marking "BSs"
Abstract: No abstract text available
Text: BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BSS 110 -50 V -0.17 A 10 Ω TO-92 SS 110 Type BSS 110 BSS 110 BSS 110 Ordering Code
|
Original
|
PDF
|
Q62702-S500
Q62702-S278
Q67000-S568
E6288
E6296
E6325
marking "BSs"
|
CHIP T502 S
Abstract: JS 08321 BR 8050 CHIP T502 P BFP420 BGB420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN
Text: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001
|
Original
|
PDF
|
BGB420,
D-81541
BGB420
BGB420
BFP420.
GPS05605
CHIP T502 S
JS 08321
BR 8050
CHIP T502 P
BFP420
GPS05605
T502
RF Transistor s-parameter
s-parameter RF POWER TRANSISTOR NPN
|
BR 8050
Abstract: BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S BGB420
Text: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001
|
Original
|
PDF
|
BGB420,
D-81541
BGB420
BGB420
BFP420.
GPS05605
BR 8050
BFP420 application notes
SOT343 marking 0 mmic
t502 6
CHIP T502 P
414 rf transistor
s-parameter RF POWER TRANSISTOR NPN
BR 8050 D
CHIP T502 S
|
CCD55-30
Abstract: CCD05-30 7133B
Text: CCD55-30 High Performance CCD Sensor FEATURES * 1252 H by 1152 (V) Pixel Format * 28 by 26 mm Active Area * Visible Light and X-Ray Sensitive * New Improved Very Low Noise Amplifier for Slow-Scan Systems and Large Signal Amplifier for Binned Operation *
|
Original
|
PDF
|
CCD55-30
CCD55
CCD05-30
7133B
|
CCD55-30
Abstract: 7858a equivalent 6612a Scientific Imaging Technologies CCD05
Text: CCD55-30 Inverted Mode Sensor High Performance CCD Sensor FEATURES * 1252 H by 1152 (V) Pixel Format * 28 by 26 mm Active Area * Visible Light and X-Ray Sensitive * New Improved Very Low Noise Amplifier for Slow-Scan Systems and Large Signal Amplifier for Binned Operation
|
Original
|
PDF
|
CCD55-30
CCD55
7858a
equivalent 6612a
Scientific Imaging Technologies
CCD05
|
siemens m
Abstract: sensor x-ray dental sensor e2v MA 785 A dental x-ray sensor CCD76-40
Text: CCD76-40 Digital Intra-Oral X-ray Dental Sensor FEATURES The device is not designed for autoclaving but will withstand cleansing solutions defined within this data sheet. The package material is a conductive carbon fibre composite. * 1250 x 1640 Pixel Image Area
|
Original
|
PDF
|
CCD76-40
DHA-PC14-3G
DHA-HPD14-10
CCD76-40,
siemens m
sensor x-ray
dental sensor
e2v MA 785 A
dental x-ray sensor
|
TTK101
Abstract: TTK101TK
Text: TTK101TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101TK For ECM Unit: mm Application for compact ECM 0.22±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation PD 100 mW Junction Temperature Tj 125 °C Tstg −55 to 125 °C
|
Original
|
PDF
|
TTK101TK
TTK101
TTK101TK
|
TTK101MFV
Abstract: No abstract text available
Text: TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 V 10 mA Drain power dissipation PD Note 1 150 mW Junction temperature Storage temperature range Note: Tj 125 °C Tstg
|
Original
|
PDF
|
TTK101MFV
TTK101MFV
|
IN5817 schottky diode symbol
Abstract: IN5817 diode Samsung Tantalum Capacitor TC1201 pin configuration transistor 2N2222 tc120x in5817 2N2222 NPN Transistor features A 673 C2 transistor 595D
Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller FEATURES GENERAL DESCRIPTION • TC120 is a 300 KHz PFM/PWM step-down Buck DC/DC regulator/controller combination for use in systems operating from two or more cells, or in line-powered applications. It uses PWM as the primary modulation scheme, but
|
Original
|
PDF
|
TC120
TC120
TC120-1
DS21365A
IN5817 schottky diode symbol
IN5817 diode
Samsung Tantalum Capacitor
TC1201
pin configuration transistor 2N2222
tc120x
in5817
2N2222 NPN Transistor features
A 673 C2 transistor
595D
|
Untitled
Abstract: No abstract text available
Text: TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm 0.22±0.05 Rating Unit VGDO -20 V IG 10 mA PD Note 1 150 mW Tj 125 °C Tstg −55 to 125 °C Gate-drain voltage Gate current Drain power dissipation Junction temperature
|
Original
|
PDF
|
TTK101MFV
|
Untitled
Abstract: No abstract text available
Text: LTM4637 20A DC/DC µModule Step-Down Regulator FEATURES DESCRIPTION Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision
|
Original
|
PDF
|
LTM4637
4637fb
com/LTM4637
|
ATX 235
Abstract: p-chanel mosfet atx 2003 ACPI Regulator-Controller all transistor capacitor 200uF 12V 2SD1802 RT9230 RT9231 RT9641A
Text: RT9641A/B General Description Triple Linear Regulator Controller Support ACPI Control Interface Features The RT9641A/B, paired with either the RT9230 or RT9231 simplifies the implementation of ACPI-compliant designs in microprocessor and computer applications. The IC
|
Original
|
PDF
|
RT9641A/B
RT9641A/B,
RT9230
RT9231
16-pin
16-Lead
ATX 235
p-chanel mosfet
atx 2003
ACPI Regulator-Controller
all transistor
capacitor 200uF 12V
2SD1802
RT9231
RT9641A
|
K/SAC305 reflow bga
Abstract: No abstract text available
Text: LTM4637 20A DC/DC µModule Step-Down Regulator Features Description Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision
|
Original
|
PDF
|
LTM4637
4637fc
com/LTM4637
K/SAC305 reflow bga
|
RT9641C
Abstract: ATX 235 2SD1802 MMBT2907A RT9230 RT9231
Text: RT9641C Triple Linear Regulator Controller Support ACPI Control Interface General Description The RT9641C, paired with either the RT9230 or RT9231 simplifies the implementation of ACPI-compliant designs in microprocessor and computer applications. The IC integrates two linear controllers and a low-current pass
|
Original
|
PDF
|
RT9641C
RT9641C,
RT9230
RT9231
16-pin
16-Lead
DS9641C-02
RT9641C
ATX 235
2SD1802
MMBT2907A
RT9231
|
|
|
Step-Down
Abstract: 16V Step-Down DC/DC Converter XC9246 XC9247
Text: XC9246/XC9247 Series ETR05024-005a 16V Driver Transistor Built-In Step-Down DC/DC Converters ☆GreenOperation-compatible •GENERAL DESCRIPTION XC9246/XC9247 series is a 16V step-down DC/DC converter with a built-in driver transistor. The series provides high
|
Original
|
PDF
|
XC9246/XC9247
ETR05024-005a
Step-Down
16V Step-Down DC/DC Converter
XC9246
XC9247
|
photocoupleur
Abstract: schema d un transistor en Convertisseur Tension Frequence MODULATION DE PHASE SI9117 equivalente frequence diodes de regulation de tension transistor C8 renco
Text: MISE EN ŒUVRE APPLICATIONS C onvertisseur à transistor de puissance intégré supportant 1 A. D5SCAM 1 R 3,3 nF 1,5 Q 82 pF 12. D 10 11 12 13 R 13 14 15 2,2 kil 16 SI9117 470 Q g NC •s e n s e V+ v cc V- SD V ref SYNC NI c csc FB R os c COMP ss 10 p1*
|
OCR Scan
|
PDF
|
SI9117
fil-13
Si9117.
photocoupleur
schema d un transistor en
Convertisseur Tension Frequence
MODULATION DE PHASE
equivalente
frequence
diodes de regulation de tension
transistor C8
renco
|
airbag control unit
Abstract: gc352
Text: STH60N10 STH60N10FI SGS-THOMSON RÆOOi@[llL[l SÏB ÎMD©i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 60N 10 S TH 60N 10FI V d ss R DS(on Id 100 V 100 V 0.025 Ü 0.025 a 60 A 36 A . . • . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED
|
OCR Scan
|
PDF
|
STH60N10
STH60N10FI
O-218
ISOWATT218
STH60N1
airbag control unit
gc352
|
STV40N10
Abstract: D073
Text: i w S G S -T H O M S O N iH iC Tœ m ei S T V 4 0 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STV40N10 • . . . . . . . Vd ss 100 V RDS on < 0.04 a Id 40 A TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
|
OCR Scan
|
PDF
|
STV40N10
STV40N10
7TSTS37
0068039-C
DQ73A7b
D073
|
2N1724
Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
Text: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15
|
OCR Scan
|
PDF
|
0-300V
2N1724
2N1724A
2N1725
2N2811
2N2812
2N6590
2N6689
2N6690
2N6691
2N1724
2N1724A
2N1725
2N2811
2N2812
2N2813
2N2814
2N3487
2N3488
2N3489
|
MTP8N45
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R D I• b3b?as4 aoâibîB a ime F I T-ÌÌ-I3 MOTOROLA ■ I SEM ICO NDUCTO R TECHNICAL DATA IRF340 Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF340 V d SS 400 V rDS on >D 0.55 n 10 A This TM O S Power FET is designed for high voltage, high speed
|
OCR Scan
|
PDF
|
IRF340
MTP8N45
|
Untitled
Abstract: No abstract text available
Text: SM68CE256, SMJ68CE256 32,768 WORD BY 8-BIT STATIC RAMS J U L Y 1 9 8 7 - R E V IS E D N O V E M B E R 1987 • 32,768 x 8 Organization • Common I/O • Military Temperature Range . . . - 5 5 ° C to 125°C IM Suffix JD PACKAG E A14C 26 □ A 1 3 25 □ A 8
|
OCR Scan
|
PDF
|
SM68CE256,
SMJ68CE256
|
Q62702-S654
Abstract: No abstract text available
Text: SIEMENS BSP 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • V GS th = 1 . 5 . . . 2 . 5 V Type Vos h BSP 125 600 V 0.12 A Type BSP 125 BSP 125 Ordering Code Q62702-S654 Q67000-S284 ffDS(on) 45 Q Package Marking SOT-223 BSP 125
|
OCR Scan
|
PDF
|
OT-223
Q62702-S654
Q67000-S284
E6327
E6433
OT-223
|
B550 transistor
Abstract: SFH606
Text: SIEMENS AKTIEN6ESELLSCHAF 47E J> • SIEM ENS fl23Sb05 0 0 2 7 2 fl « S I E G SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR FEATURES DESCRIPTION * Isolation Test Voltage: 5300 V * High Current Transfer Ratios at 10 mA: 63-125% at 1 mA: >22%
|
OCR Scan
|
PDF
|
fl23Sb05
SFH606
B550 transistor
SFH606
|
VQE 22 led
Abstract: transistor sec 623 transistor sec 621 MOCD208 transistor D207
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD207 MOCD208 [CTR « 100-200%] Transistor Output [CTR = 40-125%] These devices consist of two gallium arsenide Infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface
|
OCR Scan
|
PDF
|
RS481A
CD207
MOCD208
VQE 22 led
transistor sec 623
transistor sec 621
MOCD208
transistor D207
|
