TRANSISTOR 1004 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

1004MP

Abstract: Avionics
Contextual Info: 1004MP 4 Watts, 35 Volts, Pulsed Avionics - 960-1215 MHz GENERAL DESCRIPTION The 1004MP is a COMMON BASE transistor capable of providing 4 Watts of Pulsed, RF output power in the band 960 to 1215 MHz. This transistor is specifically designed for pulsed Avionics amplifier applications. It utilizes

TRR25-10XX2

Abstract: TRR 100-12xx2 transistor c282 trr 30-06xx2 TRANSISTOR BIPOLAIRE 75-10xx2 06XX2 50-10XX2 5012-X ISOLA DE 156
Contextual Info: A S E A B R Oü JN /AB B □□40300 S.ENICOÎ' □□□□SOS Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren mit 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes 1 J V - 5 3 ' o I Transistor Type/Type ATRR ATRR

1004MP

Contextual Info: 1004MP 4 Watts, 35 Volts Pulsed Avionics, 960 to 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1004MP is a COMMON BASE transistor capable of providing 4 Watts of Pulsed, RF output power in the band 960 to 1215 MHz. This transistor is specifically designed for pulsed Avionics amplifier applications. It utilizes gold

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose

ic TT 2222

Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
Contextual Info: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

SOT-363 marking 7a

Abstract: sot363 marking 02 SOT-363 marking 22 SOT-363 marking 187 SOT363 marking 49 marking 7A 7L Marking MUN5235DW1T1 marking 7k sot363 MUN5237DW1T1
Contextual Info: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

LLE103101

Abstract: LLE305000 LLE205100 honeywell 940 LLE101000 LLE102101 LLE101101 LLE102000 LLE103000 LLE105000
Contextual Info: LLE Series Liquid level sensors DESCRIPTION The enhanced series of liquid level sensors incorporates a the dome to the photo-transistor. When liquid covers the photo-transistor trigger which provides a digital output that dome, the effective refractive index at the dome-liquid

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: N amer philips /di^ crete ~ □bE~p 86D 0 1 1 2 4 00133L2 □ • D T * -" 3 3 " ^ B L U 5 T “ ~ _ { _ V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband

BLX65

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53^31 0DSTbD3 531 IAPX BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO-39 metal envelope with the collector connected to the

msc 140 -10003

Abstract: MSC1330 MSC 1330 Microwave Transistor msc diode AN565 1330 transistor power semiconductor 1973 MSC transistors
Contextual Info: AN565 APPLICATION NOTE MEDIAN-TIME-TO-FAILURE MTF OF AN L-BAND POWER TRANSISTOR UNDER RF CONDITIONS W. E. Poole - L. G. Walshak 1. INTRODUCTION.1 At last year’s Symposium (1973), two papers presented preliminary data from the first known comprehensive life-tests on any microwave power transistor operated under RF conditions. This paper

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

MSC1330

Abstract: msc 140 -10003 AN565 MSC Microwave msc diode MSC 1330 Microwave Transistor T21004
Contextual Info: AN565 APPLICATION NOTE MEDIAN-TIME-TO-FAILURE MTF OF AN L-BAND POWER TRANSISTOR UNDER RF CONDITIONS W. E. Poole - L. G. Walshak 1. INTRODUCTION.1 At last year’s Symposium (1973), two papers presented preliminary data from the first known comprehensive life-tests on any microwave power transistor operated under RF conditions. This paper

TPM4040

Abstract: ITT 1N4007 BALLAST MOTOROLA TRANSISTOR UO 112 1N4007 motorola rf Power Transistor 1N4007, ITT 1N4007 DC COMPONENTS tantal PACKAGE 1N4007 itt
Contextual Info: MOT OROL A SC XSTRS/R F 4bE D • f c>3t , 72S4 GO^Sa^M fi « f l O T h ~T=-3 3 ~ 3 -~ l MOTOROLA m SEM ICO NDUCTOR TECHNICAL DATA TPM 4040 The RF Line UHF Power Transistor The TPM4040 is an internally matched transistor in a push-pull package specially

2N6364

Abstract: 75W NPN 100-400MHz 2N636
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N6364 Silicon NPN power UHF transistor 2N6364 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:

2N6362

Abstract: 100-400MHz
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N6362 Silicon NPN power UHF transistor 2N6362 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:

100-400MHz

Abstract: 2N6362 UHF TRANSISTOR
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N6362 Silicon NPN power UHF transistor 2N6362 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power: