TRANSISTOR* TF 60 Search Results

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

Contextual Info: TO SHIBA 2SC5355 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC 5355 SWITCHING REGULATOR APPLICATIONS HIGH VO LTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tf = 0.5 /us Max. , tf = 0.3 /us (Max.)

TRANSISTOR C 3205

Abstract: 3205 transistor TRANSISTOR BR C 3205 transistor TD-100 ZTX576 DSA003769 3205 ic
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX576 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 -0.8 tr ts nS µS 500 5 Switching time VCE sat - (Volts) IC/IB=10 -0.6 -0.4 -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 tf nS 1000 ts C B 800 600 tf

2SA2071

Abstract: 2SC5824 T100 60V transistor npn 2a switching applications
Contextual Info: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.

NPN Transistor TO92 40V 200mA

Abstract: ZTX449 DSA0037665
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX449 ISSUE 2 – MARCH 1994 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 VCE=10V tf,tr,td ns 0.8 IC/IB=10 tf Switching time VCE sat - (Volts) 150 0.6 0.4

transistor 2sC3632

Abstract: 2SA1413-Z 2SC3632-Z 2SC3632 tc1665
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC3632-Z NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SC3632-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage VCEO = 600 V tf < 0.5 s • Complement to 2SA1413-Z 1 2 3

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR td tr 1.8 tf IB1=IB2=IC/10 ns 1.6 VCE=-10V 160 1.4 ts 140 ns 1.2 1200 120 1.0 1000 100 0.8 tr td 20 IC/IB=10 0.001 0.01 0.1 1 10 C ABSOLUTE MAXIMUM RATINGS. 40 200 E FZT649 FZT749 B IC/IB=100 0.2 C tf 60 600

2SD1409

Abstract: DARLINGTON 3A 100V npn
Contextual Info: 2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220F PARAMETER

2SD1409

Abstract: transistor 2sd1409
Contextual Info: 2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220F PARAMETER

2SC5876

Abstract: 2SA20 2SA2088 T106
Contextual Info: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 zExternal dimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

2SA2088

Abstract: 2SC5876 T106
Contextual Info: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

2SC5876

Abstract: 2SA2088 T106
Contextual Info: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

MJ10023

Abstract: application MJ10023 npn 20A power Diode 20A DARLINGTON 20A transistor IC 12A
Contextual Info: MJ10023 Silicon NPN Power Darlington Transistor GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. TO-3 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf

2SA2071

Abstract: 2SC5824 T100
Contextual Info: 2SA2071 Transistor Power transistor −60V, −3A 2SA2071 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −2A, IB = −0.2A) 3) Strong discharge power for inductive load and

2sc3632

Contextual Info: SILICON TRANSISTOR 2 S C 3 63 2-Z NPN SILICON EPITAXIAL TRANSISTOR M P -3 DESCRIPTION 2SC3632-Z is designed fo r High Voltage Switching, especially in Hybrid Integrated Circuits. PACKAGE DIMENSIONS in millimeters FEATURES • High Voltage V qeo = 600 V • High Speed tf < 0.5 ms

Contextual Info: AEC-Q101 Qualified Medium power transistor 60V, 0.5A 2SA2088FRA Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

FZT757

Abstract: FZT657 DSA003716
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT757 TYPICAL CHARACTERISTICS td tr ts tf µs µs 4 1.6 IC /IB=10 IB1=IB2=IC /10 200 3 V 150 100 1.2 0.01 0.1 0.6 1 ABSOLUTE MAXIMUM RATINGS. tr tf ts td tr 0.01 IC - Collector Current Amps 0.1 1 IC - Collector Current (Amps)

2SD1958

Abstract: 4227t
Contextual Info: Ordering number:EN2549A NPN Triple Diffused Planar Silicon Transistor 2SD1958 TV Horizontal Deflection Output High-Current Switching Applications Features Package Dimensions • Excellent tf permitting efficient drive with less internal dissipation. unit:mm

2SD1958

Contextual Info: Ordering number:EN2549A NPN Triple Diffused Planar Silicon Transistor 2SD1958 TV Horizontal Deflection Output High-Current Switching Applications Features Package Dimensions • Excellent tf permitting efficient drive with less internal dissipation. unit:mm

Contextual Info: N AMER PHILIPS/DISCRETE OLE D PowerMOS transistor • bb53T31 0014808 6 BUZ308 T- 3^-tf ‘ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

2SC5866

Abstract: 2SA2094
Contextual Info: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 !External dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)

2SC5866

Abstract: 2SA20 2SA2094
Contextual Info: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 zExternal dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)

Contextual Info: KSC1394 NPN EPITAXIAL SILICON TRANSISTOR TV VHF TUNER MIXER • High C urrent Gain Bandwidth Product fj= 7 0 0 M H z • High P ow er Gain G PE=20dB Min a tf= 2 0 0 M H z • Low Noise Figure N F=3.5dB (Max) a tf= 2 0 0 M H z ABSOLUTE MAXIMUM RATINGS (TA=25°C)

2SC5866

Contextual Info: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 !External dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)