MTP15N05
Abstract: MTP15N06 TP15N05 P-15N 15N05 5N06 5N05
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M TP15N05 TP15N06 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is t o r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 15 AMPERES These TM O S Pow er FETs are designed fo r lo w vo ltag e , high
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TP15N05
MTP15N06
MTP15N05,
-220A
MTP15N05
MTP15N06
P-15N
15N05
5N06
5N05
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STP15
Abstract: No abstract text available
Text: S T P 15 N 0 5 L s t p i 5 N 0 5 LFI S G S -T H O M S O N ¡m e ra « ¿ 57 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V TP15N 05L S TP15N05LFI dss 50 V 50 V R DS on Id < 0.15 a < 0.15 a 15 A 10 A . TYPICAL RDs(on) = 0.115 Q . AVALANCHE RUGGED TECHNOLOGY
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STP15N
TP15N05LFI
05L/FI
ISQWATT220
STP15
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TP15N06V
Abstract: No abstract text available
Text: MOTOROLA Order this document by TP15N06V SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP15N06V TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This
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MTP15N06V
TP15N06V
21A-06
TP15N06V
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15N05L
Abstract: 15N05 MTP15N05L TP15N05L ne 06l MTM15N06L
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTM 15N05L MTM 15N06L M TP15N05L M TP15N06L Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto rs N-Channel Enhancement-Mode Silicon Gate TM OS T h e se Lo g ic Le vel T M O S P o w e r F E T s are d esig ned for high
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15N05L
15N06L
TP15N05L
TP15N06L
O-204AA
21A-04
O-220AB
15N05
MTP15N05L
ne 06l
MTM15N06L
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06LFI
Abstract: No abstract text available
Text: £ j 15 06 15 06 SGS-THOMSON ï ULKgraMOeS STP N L STP N LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP15N 06L TP15N 06LFI V dss RDS on Id 60 V 60 V < 0 .1 5 Q. < 0 .1 5 Q. 15 A 10 A . Q . . TYPICAL RDs(on) = 0.115 AVALANCHE RUGGED TECHNOLOGY
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TP15N
STP15N
06LFI
06LFI
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Untitled
Abstract: No abstract text available
Text: 772cì537 004b3S0 *ïfll • SGTH 15 06 15 06 SGS-THOMSON H O T «! STP N L STP N LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP15N 06L TP15N 06LFI 60 V 60 V R d S oii < 0.15 < 0.15 n n Id 15 A 10 A . TYPICAL RDS(on) = 0.115 Q
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004b3S0
TP15N
STP15N
06LFI
STP15N06L/FI
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by TP15N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP15N 06VL TMOS V™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This
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MTP15N06VL/D
TP15N
21A-06
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TP15N06
Abstract: P15N06V TP15N06V 15N06VL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TP15N06VL TMOS V Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a chie ve an o n -re s is ta n ce a rea prod u ct a bo u t o n e -h a lf th a t ot sta n d a rd M O S FE Ts. This
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P50N05
Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2
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BUZ11
BUZ11A
BUZ20
BUZ21
BUZ71
BUZ71A
TP50N06E
MTP50M
P50N05
P50N06
P50N05
p50n06
TP3055EL
tp50n05e
MTP36N06E
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MTP8N10
Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1
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O-218
O-22QAB
MTM2P50
204AA
MTP2P50
220AB
MTM2P45
MTP2P45
MTP8N10
mtp7n06
mtp12n10
MTP7N15
power mosfets to 204aa
MTP5N15
mtp25n10
MTP12P08
MTP3N15
MTH8P20
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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TER22
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-222 R7 AHA 1/12/04 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency
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SS-222
TER22
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tdr22
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-222 R5 AHA 6/30/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency
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SS-222
tdr22
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TDR15
Abstract: TD18N TD68N TP82N TP68N
Text: MHL multilayer ceramic inductor features inductors • Monolithic structure provides high reliability in a wide temperature and humidity range • High quality ceramic material and unique manufacturing process provides high Q at high frequency • Standard EIA packages: 1E, 1J, 2A
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Untitled
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-203 R4 AHA 02/05/04 Thin Film Chip Inductors Type KL73 0402 CERTIFIED 1. Scope This specification applies to Thin Film Chip Inductors KL73 1E size produced by KOA Corporation. 2. Type Designation The type designation shall be the following form:
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SS-203
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KL731H
Abstract: TP33N KL731E
Text: KL73 thin film inductor features Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating
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MIL-STD-202,
KL731H
TP33N
KL731E
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Untitled
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-222 R9 AHA 2/09/05 Multilayer Ceramic Inductors Type MHL CERTIFIED CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency
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SS-222
Dimensions039
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F böE D • b3b?254 QQTfiTS? 6b3 ■ MOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA TP15N05EL Designer's Data Sheet M otorola Preferred Device Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Vi This Logic Level TM OS Power FET is designed for high
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MTP15N05EL
RuggedO-220AB)
Y145M
221D-02
O-220
Y145M,
314B03
O-220)
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Untitled
Abstract: No abstract text available
Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B
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MIL-STD-202,
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PDF
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Untitled
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-222 R6 AHA 9/29/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency
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Original
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SS-222
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PDF
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Untitled
Abstract: No abstract text available
Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B
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MIL-STD-202,
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
TP8N10
th15n20
TH7N50
TP4N10
TP10N05
IRFP350FI
TP5N35
tp5n40
TP4N45
TP3N40
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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