Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TP62601 Search Results

    TP62601 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TP62601 Advanced Semiconductor Transistor Original PDF
    TP62601 Motorola Microwave Power Oscillator Transistor Original PDF

    TP62601 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRW62601

    Abstract: 328A-03 BALLAST MOTOROLA Motorola 305 motorola rf Power Transistor RF TRANSISTOR 1 WATT TP62601
    Text: MOTOROLA Order this document by TP62601/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Oscillator Transistor TP62601 . . . designed for use as power oscillators at frequencies to 3.0 GHz with typical output power of over 1.0 watt. • Operation to 3.0 GHz


    Original
    PDF TP62601/D TP62601 TRW62601 TP62601/D* TRW62601 328A-03 BALLAST MOTOROLA Motorola 305 motorola rf Power Transistor RF TRANSISTOR 1 WATT TP62601

    TP62601

    Abstract: No abstract text available
    Text: TP62601 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI TP62601 is a Common Collector Device Designed for Applications up to 3.0 GHz Band. PACKAGE STYLE 230 2L FLG FEATURES INCLUDE: • Hermetic Package • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS


    Original
    PDF TP62601 TP62601

    Untitled

    Abstract: No abstract text available
    Text: TP62601 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI TP62601 is a Common Collector Device Designed for Applications up to 3.0 GHz Band. PACKAGE STYLE 500 4L FLG FEATURES INCLUDE: • Hermetic Package • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS


    Original
    PDF TP62601 TP62601

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original
    PDF ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA

    115AG

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP62601 The RF Line Microwave Power Oscillator Transistor MICROWAVE POWER OSCILLATOR TRANSISTOR . . . d e s ig n e d fo r u s e a s p o w e r o s c illa to rs at fr e q u e n c ie s to 3 G H z w ith ty p ic a l o u tp u t


    OCR Scan
    PDF TP62601 328F-01. GP-13) 115AG

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan
    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan
    PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    trw62601

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Power O scillator TVansistor . . . designed for use as power oscillators at frequencies to 3.0 GHz with typical output power of over 1.0 watt. • Operation to 3.0 GHz • High Output Power 1.2 W Typ @ 2.5 GHz


    OCR Scan
    PDF TRW62601 28A-03, GP-13) TP62601 trw62601

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan
    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan
    PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor