TRANSISTOR BI 340
Abstract: 2sc2774
Text: , LJnc. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 2SA1170 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN 1.BASE 2.COLLECTOR V(BR)CEo= -200V(Min) • High Power Dissipation
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2SA1170
-200V
2SC2774
MT-200
-50mA;
-200V;
TRANSISTOR BI 340
2sc2774
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L9935
Abstract: XX111111
Text: L9935 TWO-PHASE STEPPER MOTOR DRIVER 2 X 1.1A FULL BRIDGE OUTPUTS INTEGRATED CHOPPING CURRENT REGULATION MINIMIZED POWER DISSIPATION DURING FLYBACK OUTPUT STAGES WITH CONTROLLED OUTPUT VOLTAGE SLOPES TO REDUCE ELECTROMAGNETIC RADIATION SHORT-CIRCUIT PROTECTION OF ALL
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L9935
PowerSO20
L9935
XX111111
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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Untitled
Abstract: No abstract text available
Text: L9935 Two-phase stepper motor driver Features • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation
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L9935
PowerSO20
L9935
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RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
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R07CS0003EJ0200
RJJ0319DSP
BCR8PM equivalent
RJP30H2
N0201
rjj0319
NP109N055PUJ
rjk5020
RJP30E2DPP
NP75N04YUG
lg washing machine circuit diagram
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Untitled
Abstract: No abstract text available
Text: L9935 Two-phase stepper motor driver Features • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation
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L9935
PowerSO20
L9935
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AN2378
Abstract: POWERSO20 L9935 L9935013TR
Text: L9935 Two-phase stepper motor driver Features • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation
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L9935
PowerSO20
L9935
AN2378
POWERSO20
L9935013TR
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l9935 spi
Abstract: m21 transistor
Text: L9935 Two-phase stepper motor driver Feature summary • 2 x 1.1A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation
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L9935
PowerSO-20
L9935
l9935 spi
m21 transistor
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m21 transistor
Abstract: MO-166 stepper motor 12v connection transistor hh 004 DC MOTOR SPEED CONTROL USING chopper flyback led driver with pwm dimming transistor hh 004 circuits diagram L9935 L9935013TR
Text: L9935 Two-phase stepper motor driver Feature summary • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation
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L9935
PowerSO-20
L9935
m21 transistor
MO-166
stepper motor 12v connection
transistor hh 004
DC MOTOR SPEED CONTROL USING chopper
flyback led driver with pwm dimming
transistor hh 004 circuits diagram
L9935013TR
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Untitled
Abstract: No abstract text available
Text: BFP 181W NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifier at 4 collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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VPS05605
OT-343
Oct-12-1999
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Untitled
Abstract: No abstract text available
Text: BFP181W NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifier at 4 collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFP181W
VPS05605
OT343
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transistor bI 340
Abstract: 2N3585
Text: 2N3585 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3585 is Designed for General Purpose High Voltage Amplifier and Switching Applications. PACKAGE STYLE TO - 66 2.0 A 300 V o m lc < MAXIMUM RATINGS INCHES Pd is s 35 W @ Tc # 25 °C Tj -65 °C to +200 °C
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2N3585
2N3585
RAD8-89
transistor bI 340
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Untitled
Abstract: No abstract text available
Text: n z z SGS-THOMSON li!iilD g[Si [llLi ¥MD(gi L9935 TWO-PHASE STEPPER MOTOR DRIVER PRODUCT PREVIEW • 2 X 1 .1 A FULL BRIDGE OUTPUTS ■ INTEGRATED CHOPPING CURRENT REGU LATION ■ MINIMIZED POWER DISSIPATION DURING FLYBACK ■ OUTPUT STAGES WITH CONTROLLED
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L9935
TYPICALLY20
POWERS020
L9935
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buv62
Abstract: No abstract text available
Text: 2 3 Ü 2 3 7 0 0 2 0 7 ^ 1 b • n ^ - 3 3 - I S SCS-THOMSON Ä 7# mm i l L iO T T I ^ Ù f f il lD O l r 7 z s c S G S-TH0MS0N B U V 6 2 30E » FAST SWITCHING POWER TRANSISTOR ■ FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND
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2N3584
Abstract: No abstract text available
Text: 2N3584 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3584 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE TO - 66 2.0 A 250 V o m lc < MAXIMUM RATINGS INCHES Pd is s 35 W @ Tc # 25 °C Tj -65 °C to +200 °C
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2N3584
2N3584
RAD8-89
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germanium transistor ac 128
Abstract: transistor ac 127 AC127 valvo ac128 valvo transistoren transistor ac 132 germanium transistor ac 132 transistor ac 128 ac 127
Text: N ICH T FÜR N E U E N T W IC K L U N G E N AC 127 GERMANIUM - NPN - NF - TRANSISTOR ftir Endstufen, in Verbindung mit AC 128 oder AC 132 als komplementäres Paar Mechanisehe Daten; Gehäuse: Metall, JEDEC TO-1, 1 A 3 DIN 41 871 Alle Elektroden sind vom Gehäuse isoliert*
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VX720043
germanium transistor ac 128
transistor ac 127
AC127
valvo
ac128
valvo transistoren
transistor ac 132
germanium transistor ac 132
transistor ac 128
ac 127
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TEA5704
Abstract: 38MHZ
Text: ¿ T T SGS-THOMSON TEA5704 * JM, KfflD ^ [l[L[i g^(Q [iO(gi ADVANCED 4-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR ADVANCE DATA PLAY-BACK MODE - LOW NOISE AND WIDE BAND AMPLIFIERS FOR 4 HEADS •AUTOMATIC OFFSET CANCELLATION BE TWEEN THE 2 SELECTED HEADS
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TEA5704
91DSTEA5704-03
91DSTEA5704-11
TEA5704
38MHZ
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m21 transistor
Abstract: FLAYBACK L9935
Text: SGS-TtiOMSON :ILI iriS3©K!lDgl L9935 TWO-PHASE STEPPER MOTOR DRIVER P R O D U C T P R E V IE W • 2 X 1 .1 A FULL BRIDGE OUTPUTS ■ INTEGRATED CHOPPING CURRENT REGU LATION ■ MINIMIZED POWER DISSIPATION DURING FLYBACK ■ OUTPUT STAGES WITH CONTROLLED
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L9935
TYPICALLY20
POWERS020
L9935
P0WERS02Q
m21 transistor
FLAYBACK
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AX117
Abstract: MAX113ENG
Text: >HylX IWI 19-1081; Rev 1;8 /96 +3V, 4 0 0 k s p s , 4/ 8- Ch annel , 8- Bi t A D C s w i t h 1 ¡jA P o w e r - D o w n _F e a t u r e s The MAX113/M AX117 are m icroprocessor-com patible, 8-bit, 4-channel and 8-channel ana lo g-to -d igita l c o n
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MAX113/M
AX117
MAX113ENG
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2N6678 motorola
Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
Text: "Tb MOTOROLA SC iXSTRS/R F> 6367254 M OT O R O L A SC CXSTRS/R F DE Jt.3t.72SM OOÛOSlt. 2 96D 60 516 D T-33-13 2IM6648 M O TO RO LA See Page S E M IC O N D U C T O R TECH N ICAL DATA 3-209 N P N Silico n Pow er T ransistors 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are
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T-33-13
2IM6648
2N6676
2N6677
2N6678
MJH6676
MJH6677
MJH6678
2N6676,
2N6677,
2N6678 motorola
Motorola 3-252
ca3725
Motorola Transistor 3-252
JH transistor
6676 transistor
Motorola 3-252 to-3
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AM503
Abstract: p63g
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16018* M JW 16018* D esigner’s Data Sheet N PN Silico n Pow er T ran sistors ‘Motorola Preftrrwl Dovie* 1.5 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in
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J16018*
UUR11
MJ16018
MJW16018
MUR105
AM503
P63G2
P6302
p63g
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Untitled
Abstract: No abstract text available
Text: b u r r - brown corp HE ] I 1? 313Li5 0014057 1 | T O H I-i \ XTR110 B U R R -B R O W N a 1 XTR110 [ APPLICATIO N S • 4mA TO 20mA TRANSMITTER • SELECTABLE INPUT/OUTPUT RANGES: OV to + 5 V , OV to + 1 0 V Inputs OmA to 20mA, 5mA to 25mA Outputs Other Ranges
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313Li5
XTR110
10-Iu
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BCW61RA
Abstract: bcx71 bcx71rh BCX71C BCW60
Text: ITT seuicond/ intermetall SGE D 4bô2711 D002bGQ 714 BCW61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. i i” n is 1 ! 4H P- Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,
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BCW61,
BCX71
BCW61
BCX71
BCW60
BCX70
BCW61R
BCX71R.
BCW61RA
bcx71rh
BCX71C
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19698 D Optoelectronic Specifications- T-V/-S3 HARRIS SEIUCOND SECTOR 37E J> m 4302271 0D271bD fl • HAS A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared E m itting D iodes & NPN Silicon P h o to-T ransistor
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0D271bD
H11AA1-H11AA4
H11AAI
S-42662
92CS-429S1
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