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    TRANSISTOR 107 A Search Results

    TRANSISTOR 107 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 107 A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TIP105

    Abstract: TIP107 A 107 transistor TIP106 transistor TIP105 transistor 107 A
    Text: TIP105/106/107 TIP105/106/107 ◎ SEMIHOW REV.A0,Oct 2007 TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min.


    Original     		TIP105/106/107 TIP100/101/102 TIP105 TIP106 TIP107 TIP105 TIP107 A 107 transistor TIP106 transistor TIP105 transistor 107 A PDF

    BS107

    Abstract: No abstract text available
    Text: SIEMENS BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 S Type BS 107 ^DS 200 V Type BS 107 Ordering Code Q67000-S078 lD 0.13 A ffDS(on) 26 Q Pin 3 D G Package Marking TO-92 BS 107


    OCR Scan     		Q67000-S078 E6288 BS107 PDF

    RG-107 diode

    Abstract: marking BS Q67000-S078
    Text: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information


    Original     		Q67000-S078 E6288 RG-107 diode marking BS Q67000-S078 PDF

    Q67000-S078

    Abstract: BS 107
    Text: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information


    Original     		Q67000-S078 E6288 Q67000-S078 BS 107 PDF

    22 J1J

    Abstract: No abstract text available
    Text: Product Description SSW-107 Stanford Microdevices’ SSW-107 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch


    Original     		SSW-107 SSW-107 500MHz 22 J1J PDF

    Untitled

    Abstract: No abstract text available
    Text: SSW-107 Product Description Stanford M icrodevices’ SSW -107 is a high performance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch


    OCR Scan     		SSW-107 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCO-107 Voltage Controlled Oscillator 500-1000 MHz DESCRIPTION The V C O 107 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise bipolar transistor and a proprietary output coupling circuit are utilized to provide flat


    OCR Scan     		VCO-107 PDF

    transistor B42

    Abstract: AX400 b42 transistor
    Text: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.


    OCR Scan     		b457S25 PH107 T-41-63 transistor B42 AX400 b42 transistor PDF

    A 107 transistor

    Abstract: No abstract text available
    Text: Artmm Coming Attractions m an A M P com pany Avionics Pulsed Power Transistor, 107W, TDM A Format 960 -1215 MHz PH0912-107 Features • • • • • • • • • Designed for JTID S Applications NPN Silicon Microwave Power Transistor Com m on Base Configuration


    OCR Scan     		PH0912-107 1090M 4585m A 107 transistor PDF

    photovoltaic module

    Abstract: SCHNEIDER PLC PVA1054 PVA1354 PVA3354 PVAZ172 PVD1054 PVD1354 PVD3354 PVDZ172
    Text: AN-107 Short Circuit Withstand Capability of the Photovoltaic Relay BOSFET is a trademark o f International Rectifier by Stan Schneider Introduction International Rectifier's power 1C, the Bidirectional Output Switch Field Effect Transistor (BOSFET), is designed


    OCR Scan     		AN-107 PVA3354 PVA3354 photovoltaic module SCHNEIDER PLC PVA1054 PVA1354 PVAZ172 PVD1054 PVD1354 PVD3354 PVDZ172 PDF

    CP107

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CP107 9AW TO-220 Non- Iso MARKING: CP 107 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 140 Collector -Base Voltage


    Original     		CP107 O-220 25deg C-120 CP107 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 05/106/107 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS


    OCR Scan     		TIP100/101/102 TIP105 TIP106 TIP107 PDF

    TLP100

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP105/106/107


    OCR Scan     		TIP100/101/102 TIP105/106/107 TIP100 TIP101 TIP102 TLP100 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ V c e = -4V, |c= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP100/101/102


    OCR Scan     		TIP105/106/107 TIP100/101/102 TIP105 TIP106 TIP107 TIP107 PDF

    NPN Transistor VCEO 80V 100V DARLINGTON IC 8A

    Abstract: No abstract text available
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, IC= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP100/101/102


    Original     		TIP105/106/107 O-220 TIP100/101/102 TIP105 TIP106 TIP107 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A PDF

    SSM3K318T

    Abstract: No abstract text available
    Text: SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applications +0.2 2.8-0.3 4.5 V drive Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V)


    Original     		SSM3K318T SSM3K318T PDF

    transistor Siemens 14 S S 92

    Abstract: transistor 115 47e
    Text: I 023SbOS 0020014 3 El SIEG SIEMENS AKTIENGESELLSCHAF 47E » T-21-Z5 BS 107 SIPMOS Small-Signal Transistor Vos /„ = 200 V =0.13 A flbs o n = 26 Q • N channel • Enhancement mode • Package: TO-92') "type Ordering code for version on tape Ordering code


    OCR Scan     		023SbOS T-21-Z5 Q67000-S078 Q67000-S060 chap60 235b05 transistor Siemens 14 S S 92 transistor 115 47e PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 10 0 /1 01/102


    OCR Scan     		TIP105/106/107 TIP106 TIP107 TIP105 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107


    OCR Scan     		TIP100/101/102 TIP101 TIP102 TIP100 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSR2107 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In S O T-23 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R 1=22K£1, R2=47K£1) • C om plem ent to K S R 1 107 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


    OCR Scan     		KSR2107 PDF

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type MOS Field Effect Transistor KPA1793 Features Low on-state resistance N-channel RDS on 1 = 69 m MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 72 m MAX. (VGS = 4.0 V, ID = 1.5 A) RDS(on)3 = 107 m MAX. (VGS = 2.5 V, ID = 1.0 A) P-channel RDS(on)1 = 115 m


    Original     		KPA1793 PDF

    Transistor 9012

    Abstract: H9012 equivalent a043 8550S H9012 SS9012 A043BJ-00 VCEO-20V
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 9012 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A043BJ-00 芯片厚度：240±20µm 管芯尺寸：430x430µm 2 焊位尺寸：B 极 107×107µm2，E 极 101×101µm2


    Original     		100mm A043BJ-00 SS9012H90128550S 625mW -500mA -25VIE -50mA Transistor 9012 H9012 equivalent a043 8550S H9012 SS9012 A043BJ-00 VCEO-20V PDF

    transistor 5401

    Abstract: H5401 2N5401
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 5401 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A043BJ-01 芯片厚度：240±20µm 管芯尺寸：430x430µm2 焊位尺寸：B 极 107×107µm2，E 极 101×101µm2


    Original     		100mm A043BJ-01 2N5401H5401 625mW -160V -150V -600mA transistor 5401 H5401 2N5401 PDF

    bc 303 transistor

    Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
    Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in


    OCR Scan     		PDF