] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET11 technology ¡s the key to International

2SA1177

Abstract: IC1005 2sa117 ITR02968 ITR02969 ITR02970 ITR02971 TA-2005 GFE10
Contextual Info: Ordering number:ENN851H PNP Epitaxial Planar Silicon Transistor 2SA1177 HF Amp Applications Use Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. unit:mm 2033A [2SA1177] 4.0 2.2 3.0 Features · High fT 230MHz typ. and small Cre (1.1 pF typ.).

2SA1177

Abstract: ITR02968 ITR02969 ITR02970 ITR02971 ta2005 TA-2005
Contextual Info: Ordering number:ENN851H PNP Epitaxial Planar Silicon Transistor 2SA1177 HF Amp Applications Use Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. unit:mm 2033A [2SA1177] 4.0 2.2 3.0 Features · High fT 230MHz typ. and small Cre (1.1 pF typ.).