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    Photo SCR

    Abstract: SCR PNPN ma 2830 MSC1330 chip scr mxp1018 MXP1018-C
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1018-C Photo SCR Chip Features • • • • • • • Light Activated Photo SCR Planar PNPN High Voltage Cathode and Gate pads are Aluminum Wire bondable Anode is backside of die


    Original     		MXP1018-C MSC1330 Photo SCR SCR PNPN ma 2830 chip scr mxp1018 MXP1018-C PDF

    MSC1330

    Abstract: msc 140 -10003 AN565 MSC Microwave msc diode MSC 1330 Microwave Transistor T21004
    Text: AN565 APPLICATION NOTE MEDIAN-TIME-TO-FAILURE MTF OF AN L-BAND POWER TRANSISTOR UNDER RF CONDITIONS W. E. Poole - L. G. Walshak 1. INTRODUCTION.1 At last year’s Symposium (1973), two papers presented preliminary data from the first known comprehensive life-tests on any microwave power transistor operated under RF conditions. This paper


    Original     		AN565 30-watt MSC-1330/A MSC-1330/B, MSC1330 msc 140 -10003 AN565 MSC Microwave msc diode MSC 1330 Microwave Transistor T21004 PDF

    msc 140 -10003

    Abstract: MSC1330 MSC 1330 Microwave Transistor msc diode AN565 1330 transistor power semiconductor 1973 MSC transistors
    Text: AN565 APPLICATION NOTE MEDIAN-TIME-TO-FAILURE MTF OF AN L-BAND POWER TRANSISTOR UNDER RF CONDITIONS W. E. Poole - L. G. Walshak 1. INTRODUCTION.1 At last year’s Symposium (1973), two papers presented preliminary data from the first known comprehensive life-tests on any microwave power transistor operated under RF conditions. This paper


    Original     		AN565 30-watt MSC-1330/A MSC-1330/B, msc 140 -10003 MSC1330 MSC 1330 Microwave Transistor msc diode AN565 1330 transistor power semiconductor 1973 MSC transistors PDF