TRANSISTOR 1301 Search Results

2SB1301

Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: R5527K SERIES 3A Load Switch IC NO. EA-312-130122 OUTLINE The R5527K Series are N-channel load switch ICs with low supply current, Typ. 40µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at on/off state

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

capacitor philips

Abstract: transistor C3
Contextual Info: BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

BLF6G38S-25

Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
Contextual Info: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance

Contextual Info: BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor Rev. 4 — 7 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance

RF NPN POWER TRANSISTOR 3 GHZ 200 watts

Contextual Info: e PTB 20079 10 Watts, 1.6–1.7 GHz INMARSAT RF Power Transistor Description The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10

nxp 1791

Abstract: radar 77 ghz NXP
Contextual Info: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 4 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance

Contextual Info: e PTB 20216 6 Watts, 1.8–2.0 GHz RF Power Transistor Description The 20216 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency band. Rated at 6 watts minimum output power, it may be used for

Contextual Info: e PTB 20220 15 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications,

Contextual Info: e PTB 20080 25 Watts, 1.6–1.7 GHz RF Power Transistor Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP

transistor 1850

Contextual Info: e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP

ericsson 20151

Abstract: 9434 1198E bav 17 diode
Contextual Info: e PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

828 TRANSISTOR equivalent

Contextual Info: e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

PTB 20200

Contextual Info: e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier

JX - 638

Abstract: 20190 UT85-25 UT-85-25 0280 212 010 microstrip
Contextual Info: e PTB 20190 175 Watts, 470–806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically

PTB 20200

Contextual Info: e PTB 20200 30 Watts, 380–500 MHz RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380–500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP

Contextual Info: e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

9434

Contextual Info: e PTB 20216 6 Watts, 1.8–2.0 GHz RF Power Transistor Description The 20216 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency band. Rated at 6 watts minimum output power, it may be used for

8801

Contextual Info: e PTB 20176 5 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power

PTB 20017

Contextual Info: e PTB 20017 150 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it

Johanson Piston Trimmer

Abstract: G200 3 w RF POWER TRANSISTOR NPN 5.8 ghz
Contextual Info: e PTB 20202 125 Watts, 1465–1513 MHz Cellular/DAB RF Power Transistor Description The 20202 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 125 watts minimum output power, it is specifically intended for cellular