TRANSISTOR 12E Search Results

TRANSISTOR 12E Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 12E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
EM- 546 motor Abstract: 2N6545 2N6545 Motorola 2N6544 Text: MOTOROLA SC XSTRS/R F 12E D \| b3b72S4 QQflMbbt Ö \| T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,	OCR Scan	b3b72S4 2N6545 EM- 546 motor 2N6545 Motorola 2N6544	PDF
SL362C Abstract: 362C plessey SL360 High Speed Switches SL360G Text: PLESSEY SEMICONDUCTORS 12E 1 7ESG513 0GQ773tl ?\| SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as monolithic silicon devices. They feature accurate parameter matching and close	OCR Scan	7ESG513 0GQ773tl SL360G SL362C SL360G SL362C 60MHz) SL360] 60MHz 362C plessey SL360 High Speed Switches	PDF
BUV 12 Abstract: buv12 Text: MGTORCLA SC X S T R S /R F 12E O I b3b?554 OQflMflat 0 \| MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.	OCR Scan		PDF
BF180 Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504 Text: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti	OCR Scan	BF180 BF180 s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504	PDF
2N4233 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F 12E D \| b3t.7B5M 000450^ 3 \| 7^33- MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 2N4233A MEDIUM-POWER SILICON TRANSISTOR . . . designed for general-purpose pow er amplifier and switching applications, 5.0 AMPERE SILICON POWER TRANSISTOR	OCR Scan	2N4233A 2N4233	PDF
sm 0038 Abstract: K 1113 BDY58 Transistor 126 BUV10N transistor 12E transistor 1B Text: MOTOROLA SC XSTRS/R 12E D \| F b 3 b 7 2 S4 GGâM â? T \| MOTOROLA SEMICONDUCTOR TECHNICAL DATA 25 AM PERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high current, high speed, high power applications.	OCR Scan	b3b72S4 20atlc BDY58 AN415A) sm 0038 K 1113 BDY58 Transistor 126 BUV10N transistor 12E transistor 1B	PDF
BF115 Abstract: BF 145 transistor transistor bf 175 transistor bf 910 transistor 115 thomson tuners C22E transistor CD 910 oscillateur V12EC Text: BF 115 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L The NPN plan epitaxial transistor BF 115 is intended for use in front-end and oscillatormixer stages of FM tuners and generally for all HF uses. Le transistor NPN " plan é p ita xia l" BF 115 est desti	OCR Scan	-c12e -V12eCC) ----C22e BF115 BF 145 transistor transistor bf 175 transistor bf 910 transistor 115 thomson tuners C22E transistor CD 910 oscillateur V12EC	PDF
transistor k 425 Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A Text: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 \| BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED	OCR Scan	r-33-73 BU522 BU522A BU522B BU522) BU522A) BU522B) BU522A, transistor k 425 sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A	PDF
DM 0265 R Abstract: mpsu60 transistor 4317 MPS-U60 SS11 R4317 4317 transistor LF625 MPSU60 transistor Text: MOTOROLA SC 12E 0 I fci3fci755M 0QÖSS11 b \| XSTRS/R F r-4 3 -17 MOTOROLA SEMICONDUCTOR MPS-U60 TECHNICAL DATA & CON ANNULAR TRANSISTOR PNP SILICON HIGH VOLTAGE TRANSISTOR fo r general-purpose app lication s requiring high breakItages, low saturation voltages and low capacitan ce.	OCR Scan	r-43-17 MPS-U60 DM 0265 R mpsu60 transistor 4317 MPS-U60 SS11 R4317 4317 transistor LF625 MPSU60 transistor	PDF
Siemens 1736 Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312 Text: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for	OCR Scan	0235bG5 Q004312 BCY66 Q60203-Y66 TcaseS45Â fi23Sb05 Q0QM31? 120Hz Siemens 1736 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312	PDF
transistor T K 2056 Abstract: K 2056 transistor transistor K 2056 Text: SANYO SEMICONDUCTOR 12E CORP D \| 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage	OCR Scan	SS2SC4271 T0126 300mA, 100mA) SS2SC4272 1S-126A IS-20MA transistor T K 2056 K 2056 transistor transistor K 2056	PDF
j139 Abstract: 0395 ADC BD179 BD180 3268 127 D TRANSISTOR H127 Text: motorola x s t r s /r sc 12E D § b3b7SS4 QQÖ4713 2 \| f MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	OCR Scan	BD179 BD180 Q0fi4713 O-22SAA j139 0395 ADC BD180 3268 127 D TRANSISTOR H127	PDF
K 3264 transistor Abstract: BD 266 S K 3264 transistor technical data transistor Bd 575 TRANSISTOR BD 168 10 watt power transistor bd BD 266 A transistor BD 139 K1461 BD 140 transistor Text: MOTOROLA SC 12E D § b3b7554 0aôM7Q1 Q \| XSTRS/R F T-^-Oß MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC M ED IU M POWER SILICON NPN TRANSISTOR 1.5 AMPERE POWER TRANSISTOR . . . designed fo r use as audio amplifiers and drivers utilizing com plem entary o r quasi com plementary circuits.	OCR Scan	b3b7254 AN-4151 K 3264 transistor BD 266 S K 3264 transistor technical data transistor Bd 575 TRANSISTOR BD 168 10 watt power transistor bd BD 266 A transistor BD 139 K1461 BD 140 transistor	PDF
transistor BD 522 Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800 Text: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M \| BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.	OCR Scan	b3fcj72SM BD796 BD798 BD798 BD800 BD802 transistor BD 522 TRANSISTOR BD 168 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800	PDF

k 319 Abstract: Q62702-F272 A 798 transistor transistor H 802 BFS55 Text: BFS55 NPN Transistor for RF applications up to the GHz range BFS 55 is a NPN silicon RF transistor in a case 18 A 4 DIN 41 876 TO -72 . The terminals are electrically insulated from the case. The transistor is especially designed for use in RF applications up into the GHz range, e.g.,antenna amplifiers and radar	OCR Scan	BFS55 BFS55 62702-F272 p21e--+ k 319 Q62702-F272 A 798 transistor transistor H 802	PDF
BFX89 Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684 Text: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general	OCR Scan	23ShQS Q62702-F296 2JS41W BFX89 Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684	PDF
mj6503 motorola Abstract: MJ6503 mj6503 transistor MJ6502 MARK B3L MJ-6503 Text: MOTOROLA SC X S TR S /R F 1 SE D I b 3b ? 2 S4 QQÖMTÖS 2 \| MOTOROLA SEMICONDUCTOR MJ6503 TECHNICAL DATA D e siS’ruM's D ata Sheet 8 AM PERE PNP SIUCON POWER TRANSISTOR SWITCHMODE SERIES PNP SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The MJ6503 transistor is designed for high-voltage, high-speed,	OCR Scan	MJ6503 MJ6503 mj6503 motorola mj6503 transistor MJ6502 MARK B3L MJ-6503	PDF
transistor k 316 Abstract: k 1 transistor BFS20 Q62702-F350 Planar RF Transistor TRANSISTOR BO sot 23 x 316 Text: BFS 20 NPN Silicon planar RF transistor BFS 20 is an epitaxial NPN silicon planar RF transistor in a plastic package 23 A 3 DIN 41 869 SOT-23 , designed for use in film circuits. The transistor is marked: NA 0 .T -D .0 1 6 T ype Code O rd e r n u m b e r	OCR Scan	BFS20 OT-23) Q62702-F350 00K/W\ transistor k 316 k 1 transistor BFS20 Q62702-F350 Planar RF Transistor TRANSISTOR BO sot 23 x 316	PDF
sem 2106 Abstract: bux13 Text: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =521 3 \| MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.	OCR Scan	BUX13 AN415A) sem 2106 bux13	PDF
IR 92 0151 Abstract: MJ12002 MJ-12002 TC204A 4229PL00-3C8 Text: MOTORCLA SC XSTRS/R F 12E D \| fc.3t.72SM GGflSQflfi T f T-J3-/J MOTOROLA SEMICONDUCTOR MJ12002 TECHNICAL DATA D e s ig n e rs D a ta S h e e t 2.5 AMPERE NPN SILICON POWER TRANSISTOR HORIZONTAL DEFLECTION TRANSISTOR 1500 VOLTS 76 WATTS . . . specifically designed for use in large screen color deflection	OCR Scan	MJ12002 14-MAXIMUM IR 92 0151 MJ12002 MJ-12002 TC204A 4229PL00-3C8	PDF
Untitled Abstract: No abstract text available Text: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d \| MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,	OCR Scan	b3b72S4 MJ10014 MJ10014	PDF
3004x Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79 Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for	OCR Scan	fl23SbOS 0G04737 BFX55 Q60206-X55 fl235bOS 3004x Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79	PDF
ms 7254 ver 1.1 Abstract: ms 7254 ver 3.0 T557 Text: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS	OCR Scan	L3b75S4 MJE13070 MJE13070 ms 7254 ver 1.1 ms 7254 ver 3.0 T557	PDF
transistor ESM 30 Abstract: ESM269 Text: ESM 269 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M , PLA N A R E P IT A X IA L PRELIM IN A R Y DATA N O T I C E P R E L IM I N A I R E ESM 269 is a very tow noise VHF transistor. It features low intermo dulation distorsion V CBO	OCR Scan		PDF

TRANSISTOR 12E Search Results

TRANSISTOR 12E Result Highlights (5)

TRANSISTOR 12E Datasheets Context Search

EM- 546 motor

SL362C

BUV 12

BF180

2N4233

sm 0038

BF115

transistor k 425

DM 0265 R

Siemens 1736

transistor T K 2056

j139

K 3264 transistor

transistor BD 522

k 319

BFX89

mj6503 motorola

transistor k 316

sem 2106

IR 92 0151

Untitled

3004x

ms 7254 ver 1.1

transistor ESM 30