transistor 1012 F
Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
|
Original
|
O-220
C-120
CSA1012,
CSC2562Rev210701
transistor 1012 F
transistor 1012
CSA1012
1012 transistor
1012 npn
|
PDF
|
transistor 1012
Abstract: CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220
Text: ,6,62 /LF 46&/ Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
|
Original
|
O-220
C-120
CSA1012,
CSC2562Rev210701
transistor 1012
CSA1012
hFE is transistor to-220
c 2562
hFE is transistor to220
|
PDF
|
ksr1012
Abstract: No abstract text available
Text: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
|
OCR Scan
|
KSR2012
ksr1012
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 66099 mu R A D IA TIO N T O L E R A N T O PTO C O U PLER OPTOELECTRONIC PRODUCTS DIVISION The collector is electrically connected to the case, Features c Meets or Exceeds M IL-S-19500 Radiation Requirements Current Transfer Ratio - 1 5 0% Typical 1000 Volts Electrical Isolation
|
OCR Scan
|
IL-S-19500
T4T70T
MIL-S-19500)
|
PDF
|
3D24N2Y
Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
Text: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät
|
OCR Scan
|
Ge1012
3D24N2Y
transistor sc 238
9008 transistor
transistor sc 308
SAL 41
transistor 9013
1008 transistor
X2C70
transistor D 1002
3D24N
|
PDF
|
PHILIPS SENSOR 2032
Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
Text: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V
|
Original
|
1616H
101CCD
WAG-05
PHILIPS SENSOR 2032
.47k capacitor image
ccd image sensor
Contact image sensor
BAS28
BAT74
BC860C
BFR92
BG40
CCD output buffer
|
PDF
|
6N13B
Abstract: 6H136 MGL250 MCL2501
Text: TT. mm flfl ! 3UALITY TECHNOLOGIES CORP D "I 7 4 h b û S l ?«ENERAD INSTRUMENT ¿g* DGOaTDT 3 'tnr-'¥/-&3 ^TRANSISTOR OPTOCOUPLERS m ê W m -• •* ' Ä S S Ä MCL2501 MGL2503 (HCPL-2503 MCL2502 (HCPL-2502) 6N136 6N135 PROPAGATION DELAY COMPARISON MINIMUM CTR SELECTION CHART
|
OCR Scan
|
MCL2501
MGL2503
HCPL-2503)
MCL2502
HCPL-2502)
6N136
6N135
MCL/HCPL-2503
6N135
6N13B
6H136
MGL250
|
PDF
|
VIP 22A
Abstract: AD7546 Vip ct 22A
Text: AN ALO G D E V IC E S FEATURES Low Offset Voltage Drift Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Current Crosstalk: -124dB at 1kHz Low Bias Current: 35pA max Warmed Up Low Offset Voltage: 250|iV max Low Input Voltage: 2|iV p-p
|
OCR Scan
|
-124dB
108dB
20-Pin
MIL-STD-883B
AD547
AD647
AD647
250/iV,
AD647J.
VIP 22A
AD7546
Vip ct 22A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Neutron testing of the ISL70444SEH quad operational amplifier Nick van Vonno Intersil Corporation 15 October 2013 Revision 0 Table of Contents 1. Introduction 2. Part Description 3. Test Description 3.1 Irradiation facility 3.2 Characterization equipment 3.3 Experimental Matrix
|
Original
|
ISL70444SEH
|
PDF
|
BUW52
Abstract: transistor st z7 S877 transistor 026a N1010A Scans-007954 LC8a DQ26A
Text: 7^5^537 ppgaa?! M • S G S -T H O M S O N ■ [L d e T F G M O ! S G S - T HO MS ON B 3ÜE U W 5 2 D FAST SWITCHING POWER TRANSISTOR ■ FAST SW ITCHING TIMES ■ LOW SW ITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
BUW52
O-218
BUW52
transistor st z7
S877
transistor 026a
N1010A
Scans-007954
LC8a
DQ26A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: That HEW LETT WHIM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar
|
OCR Scan
|
|
PDF
|
4N49 opto
Abstract: No abstract text available
Text: 4N47, 4N48, 4N49 JAN. JANTX, AND JANTXV OPTOCOUPLERS D 3 0 3 1 , SEPTEMBER 1987 GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR • Very High Current Transfer Ratio . . . 50 0% Typical 4N49 • Photon Coupling for Isolator Applications
|
OCR Scan
|
MIL-S-19
4N49 opto
|
PDF
|
TRANSISTOR sd 346
Abstract: Lautsprecher RFT L 2911 Lautsprecher LP C 4804 transistor TRANSISTOR b 882 p rft lautsprecher transistor GC 228 Transistor B 886 service-mitteilungen RFT KR 650
Text: SERVICE-MITTEILUNGEN VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio - television I Ausgabe 1988 Seite 8 1-4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Sicherheitskontrollen für 4oooer Parbfernsengeräte Nachfolgend geben wir Hinweise, welche speziellen Kontrollen
|
OCR Scan
|
untersc0037
TRANSISTOR sd 346
Lautsprecher RFT L 2911
Lautsprecher LP
C 4804 transistor
TRANSISTOR b 882 p
rft lautsprecher
transistor GC 228
Transistor B 886
service-mitteilungen
RFT KR 650
|
PDF
|
N1033A
Abstract: n1033 10000 series of ECL gates N1013A N1011A c 1006 TRANSISTOR eel -16-2005 N1017A N1010A N1014A
Text: S IG N E T IC S D IG IT A L 1 .0 0 0 /1 0 ,0 0 0 S E R IE S ECL V PART DC OUTPUT NO. <0 t o + 75UC Dual 4 In p u t Gate. L O A D IN G DELAY FA C TO R w e e ty p . 2 O R O u tp uts w/P ulldow ns 4 .0 2 N O R Outputs w /P ulldow ns Dual 4 In p u t Gat«, 2 O R Outputs w /P ulldow ns
|
OCR Scan
|
185MHz
N1033A
n1033
10000 series of ECL gates
N1013A
N1011A
c 1006 TRANSISTOR
eel -16-2005
N1017A
N1010A
N1014A
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SFH636 Vishay Semiconductors Optocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output FEATURES C 1 6 VCC A 2 5 E NC 3 4 • High speed connection optocoupler without base • Isolation test voltage: 5300 VRMS C
|
Original
|
SFH636
i179064
2002/95/EC
2002/96/EC
SFH636
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SFH636 Vishay Semiconductors Optocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output FEATURES C 1 6 VCC A 2 5 E NC 3 4 • High speed connection optocoupler without base • Isolation test voltage: 5300 VRMS C
|
Original
|
SFH636
i179064
2002/95/EC
2002/96/EC
SFH636
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Sil-Pad A2000 Higher Performance,High Reliability Insulator Features and Benefits T YPICAL PROPERT IES OF SIL-PAD A2000 PROPERTY Color • Thermal impedance: 0.32°C-in 2/W @50 psi • Optimal heat transfer • High thermal conductivity: 3.0 W/m-K IMPERIAL VALUE
|
Original
|
A2000
D2240
E1269
|
PDF
|
smd transistor HX 45
Abstract: MSK2541
Text: ISO 9001 CERTIFIED BY DSCC DUAL HIGH POWER OP-AMP M.S. KENNEDY CORP. 8170 Thompson Road Cicero, N.Y. 13039 FEATURES: 2541 315 699-9201 MIL-PRF-38534 QUALIFIED Available as SMD #5962-9083801 HX High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V
|
Original
|
2541SKB
MIL-PRF-38534
MSK2541
MSK2541B
5962-9083801HX
smd transistor HX 45
|
PDF
|
k 2541
Abstract: high power fet audio amplifier schematic capacitor, 50 microfarad 10v smd transistor HX 5962-9083801HX MSK2541 MSK2541B
Text: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP 2541 DUAL HIGH POWER OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Available as SMD #5962-9083801 HX High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V
|
Original
|
MIL-PRF-38534
2541SKB
MSK2541
MSK2541B
Military-MIL-PRF-38534
5962-9083801HX
k 2541
high power fet audio amplifier schematic
capacitor, 50 microfarad 10v
smd transistor HX
5962-9083801HX
MSK2541
MSK2541B
|
PDF
|
2SC4215
Abstract: No abstract text available
Text: 2SC4215 TO SH IBA 2SC4215 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55 pF Typ. Low Noise Figure : NF = 2 dB (Typ.) (f = 100 MHz)
|
OCR Scan
|
2SC4215
SC-70
2SC4215
|
PDF
|
transistor TIP3055
Abstract: No abstract text available
Text: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.
|
OCR Scan
|
TIP3055
OT-93
TIP2955.
003302b
bbS3T31
00350Efl
transistor TIP3055
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 0inE D ^53*131 0D1S5A7 □ RZB12250Y r- %-*>'- s' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.
|
OCR Scan
|
RZB12250Y
100ps;
|
PDF
|
GEOY6653
Abstract: Q62702-P215 Q62702-P216
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 229 SFH 229 FA SFH 229 SFH 229 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1100 nm SFH 229 und bei 880 nm (SFH 229 FA)
|
Original
|
GEOY6653
GEOY6653
Q62702-P215
Q62702-P216
|
PDF
|
smd transistor HX
Abstract: 5962-9083801HX MSK2541E MSK2541 MSK2541B 2.2 microfarad non-electrolytic capacitor 8-pin to3 high power fet audio amplifier schematic h208 application of class B power amplifier with high load resistance
Text: MIL-PRF-38534 CERTIFIED M.S. KENNEDY CORP DUAL HIGH POWER OP-AMP 2541 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Available as SMD #5962-9083801 HX and 5962-9083803HX High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V
|
Original
|
MIL-PRF-38534
5962-9083803HX
2541SKB
MSK2541
MSK2541E
MSK2541B
5962-9083801HX
MIL-PRF-38534,
smd transistor HX
5962-9083801HX
MSK2541E
MSK2541
MSK2541B
2.2 microfarad non-electrolytic capacitor
8-pin to3
high power fet audio amplifier schematic
h208
application of class B power amplifier with high load resistance
|
PDF
|